S 178 A INTEGRATED CIRCUIT Search Results

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿P D 42 S 178 0 5 L , 4 2 178 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO D escription The ¿/PD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: <D<D 0.60 - - 1—0 S e a ting P lane 1q - .i._ 0.20 0.08 1o . i o | c [ Drawing #: MDP0038 Rev: D D ate: 2 / 2 2 / 9 9 U nits: m m JEDEC Reg: MO-178 i J PACKAGE OUTLINE DRAWING 5 LEAD S O T -2 3 PACKAGE eiantec HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS

PD42S17805

Abstract: 4217805
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /ZPD 4 2 S 1 7 8 0 5 ,4 2 178 0 5 16M -B IT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description T h e ¿¿PD42S17805, 4 2 1 7 8 0 5 a re 2 ,0 9 7 ,1 5 2 w o rd s b y 8 b its C M O S d y n a m ic R A M s w ith o p tio n a l E D O ,

PT78 series

Abstract: SLTA012 Product Selector Guide 04Amp
Contextual Info: PT78NR100 Series 1 Amp Plus to Minus Voltage Integrated Switching Regulator SLTS058B Revised 8/31/2000 • • • • • • Negative output from positive input Wide Input Range Self-Contained Inductor Short Circuit Protection Over-Temperature Protection

MSA-1000-GP4

Abstract: MSA-1000-GP6
Contextual Info: m HEW LETT PACKARD MSA-1000 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features Chip Outline1 • High Output Power: +27 dBm typical P1dB at 1.0 GHz • Low Distortion: 37 dBm typical IP3 at 1.0 GHz • 8.5 dB typical Gain at 1.0 GHz

Contextual Info: HEWLETT-PACKARD/ CflPNTS WLTM HEWLETT wSHM PACKARD blE » • 44M7584 DDlQ13b 607 « H P A MSA-1000 Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers MODAMP Features Chip Outline 1 • High Output Power: +27 dBm typical P1 jb at

Contextual Info: Q a v a n te k MSA-0635 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • Cascadable 50 Q Gain Block • • • Low Operating Voltage 3.5 V typical Vd 3 dB Bandwidth: DC to 0.9 GHz

Contextual Info: Q a v a n te k MSA-0385 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 85 Plastic Package Features • • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.5 GHz 12.0 dB typical Gain at 1.0 GHz

LD 8105

Abstract: mag 124
Contextual Info: HEW LETT PA C K AR D MSA-0385 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 85 Plastic Package • • Cascadable 50 ii Gain Block 3 dB Bandwidth: DC to 2.5 GHz • 12.0 dB typical Gain at 1.0 GHz • 10.0 dBm typical Pi dB at 1.0 GHz

TCC-50-2

Abstract: PL130C-F2 pl130c-f3 GR-1503-CORE Trompeter CBJE130-1 pcb MOUNT F JACK CONNECTOR GR-1503 PL130C-F1 Trompeter Electronics
Contextual Info: TROMPETER CARRIER CLASS HIGH FREQUENCY “F” CONNECTORS PRINTED CIRCUIT BOARD EDGE MOUNT “F” CONNECTORS Trompeter offers a wide range of F connector series products, including a new edge-mount circuit board F-connector, the CBJE130. The unique design of this new connector features a

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

Contextual Info: LINEAR INTEGRATED CIRCUIT KA2223 5-BAND GRAPHIC EQUALIZER AMPLIFIER The KA2223 is a m o n o lith ic integrated c irc u it c o n s is tin g of an operational am p lifier with five resonant c irc u its and a active filter, and it is su ita b le fo r rad io-cassette tape recorders, ca r ste re o s

TC40H273P

Abstract: S 178 A INTEGRATED CIRCUIT IC 74LS273
Contextual Info: TO SHIBA INTEGRATED CIRCUIT TECHNICAL DATA T P d . n M I U “ TC40H273 9 7 ' l P / F I U l / I C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC U l l f c OCTAL D-TYPE FLIP-FLOP The TC40H273 is octal D-type flip-flop having common CLOCK terminal and CLEAR terminal.

ka22426

Abstract: ka22426d FM radio CIRcuit DIAGRAM
Contextual Info: KA22426 PRELIMINARY LINEAR INTEGRATED CIRCUIT AM/FM ONE-CHIP RADIO The KA22426 is a m o n o lith ic in te g ra te d c irc u it d e s ig n e d fo r ra d io ­ c a s s e tte ta p e re co rd e rs , c lo c k ra d io s a n d h e a d p h o n e radio s. FUNCTIONS

Contextual Info: APS00B DESCRIPTION Honeywell’s APS00B High Resolution Magnetic Angular Position Sensor IC Integrated Circuit is a miniature surface mount device for angular or rotary displacement designed for magnetic saturating field sensing. The APS00B creates an analog output voltage that varies with

Contextual Info: I I N AUER PHILIPS/DISCRETE b'lE D btSa'IBI 0D32757 *150 APX OM390 OM391 J HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proxim ity detectors in tubular construction, especially the M18 hollow stud. The 0M390 is fo r positive supply voltage and the OM391 is for negative supply

OM350

Abstract: CI 7407 HYBRID V.H.F./U.H.F. AMPLIFIER
Contextual Info: OM350 _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for RATV and M ATV applications. QUICK REFERENCE DATA = Frequency range vB f

a2240

Abstract: quadrature detector KA2240 SAMSUNG FM Tuner fm if system SAMSUNG receiver am fm
Contextual Info: KA2240 LINEAR INTEGRATED CIRCUIT FM IF SYSTEM WITH QUADRATURE DETECTOR The KA2240 is-a FM IF system with quadrature detector for use in Hi-Fi FM stereo tuner and car receiver. 16 DIP Unit: mm FEATURE • Exceptional Limiting Sensitivity : 26dBMVtyp, -3dB point

OM350

Contextual Info: OM350 _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for RATV and M ATV applications. QUICK REFERENCE DATA = Frequency range vB f

philips om350

Abstract: OM350
Contextual Info: ^ 5 3 ^ 3 1 DD3243E fl3fl H A P X OM350 _ N AMER PHILIPS/DISCRETE bRE ]> HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for RATV and MATV applications.

OM350

Abstract: wideband amplifier
Contextual Info: OM350 J \ _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for R A T V and M A T V applications. Q U IC K R E F E R E N C E D A T A vB

M71D6

Contextual Info: OM390 OM391 PHILIPS INTERNATIONAL SbE D • 711DÔ2L. GG47104 3ÔT « P H I N éÓ ~05 HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended fo r inductive p ro xim ity detectors in tubular construction, especially

Contextual Info: m H EW LETT PACKARD MSA-0370 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 70 mil Package Features • • • • • • .040 1.02 Cascadable 50 n Gain Block 3 dB Bandwidth: DC to 2.8 GHz 12.0 dB typical Gain at 1.0 GHz