S10N Search Results

Contextual Info: 8 T 7 6 5 DO NOT SCALE THSO ANGLE METRIC D M EN S10N S M a m Y E L L flU U .V ."R E 51S T A M T "B U C K P O L Y R M ID E W H IT E £ » .t> io u 101 ZYTEL •R ED ■BUC K " P O L W rU D E . C .G U H IT E COLOR FOR REFERB4CE OM .Y WALL NOT BE UPDATED OR.

n20s

Abstract: s10n20
Contextual Info: S10 N20S-001 10.0 2- 5.00 -0.05 1.50 -0.01 18.0 B 2.2 1.5 2- 5.5 0.2 10 B 0.8 1.8 10 16.0 0.5 4.5 0.5 1.0 14.0 1.3 1.3 1.3 A A UNIT: mm Specifications ITEMS UNIT S10N20S-001 Step Angle Number of Phase Drive System Voltage Winding Resistance Detent Torque Holding Torque

KA5H

Contextual Info: 26.1 N *0.13 O <J> N N An ., -«CO o It 1 N V 1' te o u to. 13 19.75 > < - ' A' 4 _ . Ui F IG 1 J U a R ^ ^ C T l- ^ CRECOKKENOED PANEL OPENING 0IM E N S10N Í & h v-'— K • •? — TRADE MARK CCI m - T5STT O C » * * C O N N .IN S E R T IO N C L

Contextual Info: 26.1 N *0.13 O <J> N N An ., -«CO o It 1 N V 1' te o u ' A' Ui to. 13 19.75 > < - 4 _ . F IG 1 J U a R ^ ^ C T l- ^ CRECOKKENOED PANEL OPENING 0IM E N S10N Í & h v-'— K • •? — TRADE MARK CCI m - T5STT O C » * * C O N N .IN S E R T IO N C L

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

ICL7667

Contextual Info: ICL7667 fil HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Description Features • Fast Rise and Fall Times - 30ns with lOOOpF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current

Contextual Info: S10NH3LL N-CHANNEL 30V - 0.013 Ω - 10A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET TARGET DATA TYPE S10NH3LL • ■ ■ ■ VDSS RDS on ID 30 V <0.015 Ω 10 A TYPICAL RDS(on) = 0.013Ω OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED

MX27C256DC-12

Abstract: MX27C256DC-70 MX27C256DC90 MX27C256DC70 MX27C256DC MX27C256DC-55 IN3064 MX27C256 macronix MX27C256DC-15
Contextual Info: m w M XS7CS56 MACRONIX, INC. S5SK-BIT 3SK x 8 CMOS EPROM FEATURES • • • • • • • • • 32K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 55/70/90/100/120/150 ns Totally static operation Completely TTL compatible

MC7824 TO-3

Contextual Info: M O T O R O L A SC { T E L E C O M } 14E D I t.3b?aSB ÜQfllûMLi 3 | T -S 8 -U M 3 MC7800 Series MOTOROLA THREE-TERMINAL POSITIVE VOLTAGE REGULATORS T h e s e v o lta g e re g u la t o rs a r e m o n o lith ic in te g ra te d c ir c u it s d e ­ s ig n e d a s fix e d -v o lta g e re g u la t o rs fo r a w id e v a rie ty o f a p p lic a tio n s

Contextual Info: MSIC M X2 7C 1O O O 1 M - B IT M 2 8 K x 8 } C M O S E P R O M FEATURES • 128Kx 8 organization • Single +5V power supply • +12.5V programming voltage • Fast access time: 45/55/70/90/100/120/150 ns • Totally static operation • Completely TTL compatible

NMC5257A

Abstract: nmc2141
Contextual Info: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require

215730

Contextual Info: Index by P a rt N u m b e r Index Part* Type pg Part# Type 01.0001 B2N 215 02.0014 BL30N 216 050204 SP10AR-N/35 223, 257 08.0111 Mu 0.8d/M20 312 01.0002 B3N 215 02.0015 BL35N 216 050205 SP10AR-N/50 223,257 08.0112 Mu 0.8d/M24x2 312 01.0003 B4N 215 BL40N 216

difference between intel 8086 and intel 80186 pro

Abstract: 44e 402
Contextual Info: INTEL CORP U P/ PR PH LS 44E D Bl 4fl2bl75 G104êG3 4 Q I T L 1 in1U. 80186 HIGH INTEGRATION 16-BIT MICROPROCESSOR • Integrated Feature Set — Enhanced 8086-2 CPU — Clock Generator — 2 Independent DMA Channels — Programmable Interrupt Controller

Contextual Info: TO SH IBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M OSII T P C 8 1 03 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 2 0 S (Typ.)

Contextual Info: MITSUBISHI LSIs M 5 M 2 8 F 1 0 2 A F P , J ,V P ,R V - 8 5 ,-1 0 1048576-BIT 65536-WORD BY 16-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M5M28F102A is high-speed 1048576-bit CMOS PIN CONFIGURATION (TOP VIEW) Flash Memory. This is suitable for the applications with micro­

Contextual Info: MITSUBISHI LSIs M 5 M 2 7 C 2 2 K , J K - 1 2 1 ,- 1 5 1 2097152-BIT 131 (J72-WORD BY 16-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M27C202K, J K - 121, - 151 are high-speed 2 0 9 7 1 5 2 -bit ultraviolet erasable and electrically reprogram­

Contextual Info: P ^ IL O H D IN IÄ I^ Y r i . MX26C51 2 5 'I S K - B I T I B 4 K x B ] C M O S M U L T IP L J E -T IM E -P R O G R A IV IIV /IA B L E R O M FEATURES • 64K x 8 organization O perating current: 3 0 m A S tandby current: 1 0 0 |iA 100 m inim um e rase/prog ram cycles

J18A

Abstract: N18A
Contextual Info: J a n u a r y 1983 EUROTECHNIQUE ET2141/ETL2141 Fam ily 4096 x 1 S ta tic R andom Access M e m o rie s G en eral D e s c rip tio n Features These 4 0 96 -w ord by 1-b it s ta tic ra n d o m access m e m o ­ ries are fa b ric a te d using N -ch a n n e l silic o n -g a te te c h n o ­

Contextual Info: P l ug s, n o n - i n s u l a t e d - 2 - 40 m m dia. Plug S.N with threaded metric stud S.N D E F G *SW R a te d c u r re n t 1 5 0 ° C C R a te d c u r re n t (8 0 ° C ) B W e ig h t D im e n s i o n s A M a x . t ig h t e n in g t o r q u e P a rt#

UC38xx

Abstract: UC3861-64
Contextual Info: IN T E G R A T E D C IR C U IT S U N IT R O D E Resonant-Mode Power Supply Controllers UC1861/64/65 UC2861/64/65 UC3861/64/65 PRELIMINARY FEATURES DESCRIPTION • Controls Zero Current Switched ZCS or Zero Voltage Switched (ZVS) quasiresonant converters

M5M27C512AFP-15

Abstract: M5M27C512 M5M27C512AP M5M27C512AFP M5M27C512AP-15 m5m27c512a
Contextual Info: MITSUBISHI LSIs M5M27C512AP.FP-15 524288-BIT 65536-WORD BY 8-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M27C512AP, FP are high-speed 524288 -b it one time programmable read only menories. They are suitable for microprocessor programming

D4027

Abstract: 1348 OH mav 11 EIA-232 MAX241 SN75LBC241 CX 2859
Contextual Info: SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS S LLS 13 7 C - D 4 0 2 7 , MAY 1 9 9 2 - REVISED APR IL 1993 • Operates With Single 5-V Power Supply • Meets EIA/TIA-232-E, 1991 Specifications Revision of EIA-232-D and CCITT V.28 DW PACKAG

Contextual Info: S ìp v /i SP574B/674B/1674B/774B SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters • Complete Monolithic 12-Bit A/D Converters with Sample-Hold, Reference, Clock and Tri­ state Outputs ■ Full Nyquist Sampling at All Sample Rates ■ Choice of Sampling Rates — 40kHz, 66kHz,

TPC8103

Contextual Info: TO SH IBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M OSII T P C 8 1 03 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 2 0 S (Typ.)