S 20 G Search Results

0P-90G

Abstract: OP-90 OP90E
Contextual Info: - 68 - O P -90 iS ififJK , n —; W -, ANALOG D EVICES •m 6~36V, + 0 . 8 ~ ± 1 8 V % m & QP-90G tt V s= ± 15V #GND • 6 A i * 7 A X M S QF-90E ± 18 ±18 V 20 - V s - 2 0 - —+ V s+ 20 - V s - 2 0 '" - + V s +20 V - V s - 2 0 — + V s+ 20 - V s-20~ + V s+ 20

Contextual Info: Alle Bechle mrbthalltn/ 5 i l l rights resenet 1 3 D C Ansc h I u s s s e i te st i Ansc h I u s s s e i te ( bu) S c h i rm — Sc h i r m a a b Ar t i k e l - N r . B 20 20 20 20 20 20 20 20 20 20 20 88 88 88 88 88 88 88 88 88 88 88 611 611 611 611 611

DIODES BYD

Contextual Info: 107 Rectifiers vF max lF (AV) (max) Package Type (A) VRRM (V) *FSM (A) 200 400 20 20 600 800 20 20 20 20 @ lp (A) (V) trr (max) (ns) GENERAL PURPOSE BYD 17D S O D -8 7 1 .5 BYD 17G BYD 17J S O D -8 7 S O D -8 7 S O D -8 7 1 .5 1 .5 BYD17K BYD 17M P R LL4001

Contextual Info: 106 Surface Mount Devices Variable Capacitance Diodes R a t in g s C d R A T IO C d at V R v R Type Package V 'F mA B B131 BB132 BB133 BB134 BB215 S O D -3 2 3 S O D -3 2 3 S O D -3 2 3 S O D -3 2 3 S O D -8 0 C 30 30 30 30 30 20 20 20 20 20 BB219 BB240 B B241

Contextual Info: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch

Contextual Info: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 20 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch

Contextual Info: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch

MOF19A

Contextual Info: MD-OO-5-67-5-407 PRELIMINARY 26. December,2000 M O F19A 20 Gb/s 2 INPUT AND/NAND MODULE DESCRIPTION The MOF19A is an ultra-high speed 2 input AND/NAND module which operates up to 20 Gb/s. FEATURES * Ultra-High Speed DC to 20 Gb/s min. Output Rise Time (20-80%) : tr = 20 ps (typ.)

P1A6

Contextual Info: • /* Photo Interrupters N Electrical Data Part No. Shape 4« 4L * Peak Wave Length <nm Material VCE SAT) I Rise Time (us) CTR Typ. , i ¡ IF(mA) Min.(%); IF(mA) ! IC(mA) Max.(V) Fall Time (us) Typ. PI-A 3 G aA s/S ic 940 20 2.5 20 0.5 0.4 20 20 PI-A4 G aA s/S ic

BA 751 s

Abstract: BA 751 U BA 751 DSA1A4 DSA12G DSA1A2 DFS250A15 DFS250A8 DFS250AR15 DFS250AR8
Contextual Info: 89F 20 B 89F 89F 89F 112D co c o c o co cm 20 B 20 B La l o l o l a o í 112D £ 112D £ 259D i" £ 259D 05 t o t o t o e— £ 259D Ï Ï Ï Ï Ï Ï S S 20 B 20 B CQ s£ E E E E E Ë * Ä Si « if SB S 5 «K«K«K S ühS 25 o G rtriC O <C <C <C * "Ö "Ö " ò S i

BA 751

Abstract: BA 751 s DS135d ds19g DS130T DS19E M20P1.5 DFS250A15 DFS250A8 DFS250AR13
Contextual Info: 89F 20 B 89F 89F 89F co c o c o co cm 112D lo lo la oí 20 B 20 B La 112D £ 112D £ 259D i" £ 259D 05 t o t o t o e— £ 259D Ï Ï Ï Ï Ï Ï S S 20 B 20 B CQ s£ E E E E E Ë * Ä Si « if SB S 5 «K«K«K S ühS 25 o G rtriC O <C <C <C * "Ö "Ö " ò S i

2N2067

Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
Contextual Info: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE

Contextual Info: MX-LN-10/20 Lithium Niobate 10 & 20 Gb/s Intensity Modulators Description Features The MX-LN series of intensity modulators is a complete family of high performance modulators designed for integration in transmission systems and modules at 10 Gb/s or 20 Gb/s.

XNOR ic

Abstract: ic xnor MOF03A PRBS223-1
Contextual Info: NEL MD-00-5-67-5-363 PRELIMINARY 26. December,2000 MOF03A 20 Gb/s 2 INPUT XOR / XNOR MODULE DESCRIPTION The MOF03A is an ultra-high speed 2 input exclusive OR / NOR module which operates up to 20 Gb/s. FEATURES • Ultra-High Speed DC to 20 Gb/s min. • Output Rise Time (20-80%):

icc20

Abstract: SLM-1251YW SLM-13YW AA2202S AA2222S MAA2262S MAA2272S SLM-1251DM SLM-1251DT SLM-1251DU
Contextual Info: fe Sä ts 1* * & t, tt 2 0^ AA2202S S ii MAA2262S MAA2272S ta TL0221 « fé * X SLM-21CDC ftfts Ä S 605 2.4 20 2.2 20 50 605 2.4 20 2.2 20 50 58 605 16 20 2.2 20 96 605 12 20 2.2 130 585 15 2.1 40 610 IIÉ SLM-1251DU S L M 1251DC tejig SLM-1251DM « : T „ - 25‘C!

PRBS223-1

Contextual Info: NEL MD-00-5-67-5-405 PRELIMINARY 26.December.2000 M O F O IB 20 Gb/s 2 INPUT OR / NOR MODULE DESCRIPTION The MOFOIB is an ultra-high speed 2 input OR / NOR module which operates up to 20 Gb/s. FEATURES • Ultra-High Speed DC to 20 Gb/s min. • Output Rise Time (20-80%) :

AWG7102 user manual

Abstract: AWG7102 "hard disk" "read channel" AWG7052 hard disk read channel AWG7000 AWG7051 617 610 465 CONNECTOR PAM matlab source code matlab pn sequence generator
Contextual Info: Arbitrary Waveform Generator AWG7000 Series AWG7102, AWG7101, AWG7052, AWG7051 Features & Benefits 10 GS/s (20 GS/s) and 5 GS/s models 1 or 2 Arbitrary Waveform Outputs – Accurate Timing with only 20 pspk-pk Total Jitter (at 10-12 BER, Typical) – 45 ps Tr/Tf (20% to 80%)

Contextual Info: SKN 20/SKR 20 •frm s SKN 20/12 SKR 20/12 SKN 20/14 SKR 20/14 SKN 20/16 SKR 20/16 800 V 1200 V 1400 V 1600 V 800 V 1200 V 1400 V 1600 V SKN 20/04 SKR 20/04 SKN 20/08 SKR 20/08 V rsm 400 V V rrm 400 V a> o 25 A p 00 o o CD S o Tcase = 125 °C , c (Tca« = 1 0 0 °C ,S

S0511

Abstract: sup65p06 SUB65P06-20 SUP65P06-20 sub65p06
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

sup65p06

Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB65P06-20

Abstract: SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

V20 70108

Contextual Info: UMC UM82C94 ^ S S S S S E CMOS Clock Generator Driver £ E Features • Generates the system clock for V-20 Microprocessor ■ Capable of clock synchronization with other clock ■ Up to 20 MHz operation generators ■ Uses a parallel mode crystal circuit or external frequency

Contextual Info: /S T S G S -T H O M S O N MK48S74 N,X -20/22/25 MK48S75(N)-20/22/25 64K (8K x 8-BIT) FAST CMOS TAGRAM A D V A N C E DATA . 8K x 8 CMOS SRAM WITH ONBOARD COM ­ PARATOR • ADDRESS TO COMPARE ACCESS 20/22/25ns ■ FAST CHIP SELECT TO COMPARE ACCESS 15ns

Contextual Info: Section 20 Electrical Specifications 20.1 Absolute Maximum Ratings Table 20-1 lists the absolute maximum ratings. T a b le 20-1 A b s o lu te M a x im u m R a tin g s Item_ Symbol Rating_ Unit Supply voltage