S BAND 2-4GHZ POWER AMPLIFIER Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A 5 . 9 —6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET •>rnC V DESCRIPTION The M G FC 3 9 V 5 9 6 4 A is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 —6 .4 GHz band amplifiers. The hermetically sealed metal ceramic

remec mha

Abstract: IEC-801-5 Remec GSM-PCS1900 magnum microwave MHA REMEC remec, amplifier Remec BTS LNA LOW BAND antenna mtbf pdu Remec
Contextual Info: MASTHEAD AMPLIFIER FAMILY GSM-PCS1900 MHz Masthead Amplifiers REMEC Masthead Amplifiers help reduce the cost of base station deployment by extending cell coverage by 20-40%. They also significantly improve call quality and reduce the number of dropped calls which is the number

DC bias of gaas FET

Abstract: uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90
Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 FEBRUARY 1995 Features fi wmË ON-CHIP MATCHING CIRCUITRY * *• ttm m tm m t 30% POW ER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 W ATT OUTPUT POWER General Description Typical Performance

2sc123

Abstract: 2SC1236 2sc1 opto ic diagram 00417
Contextual Info: TOSHIBA -CDISCRETE/OPTOl 9097250 TOSHIBA 39C DI S C R E T E / O P T O > 00416 rO U H F -C -y o u h f ~ c - v k- n m m O |tb O U H F ~ C Band Low Noise Amplifier, * -f ? X Unit U H F ~ C Band Oscillator and in m m High Speed Switching Applications G pe =

031003

Abstract: DCS1800 RF2368
Contextual Info: RF2368 Preliminary DCS/PCS 2.7V LOW NOISE AMPLIFIER Typical Applications • DCS Handsets • General Purpose Amplification • PCS Handsets • Commercial and Consumer Systems Product Description 0.15 0.05 1.59 1.61 0.365 TEXT* The RF2368 is a DCS/PCS low noise amplifier with

Contextual Info: RF2368 Preliminary  '&63&6 9 /2: 12,6 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • DCS Handsets • General Purpose Amplification • PCS Handsets • Commercial and Consumer Systems 3URGXFW 'HVFULSWLRQ 0.15 0.05 1.59 1.61 0.365 TEXT* The RF2368 is a DCS/PCS low noise amplifier with

RF2368

Abstract: DCS1800 4201 SOT-8 PIN
Contextual Info: RF2368 Preliminary 4 DCS/PCS 2.7V LOW NOISE AMPLIFIER Typical Applications • DCS Handsets • General Purpose Amplification • PCS Handsets • Commercial and Consumer Systems 0.365 TEXT* The RF2368 is a DCS/PCS low noise amplifier with bypass switch designed for use as a front-end for

LT5560

Abstract: GSM repeater circuit
Contextual Info: LTC News for Immediate Release For more information, tel. 408-432-1900 Doug Dickinson, Media Relations Mgr., ext. 2233 John Hamburger, Dir., Mkting Comm., ext. 2419 www.linear.com Low Power Active Mixer Offers Wide Bandwidth to 4GHz MILPITAS, CA – May 8, 2006 – A new high performance mixer from Linear Technology

MGF4921AM

Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: MGA-30789 2 - 6GHz High Linearity Gain Block Data Sheet Description Features Avago Technologies’ MGA-30789 is a broadband, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.

MGF4921AM

Abstract: 5442
Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

MGF4921AM

Abstract: transistor GaAs FET low noise 4Ghz
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Ｍar./2009 MGF4921AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4921AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

avago application note 1038

Abstract: MGA30789
Contextual Info: MGA-30789 2 - 6GHz High Linearity Gain Block Data Sheet Description Features Avago Technologies’ MGA-30789 is a broadband, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.

Contextual Info: MGA-30789 2 - 6GHz High Linearity Gain Block Data Sheet Description Features Avago Technologies’ MGA-30789 is a broadband, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.

MGA30789

Abstract: CM05CH2R2C50AH mga-3*89 MGA-30789 GRM1555C1H100JA01 MGA-30789-TR1G GRM1555C1H2R2CA01 CM05C Avago 1038 9532 SCHEMATIC
Contextual Info: MGA-30789 2 - 6GHz High Linearity Gain Block Data Sheet Description Features Avago Technologies’ MGA-30789 is a broadband, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.

IM324

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39VS964A 5 .9 6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5 .9 —6.4 GHz band amplifiers. The hermetically sealed metal ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 ~ 6 .4 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 38V 5964 is an internally im pedance-matched GaAs power FET especially designed fo r use in 5 .9 — 6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

HMC138

Abstract: DC bias of gaas FET 2 Watt rf Amplifier
Contextual Info: RDO H IE S 000 0 03 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power A m plifier HMC138 JANUARY 1994 ■ Features il ÿg J ■ ■ — ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER

Contextual Info: =1004125 0 0 0 0 0 3 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 JANUARY 1994 ! * - ■ ’ ii ■ IB js s Features ■ ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER

RF mixer 433 Mhz

Abstract: low noise block down converter AN1201 HFA3624 MC145202 MRFIC1801 XE1201A fsk transceiver 433mhz murata 2.4 GHz filter LNA 2.4GHZ
Contextual Info: Application Brief AN1201.01 2.4GHz RF/IF up/down converter _ AN1201A.01 Application Note _ 2.4 GHz RF/IF converter for the XE1201A single chip transceiver Author : Gael Goron For further information, please contact XEMICS SA

Contextual Info: ＥＳＬ010ＳＡ 0.1W ＳＯＴ89 Molded Package FET FEATURES ・Up to 4GHz Frequency Band ・0.1W Output Power ・SOT-89 SMT Package ・Die Attached with AuSn preforms ・RoHs Compliant DESCRIPTION The ESL010SA is a high performance GaAs MESFET housed in a low-cost SOT-89 molded package.

Q631

Abstract: NOV-97 682 FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . Schottky gate is designed fo r use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic