BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
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BDV65CF
Abstract: No abstract text available
Text: Philips Com ponents BDV65F/65AF/65BF/65CF D a ta s h e e t statu s Product specification d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for
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BDV65F/65AF/65BF/65CF
OT199
BDV64F/
64AF/64BF/64CF.
bbS3T31
0D3MA16
S0T199.
BDV65CF
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TRANSISTORE
Abstract: No abstract text available
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Lead,orm °P*,ons LEADFORM OPTIONS • These options require a special part number before ordering. roì f~ c r? • Contact your local Philips Semiconductors representative for pricing, minimum order quantities
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O-220)
8-05W.
MGB44B
MDA22S
OT186
OT186A
86A-02
86A-03
TRANSISTORE
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399-02
Abstract: Power Bipolar Transistors Leadform "Bipolar transistors" sot199
Text: Philips Semiconductors Leadform options Power Bipolar Transistors LEADFORM OPTIONS • These options require a special part number before ordering. • Contact your local Philips Semiconductors representative for pricing, minimum order quantities and part number.
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O-220)
8-05W.
MGB446
S0T199
399-02
Power Bipolar Transistors
Leadform
"Bipolar transistors"
sot199
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors ^ . Genaral TRANSISTOR RATINGS VCEmax The maximum permissible instantaneous Cut-off voltage between collector and emitter terminals when the emitter current is reduced to zero by means of a reverse emitter base voltage, i.e.
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