S1D DIODES Search Results

Contextual Info: S1D-Q … S1M-Q S1D-Q … S1M-Q Surface Mount Silicon Rectifier Diodes AEC-Q101 Silizium-Gleichrichterdioden für die Oberflächenmontage (AEC-Q101) Version 2013-10-21 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5 1.5 ±0.1

Contextual Info: S1D Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)75 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’

S1m diode

Abstract: DO-214AC diode marking SD S1J-004HE3/5AT
Contextual Info: S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current

1N4001 SMB

Abstract: 1N4007 SMB 1N4000 1n4004 1n4002 RS3B/BB US13
Contextual Info: BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series 1N4000 1N5391 1N5400 S1 S2 S3 PX6A h AV H •[. 1.5 1 1.5 S ’■\ 50 1N4001 1N5391 1N5400 S1A S2A S3A PX6A01 100 1N4002 1N5392 1N5401 S1B S2B S3S PX6A02 :i.i 200 1N4003 1N5393 1N5402 S1D S2D S3D PX6A03

sma diode marking sm vishay

Contextual Info: S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop

diode S1G

Contextual Info: S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current

SMA MARKING S1G

Abstract: SMA MARKING S1d SMA MARKING S1M SMA MARKING S1J s1m marking code JB marking transistor MARKING CODE S1M SMA s1m sma s1a sma diode SMA marking AB
Contextual Info: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak

BSD215

Abstract: bsd214 BSD212 BSD213 transistor BD 341
Contextual Info: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high

SMA MARKING S1d

Contextual Info: S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S1A S1B S1D S1G S1J S1K S1M Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly

s1m marking code

Abstract: SMA MARKING S1J S1A-13-F jb marking code JB marking transistor S1 marking S1A-13 s1a marking code marking code 63, sma package S1BB
Contextual Info: S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak

s1m marking code

Abstract: S1A-13-F S1AB-13-F SMA MARKING 14 35
Contextual Info: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak

Contextual Info: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak

SMA MARKING S1d

Abstract: s1m marking code
Contextual Info: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak

s1m marking code

Abstract: to-236 marking code S1A
Contextual Info: SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB S1BB S1DB S1GB S1JB S1KB S1MB S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • • • • • Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak

Contextual Info: Standard Recovery Power Diodes S1 Series Features: • • • • • • For surface mounted application Glass passivated junction chip Low forward voltage drop Easy pick and place High surge current capability High temperature soldering : 250°C / 10 seconds at terminals

S1A100

Contextual Info: S1 Series Standard Recovery Power Diodes Features: • For surface mounted application. • Glass passivated junction chip. • Low forward voltage drop. • Easy pick and place. • High surge current capability. • High temperature soldering: 250°C/10 seconds at terminals.

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: SMA MARKING S1G S1G HE3 marking SM DO-214AC MARKING CODE TL DO-214AC VISHAY MARKING SJ SMA s1m marking code MARKING CODE S1M SMA SMA MARKING S1J S1M HE3
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SG SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA s1m marking code S1J HE3 vishay sj 96 SMA MARKING S1G S1J SMA RECTIFIER S1J-E3
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: s1jhe3 VISHAY MARKING SG SMA SURFACE MOUNT DIODES MIL GRADE SMA MARKING SJ JESD22-B102 J-STD-002 s1j 96 HIGH VOLTAGE DIODES SURFACE MOUNTED MIL GRADE VISHAY MARKING SJ SMA
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: Diodes SMD Type 1.0A Surface Mount Glass Passivated Rectifier S1A-S1M Features Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly Maximum Ratings and Electrical Characteristics @ Ta = 25

VISHAY MARKING SG SMA

Abstract: GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D J-STD-002B SG 27 surge current
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •

1N4007 sma

Abstract: 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB
Contextual Info: § BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series Voltage l(AV 50 200 100 300 400 500 600 1N4004 800 Outline 1000 1N4000 1 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007 DO-41 1N5391 1.5 1N5391 1N5392 1N5393 1M5394 1N5395 1N5396 1N5397 1N5398 1N5399

VISHAY MARKING SG SMA

Abstract: VISHAY S1M GENERAL SEMICONDUCTOR MARKING SJ SMA S1G Vishay S1M e3 S1G HE3 S1M DO-214AC VISHAY MARKING SG VISHAY SMA SJ S1JHE3
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: UNISONICTECHNOLOGIESCO., LTD L8312 Preliminary LINEAR INTEGRATED CIRCUIT DU AL POLARI Z AT I ON AN D T ON E SWI T CH CON T ROLLER  DESCRI PT I ON The UTC L8312 is specially designed integrated circuit for control satellite receiver front-end block switch and provides