S3 DIODE SCHOTTKY Search Results

S3 marking DIODE

Abstract: 1SS367
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol

Marking Code "s3" diode

Abstract: MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol

3m sod

Abstract: marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

Marking Code "s3" diode

Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃

S3 DIODE schottky

Abstract: S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode
Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1

S3 marking DIODE

Abstract: SD101AWS SD101BWS SD101CWS sod323 schottky
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES + FEATURES - MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

S3 marking DIODE

Abstract: SD101AW SD101BW SD101CW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter

S3 marking DIODE

Abstract: SD101AWS SD101BW SD101BWS SD101CWS
Contextual Info: SD101AWS-SD101CWS SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking

S3 marking DIODE

Abstract: SD101AW SD101BW SD101CW
Contextual Info: SD101AW-SD101CW SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking Voltage

S3 Package

Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code

Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= max 0.3V @ IF=1mA • Low reverse current : IR= max 0.5 ㎂ (@ VR=5V) Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 0.8±0.1

S4 46a DIODE schottky

Abstract: APT0406 APT0501 APT0502 APTM50HM75SCTG A1012-0
Contextual Info: APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR1A Q3 G3 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

CD0603B00340

Abstract: Marking "s3" Schottky barrier
Contextual Info: PL IA NT Features • ■ S3 *R oH S CO M ■ ■ Applications Lead free as standard RoHS compliant* Leadless Low stored charge ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD0603/1005 Schottky Barrier Chip Diode Series

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

M2805

Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • C8 A1 RDS ON = 120mΩ(typ.) @ VGS= -2.5V A2 S3 Super High Dense Cell Design Reliable and Rugged G4 Top View of DFN3x2-8 D (5, 6) C (7, 8) S (3) A (1, 2) VF=0.45V (typ.) @ If=500mA.

S3 DIODE schottky

Abstract: 100N10S1
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)

S3 DIODE schottky

Abstract: 100N1
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)

A2 DIODE SMD CODE MARKING

Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Contextual Info: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.

schottky diode 43t

Abstract: C25T05Q C25T06Q S3 DIODE schottky
Contextual Info: SCHOTTKY BARRIER DIODE C25 T05 Q C25T06Q 2 7 .7 A / 5 0 ~ 6 0 V 4.8U 89 4 .4 Ü 7 3 P L S Q U A R E -P A K f 10.6 .417) f 09.6Î.378) .6 (.3 " 1 0 .li.3 9 8 ) 1-81.071)* i _ 0 ~ 0 .3 (. 0 1 2 ) FEATURES I.4(.Q 55) I TltW) L- »Similar to TO-263AB Case,

Contextual Info: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: SDB110Q SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description The SDB110Q Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature