S22L Search Results

telemetry block diagram

Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
Contextual Info: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with

Contextual Info: DATA SHEET Part No. AN26024A Package Code No. ALGA005-W-0609ANA Publication date: March 2011 Ver. AEB 1 AN26024A Contents „ Overview ……………………………………………………………………………………………………………. 3

wlcsp inspection

Abstract: S22HA
Contextual Info: DATA SHEET Part No. AN26025A Package Code No. ALGA005-W-0609ANA Publication date: May 2012 Ver. AEB 1 AN26025A Contents „ Overview …………………………………………………………………………………………………………… 3

mcp01

Abstract: MABT01 09326 dc to 3 ghz lna application circuits RF Switch qfn RF front end
Contextual Info: MCP01 2.4 to 2.5 GHz RF Front End IC - Description The MCP01 contains a power amplifier PA , a low noise amplifier (LNA), and a SPDT switch. It is a 16-pins IC with 3x3mm2-QFN package and includes all the RF circuits that are needed between transceiver and antenna. Besides, the RF input and output impedance are 50Ω matched. Lots of

2sa1424

Abstract: NE88900 NE889
Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in

BGA735N16

Contextual Info: BGA735N16 High Linearity Tri-Band UMTS LNA 2100, 1900/1800/2100, 800/900MHz Data Sheet Revision 3.5, 2009-11-24 Final RF & Protection Devices Edition 2009-11-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: BGA771N16 High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900MHz Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

rf transmitter receiver 315mhz circuit diagram us

Abstract: rf 315mhz RF Transmitter 315MHz rf traNsmitter receiver 315mhz MAX1470 MAX1470EUI IC-237
Contextual Info: 19-2135; Rev 1; 8/02 315MHz Low-Power, +3V Superheterodyne Receiver Features ♦ Operates from a Single +3.0V to +3.6V Supply ♦ Built-In 53dB RF Image Rejection ♦ -115dBm Receive Sensitivity* ♦ 250µs Startup Time ♦ Low 5.5mA Operating Supply Current

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

TGS 880

Abstract: INFINEON PART MARKING BGA751L7 S12L
Contextual Info: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

MRF942

Abstract: NF50
Contextual Info: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features

S22Hc

Abstract: S22HA D-10 D-12 S22Lc S22LA
Contextual Info: DATA SHEET Part No. AN26011A Package Code No. SSMINI-5DC Publication date: July 2010 Ver. AEB 1 AN26011A Contents „ Overview ………………………………………………….…………………………………………………………. 3 „ Features ………………………………………………….…………………………………………………………. 3

S22HA

Abstract: S22LB S11LB
Contextual Info: DATA SHEET Part No. AN26013A Package Code No. SSMINI-5DC Publication date: July 2010 Ver. AEB 1 AN26013A Contents „ Overview ………………………………………………….…………………………………………………………. 3 „ Features ………………………………………………….…………………………………………………………. 3

BGA736

Abstract: HSDPA BGA736L16 KC639 T1540 T0712
Contextual Info: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: D a t a S he et , V 3. 0, A ug us t 2 00 8 B G A 7 35 L1 6 H i g h L i n ea r i t y T r i - B an d U M T S L N A 2 1 00 , 1 9 0 0/ 1 8 0 0 /2 1 0 0 , 80 0 / 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-08-26 Published by Infineon Technologies AG

mrf571

Abstract: MRF5711LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO's. Available in a surface-mountable plastic packages. This

smd resistor 0402 footprint dimension

Abstract: BGA713L7 TGS 821 C166 T1533 713L LNA marking R0
Contextual Info: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

LT 5206

Abstract: MWA0211L MWA0204 MWA0211 MWA0270 WA02
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M W A 0204 M W A 0211L M W A 0270 M o n o lith ic M ic ro w a v e In te g ra te d C irc u it . . . d e s ig n e d f o r n a r r o w o r w id e b a n d IF a n d RF a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l

TGS 2620

Abstract: UMTS transistor TGS 2600
Contextual Info: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

MAX1470

Abstract: MAX1470EUI S11L
Contextual Info: 19-2135; Rev 0; 8/01 315MHz Low-Power, +3V Superheterodyne Receiver Features The MAX1470 is a fully integrated low-power CMOS superheterodyne receiver for use with amplitude-shiftkeyed ASK data in the 315MHz band. With few required external components, and a low-current

BGA751L7

Contextual Info: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

smd resistor 0402 footprint dimension

Abstract: BGA711L7
Contextual Info: Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A 2100, 1900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: AWL9565 802.11a/n Power Ampliier & Switch with 802.11 b/g/n RX/TX/ Bluetooth Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • • • • 3% Dynamic EVM @ Pout = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 30 dB of Linear Power Gain