S1301 Search Results

sharp mask rom

Contextual Info: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH

C67078-S1301-A5

Contextual Info: BUZ 11 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 Ω TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter

C67078-S1301-A2

Abstract: buz11
Contextual Info: BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 11 50 V 30 A 0.04 Ω TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol

buz11

Abstract: 11S2 BUZ p channel buz 11 a Buz 11 BUZ11A
Contextual Info: SIEMENS BUZ 11 BUZ 11 A, BUZ 11 S2 SI PMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated O VPT05381 Type VDS Id Tc Ordering Code 50 V 30 A 29 "C ^DS on 0.040 Q. Package 1> BUZ 11 TO-220 AB C67078-S1301-A2 BUZ 11 A 50 V 26 A 25 "C

buz11

Abstract: transistor Buz 11 BUZ11A
Contextual Info: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vqs BUZ 11 A 50 V b 26 A ^bs{on 0.055 fì Package Ordering Code TO-220 AB C67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1301-A3

Abstract: BUZ11A
Contextual Info: BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 Ω TO-220 AB C67078-S1301-A3 Maximum Ratings Parameter

Contextual Info: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 11 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 11 S2 60 V 30 A ^DS on Package Ordering Code 0.04 Q TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vds 50 V ^DS on 0.04 ß hi 30 A Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ11S2

Abstract: buz11 siemens
Contextual Info: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current

BUP 312

Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186

transistor Buz 11

Abstract: buz11
Contextual Info: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vbs 50 V h 30 A ^%>S{on 0.04 Si Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated

Contextual Info: IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • P-Channel - 250 RDS(on) () VGS = - 10 V • Surface Mount (IRFR9214, SiHFR9214) 3.0 Qg (Max.) (nC) 14 • Straight Lead (IRFU9214, SiHFU9214)

IRLL110PBF

Abstract: IRLL110TRPBF
Contextual Info: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel

S13017

Contextual Info: IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFR912

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S

Contextual Info: IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mountable (Order As IRFR9020, SiHFR9020) • Straight Lead Option (Order As IRFU9020, SiHFU9020) • Repetitive Avalanche Ratings

Contextual Info: SPICE Device Model SUM110N04-2m1P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SUM110P08-11L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: IRLR014, IRLU014, SiHLR014, SiHLU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION