S 6344 Search Results

Contextual Info: AN6340, AN6344 e 5 * * 8 3 IC AN6340/AN 6344 V T R v ' l > $ *)" — ^ ^ J ^ I U S S / V T R Cylinder S e r v o Control C ircuit H ^ / D e s c r ip t io n AN 6340, AN 6344 !±, VTR n ->U > I ^ co ^ * 1 * # ^ / F e a tu re s • AN 6340, AN 6344 £-if L T i > J

diode T74A

Contextual Info: 3.3V C M O S A D D R E S S BUF F E R IDT74ALVCH1 6344 IDT74ALVCH1 62344 ADVANCE INFORMATION FE ATURES: DESCRIPTION: • C o m m o n feat ures: This device is a 1:4 address line driver built using advanced dual metal CMOS technology. This high-speed, low-power

2SJ328

Abstract: 2SJ328-Z J0502
Contextual Info: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,

str w 6556 equivalent

Abstract: str x 6556 tv power supply str 6556 str w 6556 IM6523 str w 6556 a ICL7103ACPI str 6556 ICL7103A intersil im6100
Contextual Info: H O S s a o o H d o a o iiA i XiaSISOlAID 00I9WI TISHäLNI CONTENTS I n t r o d u c t i o n . 2 S e c tio n I: In te rs il I M 6 1 0 0 C M O S 1 2 - B it M ic ro p ro c e s s o r

082D JRC

Abstract: shicoh b7 shicoh n7 jrc 082d AAJFF nec 1441 SFH 910 SFH 910 235 scr ky 202 45-65Hz
Contextual Info: ^ _ 5 7 - . N E C ,r M O S S f*[U B & M O S Integrateci Circuit mPD17062 P L U lî Æ & S 'V 'b - t M If, 4 fcf * y h * 7 □ V > f ^ p a y 4 1* "/ \ - m m w - , s i a s t g , s s w t - 7 h t x K •7 ° n i r 7 - v r ^ i c - f l > P h n -v F * g U - 7 • 3 y b p - 7 ^ , P L L ^ ]ffi& '> > "fe -,t ' f - <f £ l f 7

2SB1116

Abstract: 2SD1616 2SD1616A PA33
Contextual Info: NEC l i r / \ T X J , S ilic o n 2 N P N l S J f2 '> U □ > D h ^ 1 6 1 6 , 1 T r a n s is t o r s 6 1 6 A ^ NPN Silicon Epitaxial T ra n s is to r Audio Frequency Pow er A m p lifie r M edium Speed S w itching ^ /F E A T U R E S * H B @ /P A C K A G E DIMENSIONS

190721

Contextual Info: 2 : Asse m b ly M a t e r ia l E | 2_3 2 .2 M isce lla n e ou s Scr e w s E | 2_5 2 .3 Ea r t h in g Scr e w s E | 2_7 2 .4 Se lf- Ta ppin g Scr e w s E | 2_8 2 .5 PT Scr e w s E | 2_8 2 .6 Sh e e t M e t a l Scr e w s E | 2_8 2 .7 Th r e a de d Bolt s E | 2_8

S72 FET

Abstract: 2SK1664 rh10 261717
Contextual Info: ^ - 5> • 5/— h M o s M O S F ie ld E ffe c t P o w e r T r a n s is to r 2 S K 1664 N f^ J l//x 9 -M O S FET i i f f l V^T >ÌSÌ/L < , x ^ y f > 7 W m *lSix TU' , it jg X -i -yf- > rmu, DC — DC a >✓-?- ? C i i f t o 2SK1664 i±, N ^ * ; i 4 I S ' ' o,7 - M 0 S F E T

k1506

Abstract: 2SK785 TL08 015 T460 TC-6200 S0532
Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r N f t ^ ^ '° 7 - M O S FET I i f f l 2SK785 i, > F i^ -7 -M O S F E T • f fiit o H S < , , ^ 7 f > i'f J f é H r * * s (W -ÎÎL ! mm >3 . 2 + 0 . 2 , 4 . 7 MAX. 15.7 MAX. DODC 3 1.5 ? (c g iS T 'tc W

j329

Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Contextual Info: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo

LP 8029 L4

Abstract: Mosfet T460 LP 8029 m4 FTR 03-E T460 mosfet transistor dk qq diode F4 3J mosfet n channel k 946 diode U1J 2SK2410
Contextual Info: M O S ffiB W xÜ I^M O S FET M O S Field Effect T ran sisto r 2SK2410 -V -M O S F E T m U M Ì : m m 2 S K 2 4 1 0 IÎN ^ t? ^ H ÎÉ M ^ 7 -M O S F E T T ', 10.0 ± 0.3 4.5 ± 0.2 3.2 ± 0.2 7 W :M R 1 î ê I ‘- i Ê ' Æ 2.7 ± 0.2 o ~ C $ ~ r ft en

stm 8309

Abstract: m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199
Contextual Info: A CO M PA N Y M39003/01/02/03/04/06/09 Solid Tantalum C a p a cito rs S o lid -E le ctro ly te T a n t a l e x C a p a c ito rs , M ilitary MIL-C-39003 Q u alified, S ty le s C S R 0 9 , 13, 21, 23, 33, 91 OF SPRAGUE S T Y L E , D OCU M EN T/D ETAIL S P E C

vlt 2900

Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Contextual Info: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „

Contextual Info: FASTON H o u s i n g s AMPIP Post-Insulation Pods Flag Style Receptacle Housings Sides Ovartap Fun Length B C .2 5 0 S er ies .2 5 0 S er ies ;• Insulation UL 94 1 Color Ota. Max. * Continuous Scrip Nylon A ' Loose ra c e Nylon Continuous Strip B Nylon i wfimi Piece

AH5E

Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
Contextual Info: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E

ifr 044

Abstract: 2SK484 JE 720 transistor JE 33 TRANSISTOR C 5857 X108 26-JE
Contextual Info: NEC j m * T / v r x MOS Field E ffe c t P o w e r T ra n s is to r A 2SK484 N f t ^ ^ '° 7 - M O S j i m FET m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 8 4 i±, > f - M O s n S F E T f"^ > H I/P A C K A G E DIMENSIONS Unit : mm

j353

Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
Contextual Info: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*

Contextual Info: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,

uc 4538

Abstract: UC 3245 J5LJ PA606T PA607T YA53
Contextual Info: MOS M O S Field E ffe ct T ra n sisto r «PA606T F E T 6 f c V 2 ^ :?- N f t ^ M O S MOS FE T £ 2 ¿¿PA606T ( i, k t^ m ft w m L fc s (3 M Ï : mm) »3, X T * m o S C - 5 9 s '° " / 'r ~ is tm tV - '( FET £ 2 — MOS l*I/$ o ^ P A 6 0 7 T ¿ 3 > 7 " I)

TI159

Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor
Contextual Info: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d

Dii 1501

Abstract: UM01 2SJ358 TC8011 Diode UM01 LLB DU P1000 diode w94c RFT M-1
Contextual Info: M O S f ë W ï t ë ù m h 7 > y x $ M O S Field Effect T ra n s is to r 2SJ358 MOS FET m m x ' f y ^ > < 7 m 2SJ358ttP51+ ? O U » M O S FETT5, 5 V W ü& IC W tti tl te cfc-5 iâ ii %mA''ôJfÊ4' 7, -f -y ^ T'T o * S n ° p á 5 t - > f i Í A t f ''( g ; < X - f

9509

Abstract: CRYST 16.384MHZ PSB 8191
Contextual Info: S TANDARD PRO DUCT PMC-951013 PM PMC-Sierra, inc. ISSUE 4 PM6344EQUAD QUADE1 FRAMER P M 6344 E Q U AD QUADRUPLE E1 FRAMER I ssue 4: O c t o b e r , 1996 PMC-Sierra, Inc. 105-8555 Baxter Place, Burnaby, BC Canada V5A4V7 6044156000 S ta n d a rd P r o d u c t

ZTE MF 180 circuit

Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18
Contextual Info: A Ü *> oo ^ co Cd al I M I °» Cd M t—* Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t

Contextual Info: 2 4 T H IS D R A W IN G S U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 C O N T IN U O U S STRESS 26DEC11 S TR IP