S 100 B2 Search Results

Contextual Info: LfcD Lamps D IO D E Ô21 Ü G H T C M n T iN G «SLS SILICON SENSORS, INC. 1 S IR D S IR D S IR D S IR D S IR D 3 4 5 6 Vu, V 6 6 6 6 6 6 t o o 100 100 100 100 100 60 40 40 100 100 7 3 IR D a S IR D 9 10 =I S D S IR D i l 6 I i (mWl ; ! ! i 4 4 5 5 - i 170

map 3204

Abstract: ALLAYER COMMUNICATIONS 802.1q trunk AL1022 AL121 AL3000 AL300A PBD25 "address learning" disable 802.3 802.1d port PBD26
Contextual Info: AL121 Revision 1.0 8 Port 10/100 Mbit/s Dual Speed Fast Ethernet Switch • • • • • • • Supports seven 10/100 Mbit/s Ethernet ports with RMII and one 10/100 Mbit/s Ethernet port with MII/RMII interface Capable of trunking up to 800 Mbit/s link

AL125

Abstract: ALLAYER COMMUNICATIONS RID25 bit 3193 RID15 ETD10 RID19 PBD22 2 port 10/100 ethernet transceiver RMII "Preamble signal"
Contextual Info: AL124 Revision 1.1 8 Port 10/100 Mbit/s Dual Speed Fast Ethernet Switch • • • • • • • Supports seven 10/100 Mbit/s Ethernet ports with RMII and one 10/100 Mbit/s Ethernet port with MII/RMII interface Capable of trunking up to 800 Mbit/s link

"address learning" disable 802.3 802.1d port

Abstract: ALLAYER COMMUNICATIONS map 3204 AL1022 AL125 AL3000 AL300A PBD24 ETD15 al126
Contextual Info: AL125 Revision 1.0 8 Port 10/100 Mbit/s Dual Speed Fast Ethernet Switch • • • • • • • • Supports seven 10/100 Mbit/s Ethernet ports with RMII and one 10/100 Mbit/s Ethernet port with MII/RMII interface Capable of trunking up to 800 Mbit/s link

DP83815

Contextual Info: DP83815 DP83815 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer MacPhyter Literature Number: SNLS059E DP83815 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer (MacPhyter ) DP83815 is a single-chip 10/100 Mb/s Ethernet Controller

SF5D14

Abstract: SF10D41 SF5D42 SF5J13 SF5J42 SF10GZ47 SF8D41 SF8J41 SF5B42 SF5D13
Contextual Info: - 18 - * 5È di/dt 121 It s m 1 50Hz) t=2-10ms Tj Vd (A) (A2 S) (V) (V//< s) (°C) 80 32. 00 60 18. 00 90 40. 00 80 32. 00 100 80 32. 00 100 au 32. 00 60 18. 00 60 18. 00 90 40. 00 80 32. 00 100 80 32. 00 100 oo nn 80 L. \jyj 80 100 1/2VDRM 32. 00 60 18. 00

Contextual Info: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SO B2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as

Contextual Info: STB50NE10 N - CHANNEL 100V - 0.021Î2 - 50A - D2PAK STripFET POWER MOSFET TYPE S T B 50 N E 1 0 V dss 100 V R D S o n Id < 0 .0 2 7 Q. 50 A . . . . . TYPICAL R D S (o n ) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

EAM INTERFACE 105

Abstract: OT25 M10CRS EAM06
Contextual Info: TNETX3150/TN ETX3150A ThunderSWITCH 15-PORT10-/100-MBIT/S ETHERNET™ SWITCH S P W S 0 2 7 F -FEBRUARY 1997 -R E V IS E D SEPTEMBER 1997 Highly Integrated Single-Chip Shared-Memory Switch Provides 12 10-Mbit/s Ethernet Ports, 2 10-/100-Mbit/s Ethernet Ports, and a

Contextual Info: Series SMC Straight Plug, crimp Stecker, crimp Part Number Cable Group Assembly Instruction MIL-Std.- Crimp-Inserts C39012 39 S 102-101 E3 01 59 G2 74-0008 11 W 150-402 - 100 39 S 102-102 E3 02 59 G2 74-0009 11 W 150-402 - 100 59 G2 _ 11 W 150-402 _ 100 39 S 102-103 E3

hshm-hxxxxx-5xpx-xxxxx

Contextual Info: 3M MetPak HSHM Press-Fit Header 2 mm Type B25, 125 Signal Contacts, 5 Rows, Straight S S S S S S S HSHM Series Up to 5 Gb/s data rates Low crosstalk at high frequencies 50/100 Ω single-ended /differential impedance Modular/scalable format IEC 61076-4-101

GCS9030

Abstract: STD8N10L 066AA 100VDS
Contextual Info: rz Z ^ 7/ S C S -T H O M S O N IKJDra IILIOT©raDSl STD8 N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss STD8N10L 100 V RDS on < 0.33 Id n % 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

132/DD 127 D TRANSISTOR

Contextual Info: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

creative sound blaster 5.1 circuit diagram

Abstract: 24C02 w6 OPL2 RWA032
Contextual Info: 41^ R o c k w e l l S em iconductor S ystem s WaveArtist 100, WaveArtist™ 200, and WaveArtist™ 300 Audio System Devices _ Introduction Features The Rockwell WaveArtist™ 100 RWA100 , WaveArtist™ 200 (RWA200) and WaveArtist™ 300 (RWA300) are

Contextual Info: DP83815 DP83815 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer MacPhyter Literature Number: SNLS059E DP83815 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer (MacPhyter ) General Description

74f04 texas instruments

Contextual Info: DP83850C DP83850C 100Mb/s TX/T4 Repeater Interface Controller 100RIC Literature Number: SNLS028A DP83850C 100 Mb/s TX/T4 Repeater Interface Controller (100RIC ) General Description Features ol e te The DP83850C 100 Mb/s TX/T4 Repeater Interface Con- • IEEE 802.3u repeater and management compatible

Contextual Info: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: ¿7/ STB30N10 N - CHANNEL 100V - 0.06Î2 - 30A - D2PAK POWER MOS TRANSISTOR TYPE V STB30N10 d ss 100 V R d S o ii < 0 .0 7 a Id 30 A TYPICAL R D S (on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

993 395 pnp npn

Abstract: P411040-1 P611080-1 CRB1BW10 XC26 CRB2 CRB1BW50 CDRB2BWU10 XA38 CRB1LW50
Contextual Info: Rotary Actuator Vane Style Series CRB1 Size: 50, 63, 80, 100 Series Variations CRB2 Air 100 CRB1 D MSU Axial ported Side ported Side ported S Axial ported D Side ported Side ported S Axial ported D Axial ported Side ported S Axial ported D Side ported Port location

Contextual Info: January 1997 Revision 3.0 DATA S H E E T - SDC4UV7282 A -(67/84/100/125) T-S 32MByte (4M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC4UV7282(A)-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized

Contextual Info: Preliminary Data Sheet September 1997 m i cro e le ctr o n ic s group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port

Contextual Info: cP IITSU May 1997 Revision 1.2 data sheet SDC16UV7284- 67/84/100/125 T-S 128MByte (16Mx 72) CMOS Synchronous DRAM Module General Description The S D C 16U V 7284-(67/84/100/125)T-S is a high performance, 128-m egabtye synchronous, dynamic RAM module organized

Contextual Info: cP IITSU May 1997 Revision 1.2 data sheet SDC16UV7284- 67/84/100/125 T-S 128MByte (16Mx72) CMOS Synchronous DRAM Module General Description The S D C 16U V 7284-(67/84/100/125)T-S is a high performance, 128-m egabtye synchronous, dynamic RAM module organized

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Q - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE V STD 20N 03L d s s 30 V R d Id S o ii < 0.02 Q. 20 A (*) . . . . . . . . TYPICAL RDs(on) = 0.22 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C