S10091 Search Results

S10011

Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
Contextual Info: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

Contextual Info: SPICE Device Model SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si4228DY Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si4497

Contextual Info: SPICE Device Model Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SUP50N03-5m1P

Contextual Info: SPICE Device Model SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SbE » • 7T2T237 GDMG217 225 ■ S G T H / T 7 S G S - T H O M S O N M 54H C 423 ^ 7 # RiflD g[S IILI Tr^®lS!ID©i S ^ -y-51-J M 74HC423 G S - T HOt l S ON DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS ■ HIGH SPEED tPD= 28 ns (TYP at VCc = 5V ■ LOW POWER DISSIPATION

74HC12

Abstract: HC 123A diode V54 74hc123
Contextual Info: fZ 7 m 7# M54H C 123/123A M 74H C 123/123A S G S -T H O M S O N R iilD O œ iL IlO T O iD O i DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tp D = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc=4 |iA (MAX.) AT T a=25‘ C

74hc423

Abstract: 74ls423
Contextual Info: / S T S G S -T H O M S O N llO gMI[LI ?DMO©S M54HC423 M74HC423 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS • HIGH SPEED t PD= 28 ns (TYP at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc = 4 M (MAX.) at TA = 25°C ACTIVE STATE lCc = 200 pA (TYP) at VCC = 5V