S 122 TRANSISTOR Search Results

Contextual Info: N AUER P H I L I P S / D I S C R E T E m bt.S3T31 Q O O T S H S 4 H fl?D D ^ 2 f ]-Q ~ LSD TRANSISTORS ip fn H ; Vj t p ' Vs t- J* fA * ' ^ NF (dB) Outline Drawing 3 2.5 — TO-122 TO-122 TO-122 TO-122 TO-122 TO-122 (MHz) eb (PP) Outline Drawing 200 200

TIC 122 Transistor

Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Contextual Info: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

BFS17

Abstract: BFS17W
Contextual Info: • bb53^31 0a252bb 122 ■ APX P h ilip s S e m icon d u inary sp ecification NPN 1 GHz wideband transistor BFS17W N AUER PHILIPS/ DIS CRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic

JD127

Abstract: MJ012 6AI diode mj01
Contextual Info: rz S 7 “ 7# G S - T H O M S O M JD 122 M JD 127 N 6ai»igS lLlliSTI*§iMBeS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS < INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK

fr91a

Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72

IP122

Abstract: transistor darlington TIP-120 tip122c TIP120
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122

Contextual Info: BS870 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)

Contextual Info: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)

Contextual Info: BS850 DMOS Transistors P-Channel D G SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)

Contextual Info: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V

TIP 122 transistor

Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60

02n60

Abstract: JD127
Contextual Info: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.

TDA 5331

Abstract: tda 2222 t06 sot 23 TDA 7283 capacitor 224 BLV33 0049543 SOT147
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D m bbSBIBl QDBñTñS 122 BLV33 IAPX V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear v .h .f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich

CNY 17-2 optocoupler

Abstract: GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2
Contextual Info: SIEMENS CMPN TS t OPTO MME 1 • fl23b32b 0004177 S BI SI EX SIEM EN S CNY17 SER IES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER - H l- 2 3 Pa cka ge D im e nsions in In ch es mm xrniti ■343(17) .*»(»«) .1 #(3J) .130(33) 1 T~ r \ " o- rSS .122(3.1) 3

IRFD121

Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Contextual Info: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

diode sy 710

Abstract: sy 710 diode FN121 ufn120 V01T
Contextual Info: POWER MOSFET TRANSISTORS UFN120 100 Volt, 0.3 Ohm N-Channel 122 U F N 123 UFN FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • N o Second Breakdown • Excellent T em perature Stability D ESCRIPT IO N The Unitrode power M O S F E T design utilizes the m ost advanced technology available.

DIODE ITT 310

Abstract: OC70P2 transistor 1p3
Contextual Info: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,

transistor s0014

Abstract: S0014
Contextual Info: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong

Contextual Info: [ s O OPTOELECTRONICS I— PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES ? D EÌ ? + ►j T£4- : 3 15- r 103 :2 6 NCM 122 2 l 0 1 1 t 28-J 17 A p ertu re Test M ax W id th C o n d itio n s ’ c (ONI (m A b v ceo W id th (V) R a tin g Num ber (m m ) L E D /S en so r

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

LM322N

Abstract: transistor t128 LM2905 LM3905 Dearborn Electronics 28V relay LIMING relay H10C LM122 LM122H
Contextual Info: LM122/LM322/ LM3905 N a t i o n a l S e m i c o n d u c t o r LM 122/LM322/LM3905 Precision Timers General Description The LM122 series are precision timers that offer great ver­ satility with high accuracy. They operate with unregulated supplies from 4.5V to 40V while maintaining constant timing

BC 148 transistor

Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Contextual Info: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

MC1112

Abstract: LTED MD1122 MD11 MD1120 MD1120F MD1121 MD1127 MQ1120
Contextual Info: MDI 120, MDI 120F SILICON MDI121 MDI 122 MQ1120 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed fo r use as d iffe r e n tia l a m p lifie rs , dua l general-purpose a m p lifie rs, f r o n t end d e te c to rs and te m p e ra tu re com pensa tion