S22V Search Results

MMIC SWITCH

Abstract: RTPA5250-130
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

Contextual Info: M icroelectronics Lim ited 3 AMP, 3-TERMINAL POSITIVE REGULATORS IP123A, IP323A, IP123, LM123 FEATURES DESCRIPTION The IP123A/IP323A/LM123/IP 123 series of three terminal, three amp regulators is available with several fixed output voltages and three p a c k a g e o p tio n s , g re a tly

f4316

Abstract: F4319F MGF4319F
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

mitsubishi microwave

Abstract: MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A , GaAs OUTLINE DRAWING F E T w ith an N-channel schottky U n it: m illim e te rs inches gate, is designed fo r use in U H F band am plifiers. FEATURES

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES

Contextual Info: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm | | | | | | | | | | | | | | APPLICATIONS: • GPS STANDARD SPECIFICATIONS:

Contextual Info: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm | | | | | | | | | | | | | | APPLICATIONS: • GPS STANDARD SPECIFICATIONS:

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 37V 404S 1 4 .0 — 14.5G H z BAND SW INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic

7066583

Abstract: Lea tv
Contextual Info: PLC-45 4 5 W 5 i n g l e Q u i p ut L E D P o w e r S u p p l y scries | F ? a 1 u re s : U ì v t ì ' S j A C inpul : F u i id ng* F j y sù -aiiid plaslieeass *i1h fe-ii -lai alaùt slyle cl I/O Hu 1-1n t m l i i i c u f l H i i m i n g ìH lvm flc usteM e ¿¡d 1 ij1 vc 1^je a id rjjrrem lévtìì

LM340-12 TO-3

Abstract: LM140-12 IP140A IP7800 IP7800A LM140 LM340 LM140H-xx IP7815 TO220 LM340-12
Contextual Info: 1 Amp, 3-Terminal Positive Regulators INTEGRATED SEMICONDUCTORS, LTD. Features The IP140A / L M 140/ IP 240A / L M 240/ IP340A/ L M 3 4 0 / IP 7 8 0 0 A / IP 7 8 0 0 / IP 7 8 0 0 A C / IP 78 00C series of three-term inal regulators is available with several fixed output voltages making them

DIVERSITY MODULE MURATA

Abstract: raytheon ltcc 78-S11 RAYTHEON RTPA5250-130 murata ltcc grm39 MAXB68 16qam-modulated power amplifier mmic
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier MMIC/Switch Module for WLAN Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

IP78M12ACT

Abstract: EN 553 IP78M15A ej-40 IP78M05AH NS-28 N23V ip78m12h
Contextual Info: In te g ra te d power i> q | Massaia □□□□ 33 a t> 82D 4825898 INTEGRATED POWER 0 0 3 3 0 ^ 0 ^ 0.5 Amp, 3-Terminal Positive Reguiators ÊM TEG R A TED J 9 0 B M 5 P? SEMICONDUCTORS, LTD. Features Description 1% output voltage tolerance 5,12, and 15V fixed output

22CV10AP

Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
Contextual Info: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide

S2-5V

Abstract: LM340-15 LM140 LM140A LM340 LM340-12 LM340-5 LM340A S30V
Contextual Info: 202 — LM140, LM140A, LM340, LM340A > 'J — X OEìtiti, 3 [L M 340] • ^ * ^ « 1 4 0 0 ^ = 0 . 2 2 ^ , C W = 0 .1 //F , §2 rii 5È & f* VOUT T j—2 5 V , 5m A á lour Si 1A 5 m A ¿ I0(/T¿ 1A ,P0 S 15W y MJN< t/w< i/IouT~500m A , Tj= 25Z = V'/,vSl'mï

ha 1406 ha

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package

Contextual Info: De | aiBMb^B □ DO DOS S L Transistor Absolute Maximum Ratings CaseTemperature*25°C -Symbols Features v • Usable to 4 GHz • Rugged Hermetic Package V .c b o . VcEO - V ebo Description . Ic Pt The SCA 0 0 0 5 is a small signal NPN RF-UHF silicon bipolar transistor, With ft—2.2 GHz, the device is

800w power amplifier circuit diagram

Abstract: 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v
Contextual Info: ELECTRONIC MEASUREMENTS, INC. 405 ESSEX RD., NEPTUNE, N.J. 07753 83 458-001 - FIVE YEAR WARRANTY El e c t r o n i c Me as ur em e nt s, Inc. w a r r a n t s this equipment m a n u f a c t u r e d by l i b and sold by us Dr our a u t h o r i z e d agents to a m a n u f a c t u r e r or

CAPACITOR SM

Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact
Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

Contextual Info: KA78TXX LINEAR INTEGRATED CIRCUIT 3-TERMINAL 3A POSITIVE VOLTAGE REGULATORS This family of fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 amperes. FEATURES • • • • • • • • Output current in excess of 3.0 ampere

Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

gD 679 transistor

Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U nit; n il lt r FEATURES • • Class A operation