S M A196 Search Results

tc514256az

Abstract: tc514256ap TC514256A 300B EH TC514256AP/A TC514256AP/AJ/AZ-70
Contextual Info: TENTATIVE DATA 262,144 W O R D x 4 BIT D YN AM IC RAM DESCRIPTION The TC514256AP/AJ/AZ is the new generation dynam ic R A M organized 262,144 words by 4 bits. The TC514256AP/AJ/AZ utilizes T O S H IB A 'S C M O S Silicon gate process technology as w ell as advanced

A1857

Abstract: c4406 C5488 C5277 c4407 ph64 C-4401 C4555 A1864 C548
Contextual Info: Qui c k t :SSH' \ V \ CEO iXCV P 6 S 1e c t i on , S M C P 8 1 0 T ypo T r a n s i s t o r s 1 2 1 5 1 8 2 0 C | ‘.CP5 Unmarked'-CP6 3 0 \ «a\ 1 1 5 C5537# 2 0 C5540* 3 0 C5541# C5277 C5490# 50 C5489# A1863 C5536* 7 0 C4930 C5231 C5488# A1965 C5539#

MA7805

Abstract: Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD EFFECT TR A N SIST O R S 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

82360SL

Abstract: CD 2399 GP
Contextual Info: 0 M [F § Ä Ä ? 0 M in te i Intel386 SL MICROPROCESSOR SuperSet Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static lntel386TM SL CPU — Runs MS-DOS*, W IN D O W S’ , O S /2 *

2SK19GR

Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

A196

Contextual Info: 8965 S eries E a r p h o n e J a ck 0 2 .5 m m □upiin SMD Type Material: Housing: High temperature housing UL94V-0 withstands IR and VPR soldering methods. Contacts: Phosphor Bronze, Gold Plated. E lectrica l C h aracteristics: Contact Resistance: 30mG max.

3b1 material

Abstract: A196 S M A196
Contextual Info: 9002 Series □upiin SIM C a rd C o n n e c to r S M D M aterial: Housing: High Temperature Plastic UL94V-0. Contacts: Phosphor Bronze. E lectrical C haracteristics: Current Rating: 1 AMP. Dielectric Withstanding Voltage: AC 500V For l minute. Insulator Resistance: lOOOMQmin. at D C 500V.

Contextual Info: Between-Serles Adapters and Tools Between-Series Adapters •■ 6860-2240-00 6861-2241-00 5 ^2 -^4 6 -0 0 “ T S S T M ^o . . . 0SX Jack to SMA Jack 0SX Plug to SMA Plug 0SX Plug to SMA Jack 0SX Jack to SMA Plug :A Conault factory for oomplata apecffloatlone.

LT1667

Abstract: LT1665 CA10 A058 dk 300 a008 82360SL LCD CMC 116 L01 2164 intel INTEL 82360 CD 2399 GP A049 crystal
Contextual Info: 5bE ]> • 4ÔSbl7S D i n o S M E34 « I T L 1 up/prpHLS irrte* Intel386 CORP SL MICROPROCESSOR SuperSet INTEL 'T~-(4c\ 1 7 -3 ^ Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static lntel386TM SL CPU

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

DO case

Contextual Info: CASE CONFIGURATION CHART DO-7 _ 33 3?5 • 7 9?S' 0.375 0 280.0 245 7 1Ì2.B 223 9 652 - POLARITY MARK CATHODE 0.02 - +1 1 0.075 0 508 - IS -« w ? -. * 3 33 3?5 ' 7 925 10-32 UNf-2* (MOD) PITCH 01» MIN 1658 MAI .1697 TO WITHSTAND A TORQUE UP TO 30 IN-LB. WHEN NUT IS

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SA1964

Abstract: 2SC5248 catalogue de transistor data book transistors 2SA SPEC-A315 VCEO160V
Contextual Info: 2SA1964 2SC5248 Transistors High-voltage Switching Audio output am plifier transistor, Stabilized power supply transistor 2SA1964 # F e a tu re s 1 ) Flal DC current gain characteristics. 2 ) High breakdown voltage. ( B V ceo = — 1 6 0 V ) 3 ) High fr. (Typ.150M H z)

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

U6302

Abstract: 1.5K82 1N4295 1.5K9.1A wcx 332 S860 sk47a ke200a IM270 1K6276A
Contextual Info: flICRÔSEMI CORP ESE D • bllSflhS 0001170 1 . jf£ \ T 'ih Z 3 Microjsemi Corp. ' Tfì9<fiod6e*p6f& SANTA ANA. CA SCOTTSDALE,AZ For more information calli 602 941-6300 ' or » ri 4 e l f B f i O t h r u , «*1*1 liO I V B O iO L IIIU • I FEA TU R ES

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

Contextual Info: PRELIMINARY 4,194,304 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION T he T C514101A P/A J/A SJ/A Z is the new gen eratio n dynam ic RAM organized 4,194,304 words by 1 bit. T he TC514101A P/A J/A SJ/A Z utilizes TO SH IB A ’S CMOS Silicon gate process technology as w ell as

N4078

Abstract: 1N40 cg5002 ctm hs 740
Contextual Info: MICROSEMI CORP HSE D • bllSflbS OGOlGHfl 4 1N4057 thru 1N4085A MicrosemiCorp. SANTA ANA, CA 1 "7*// ¡5 SCOTTSDALE, A Z F or m ore inform ation call: 602 941-6300 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES « ZENER VOLTAGE 12.4V to 200V

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

1S1618

Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Contextual Info: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS

TC514256AZ

Abstract: tc514256ap tc514256aj AZ-70 A187 toshiba TC514256AJ-80 TC514256AP/AJ/AZ-10
Contextual Info: TEN TA TIVE D A T A 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514256AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced

Contextual Info: D-Subminiature Accessories Tw o-P iece Backshells Features • • • • • • • Available in plastic, metallized plastic or diecast zinc Diecast or metallized plastic hoods provide EMI/RFI shielding Easy to assemble two-piece construction Reduces inventory through a range of

C945 p 331

Abstract: 59013 h 331 din 74324 STK 412 770 siemens C1012 thermistor B57045-K471-K B59012 59012 h 331 B59121-B1120-A70 59013 f 331
Contextual Info: Inhaltsverzeichnis Bauformen-Übersicht Seite 5 9 Allgemeine technische Angaben Kaltleiter 27 Kaltleiter-Bauformen 49 Allgemeine technische Angaben (Heißleiter) 177 Heißleiter-Bauformen Normierte R/T-Kennlinien 197 260 Einbauhinweise Qualität Umweltschutzmaßnahmen, Klimatische Hinweise