S4023 Search Results

4011 CMOS NAND GATE

Abstract: 4011 cmos logic gate cmos 4000 series 4023 MOS 4011 NAND gate 4011 4011 CMOS 4011 N4011 4011 c-mos
Contextual Info: signotics C MOS NAND GATES ADVANCE SPECIFICATIONS C-MOS 4000 S E R IES A D VA NC ED 01935429 _ PIN CONFIGURATIONS DESCRIPTION These Signetics Series 40 00 C-MOS devices are positive logic N A N D gates. Operating voltage range is + 3 V to +15V. S w itching speeds are ty p ic a lly 25ns. Quiescent power

V23107-S4042-B404

Abstract: V23107 siemens v23100 V23107-S4343-B404 V23100-S302-A225 V23107-S4023-B404 V23107-S4342-B404 V23107-S4022-B404 V23100-S302-A303 V23100-S302-A210
Contextual Info: Solid-State Relays V23100 V 2 3 1 0 0 -S *-A * * Types A2 and A8 V23100-S302-A303 Type A3 Screw terminals Printed circuit terminals Approximate weight: 85 g Approximate weight: 22 g 3« U, .l i i 5 U - — 27.94’ |- r Tolerances: ± 0,3 mm Accessories:

Si3483DV

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3483DV

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3467DV

Abstract: si3467
Contextual Info: Si3467DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.094 @ VGS = −4.5 V −3.8 APPLICATIONS D Load Switch − PC − Game Machine

Si3483DV

Abstract: si3483dvt1e3
Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

v23107

Abstract: I22T siemens v23100 zero voltage switch V23107-S V23100 s434 B404 E48393 V23100-S
Contextual Info: Solid State Relays SSR V23100-S V23107-S Features Design ● Fully electronic semi-conductor relays – With or without zero voltage switch ● High switching speed and endurance – One- and three-phase relay types ● Switch-on at voltage zero crossing, with relays with zero

SOT23 PMOS

Abstract: D0218 diode EGP 30b tSoP38xxx TSOP5700 2N7002x tSoP4xxx jfet to 92 TSOP34XXX SMD DO-213 ZENER DIODE
Contextual Info: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2

40235

Abstract: Si4963BDY Si4963BDY-T1
Contextual Info: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)

Si9933BDY

Abstract: S402
Contextual Info: Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free)

D5073

Abstract: LPC47N249 marvell 88SA8040 INVENTEC KNOCKHILL 10 tc7007 D5070 l556 PLC1045P 63A05
Contextual Info: KNOCKHILL MP BUILD 2005.01.10 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : KNOCKHILL 10 SIZE CODE A3 CS SHEET REV DOC. NUMBER TC7007 1 A05 OF 63 TABLE OF CONTENTS

40235

Abstract: Si4963BDY Si4963BDY-T1
Contextual Info: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)

Si3481DV

Contextual Info: Si3481DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.048 @ VGS = −10 V −5.3 0.079 @ VGS = −4.5 V −4.1 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

72748

Abstract: Si9933BDY
Contextual Info: Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free)

40237

Contextual Info: Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free)

40236

Contextual Info: Si3443BDV Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.060 @ VGS = −4.5 V −4.7 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested

Contextual Info: Si3481DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.048 @ VGS = −10 V −5.3 0.079 @ VGS = −4.5 V −4.1 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3467DV

Abstract: 40238
Contextual Info: Si3467DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.094 @ VGS = −4.5 V −3.8 APPLICATIONS D Load Switch − PC − Game Machine

Si6926ADQ

Contextual Info: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2

stv 4326

Abstract: Inventec KNOCKHILL 10 inventec knockhill 10a CV136 AD30/stv 4326 ACDL B1413-1 ati sb400 FDS6900S
Contextual Info: KNOCKHILL 10A PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 REV DOC. NUMBER X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE

SP8K10SFD5_ROHM

Abstract: LPC47N249 inventec C5686 D5073 23D36 ddr2 C5706 c5690 SP8K10
Contextual Info: KNOCKHILL20 MP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 20 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF A03 61 TABLE OF CONTENTS

Si6926ADQ

Contextual Info: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2

Contextual Info: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)