S 13003 Search Results

transistor LB 13003 C

Abstract: t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR
Contextual Info: S G S -T H O M S O N E fi M lF3m i g ? [ M 0igS S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:

transistor 13003 AD

Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
Contextual Info: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:

VL65C22-02PC

Abstract: VL65C22 VL65C22V-02QC VL6522 VL65C22-02QC DD0127 right left shift register VL6522-01PC DDD127
Contextual Info: V L S I VLSI TECHNOLOGY IN C D Ë J '=1300347 ODGiabö S | T 5 2 33 15 - - - T ech n o lo g y , in c . VL6522 • VL65C22 • VL65C22V PARALLEL INTERFACE/TIMER FE A TU R E S D E S C R IP TIO N • Low power consuming CMOS parallel interface/timer -VL65C22 has active pull-ups on

Contextual Info: DIAMOND Fiber Optic Components ST CONNECTOR H S T -S 0 .66 H S T -M 0 .6 6 SM MM Specifications: S in g le m ode Insertion loss IL * typ0.2 Return loss (RL) Repeatability of IL Service life M u ltim o d e max 0.4 typ 0.15 max 0.5 U nits T e s t c o n d itio n s

cai3

Contextual Info: •'IP radiali! TECHNICAL DATA SHEET Fibre Optic Components T itle F 715 051 000 STAN D A RD S I N G L I EMODE P L U G H O U S IN G F O R A ' F T Z 1 CAI3 L E <t>3.5mm D im e n s io n s S e rie s EC Page 1/1 56 MAXI* 8.20 MAXI mm Issu e : 04 1 9 96 x < s * Dimension Indicated

AWM 20626

Abstract: Beau Barrier Strips diagram of high frequency pvc welding machine 805001A09M040 884030K05M050 dc plug 7.4mm 5.08mm BNY801P-FBC 884030K05M030 p130a DN5100-M005
Contextual Info: Industrial Products Power Products Typical Terminal Quick

me 13003

Abstract: ar 13003 HN62412P TU F 13003
Contextual Info: H I T A C H I / L O G I C / A R R A Y S / M E M DM DËJ 0013003 0 04E 13003 4496203 HITACHI/ L OG IC / A R R A Y S/ M E M HN62412P- -P V Ó -/ J -/ 3 " 131072-word x 16-bit/262144-word x 8-bit CM O S Mask Programmable Read Only Memory The HN62412P is a 2-Mbit CMOS mask-programmable ROM

TU F 13003

Abstract: S13003 s13002 transistors 13003 SI 13003 13003 TO-126 13003T 13003 TO 126 S13003T transistors SG 13003
Contextual Info: 7^537 005^153 3 • SGS-THOMSON IILIOT «! S G S-TH0MS0N SGS13002/13003 SGS13002T/13003T 3DE » HIGH VOLTAGE SWITCHING APPLICATIONS DESC RIPTIO N The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

13003T

Abstract: SI 13003 SH 13003 B834 TR 13003 A 13003ts 13003 TO 126 transistors 13003 SGS13003 g 13003
Contextual Info: 7 ^ 5 3 7 005^153 SGS-THOMSON IILIOT «! S G S-TH0MS0N 3 • SGS13002/13003 SGS13002T/13003T 3D E » HIGH VOLTAGE SWITCHING APPLICATIONS DESC RIPTIO N The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

IEC 874-1

Contextual Info: f a RADIALi! llP fc itm lH TECHNICAL DATA SHEET F ib r e O p tic Components T itle F 715 010 703 STAN D A RD S I N G L EMODE P L U G H O U S IN G + O P T I C A L F E R R J L E D I A 1 2 5 + [a m D im e n s io n s mm S e rie s EC Page 1/1 56 MAXI* 8.20 MAXI

Contextual Info: f a RADIALi! llP fc itm lH TECHNICAL DATA SHEET F ib r e O p tic Components F 715 010 706 T itle STAN D A RD S I N G L EMODE P L U G H O U S IN G + O P T I C A L F E R R J L E D I A 1 2 6 [a m 8.20 MAXI mm D im e n s io n s S e rie s Issu e : EC 06 1 3 96

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

PT6045

Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

Contextual Info: s p p p :•u e GOOGrT'cn FILM TRIM P LA S TIC D IELEC TR IC C APACITORS S G -402G 10 m m TOP & BO TTO M / S ID E A D JU ST Voltage Rating: High Temperature PTFE — 200 WVDC, all others — 100 W VDC Dielectric Withstanding Voltage: High Temperature PTFE —

SD13003

Contextual Info: EN G IN EER IN G NO. 130039 "sj 00 9 10 M A T E R IA L NO. D ESC RIPTIO N 1300390385 DND150 F E M A L E S T A N D A R D T E R M IN A T O R WITH R E S IS T O R 1 300390386 DND151 F E M A L E T E R M IN A T O R WITH JU M PE RS NO TES: 1. M A T E R IA L : S E E T A B L E

X 13003

Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
Contextual Info: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

IEC 874-1 method 6 for fibre optic

Contextual Info: r a d ia li : Fibre Optic Components F 715 059 000 TECHNICAL DATA SHEET Title S T A N D A R D S I N G L E M O D E P LU G H O U S I N G for a co ated fibe r D IA 250 -m with a tube DIA 0 .5 / 1. 1 or 0. 6/1 mm D i m e n s io ns mm S eri es EC Issue : 04 19 96

S JE 13003

Abstract: 13003 h 6d SE 13003 13003 sd JE 13003
Contextual Info: NOT E S L MATERIALS: SHI ELD — D E E P DRAW S T E E L . HO U S I N G CONTACTS — COPPER ALLOY. M I C R O C R O S S GROU N D — C O P P E R 3 1.50 1.240 24 .1 3 R E F . DIM." B" E . C . ' .950 TAIL DIM ." A" P . C . TAIL LENGTH 2. R U A T I N G : SEE 3. P R O D U C T

Contextual Info: S e c tio n A - B 5:1 zx m * 5{/ / / ' M 0 ,3 5 o. I . 1 | o.i @|c I m +0'05 S ï Œ 4S S Œ s EE View 5:1 1=1 °-2 Ie I— = FIRST ftNGLE PROJECTION □RWG View W INCH METRIC 5:1 C j SIGN Ca D REVISE ONLY ON CAD SYSTEM | sh. |rev. CADCAM PROJECT NAME I

Contextual Info: DIAMOND Fiber Optic Components Specifications: S in g le mode In s e rtio n loss IL ty p 0 .2 m a x 0.4 dB IEC 1300-3-4; A,= 13Q0/1550nm m in 40 m in 7 0 * dB IEC 1300-3-6; X = 1300/1550nm m a x ±0.1 m a x ±0.1 m a x ±0.1 dB O ver s e rv ic e life S e rvice life

VT20C68-20

Abstract: VT20C68-35 VT20C68 J 6920 A VT20C
Contextual Info: V L S I 1ÔE 1> TECHNO LOG Y INC V L S I Te c h n o l o g y • =1300347 □DG3D37 7 ■ T-Hb-Z3 - / 2. in c . VT20C68 • VT20C69 4,096 x 4 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 2 0 ,2 5 , and 35 ns The VT20C68 and VT20C69 are high-speed static RAMs SRAMs

S-13XX

Abstract: CQ 521 U/25/20/TN26/15/850/DIODE CQ 521
Contextual Info: S H E E T 2 OF 2 □RAWING No.:- P1 3-X X 21 IF IN DOUBT - ASI PROBE HEAD VARIANTS c NOT TO S C A L E 0G.-+8- r< 00 ,; A L L D IM ENSIO NS IN mm NOTES: 1, TO BE USEE WITH S L E E V E S S13-XX1, 2, MINIMUM CENTRES = 1,27mm, 3, M ATERIALS AND FINISH! PLUNGER = HEAT TREATEE BERYLLIUM COPPER,

i8237A

Abstract: i8237 i8259a 68C45 Z80 CRT controller micron cmos 1988 interface 8254 with 8086 8086 structure block diagram of 8086 and 8088 M85C30
Contextual Info: V L S I TECHNOLOGY INC IflE D H P V L S I T ech n o lo gy, inc. • T3flfl347 0D0324L. S ■ t- ^ VMC10 AND VMC100 SERIES 2-MICRON AND 1.5 MICRON ADVANCED CMOS MEGACELL FAMILY FEATURES FAMILY DESCRIPTION ASIC COMPATIBLE • Library of m icroprocessor peripheral functions

transistor t6055

Abstract: C6052P T6055 VGT300077 NAND Micron PT6001 KT 829 PC6D00
Contextual Info: V L S I TECHNOLOGY INC 1ÍE I 13afl3M7 D0G3SÖ4 S V L S I T echnology , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION ADVANCED DESIGN TOOLS • Advanced 1.0 m icron drawn) silicon gate technology The VGT300 Series of high-performance gate arrays is fabricated on an