S60SC6M
Abstract: No abstract text available
Text: SHINDENGEN Schottky Rectifiers SBD Dual OUTLINE DIMENSIONS S60SC6M Case : MTO-3P Unit : mm 60V 60A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ● High current capacity APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment
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S60SC6M
Tj150
S60SC6M
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S60SC6M
Abstract: No abstract text available
Text: SHINDENGEN Schottky Rectifiers SBD Dual OUTLINE DIMENSIONS S60SC6M Case : MTO-3P Unit : mm 60V 60A FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment
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S60SC6M
Tj150
S60SC6M
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN Schottky Rectifiers SBD Dual OUTLINE DIMENSIONS S60SC6M Case : MTO-3P Unit : mm 60V 60A FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment
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S60SC6M
Tj150
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7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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LT GBL406
Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Text: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA
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5CE10
5CE100
5CE100A
5CE100C
5CE100CA
5CE10A
5CE10C
5CE10CA
5CE11
5CE110
LT GBL406
SMBJ8.5CA
2KBP206
TS820-800T
LT KBJ608G
T1M5F600A
31DQ100
30BQ050
BYM95C
SB0100
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Untitled
Abstract: No abstract text available
Text: S'sryMSchottky P— J Barrier V J T ^<71*—K Diode 7 0 1 Twin Diode • O U T L IN E D IM E N S IO N S S60SC6M 60V 60A ■ R A T IN G S ÎÊ & ÎS i^ /Ë fê is A b s o lu te M axim um R a tin g s a K itSymbol Item O perating J u n c tio n Tem perature -tir A . M & M Y i
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S60SC6M
50HzOEKiS,
as36riRi
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aa 118 diode
Abstract: 05nm5
Text: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3
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S60SC6M
J515-5
aa 118 diode
05nm5
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S60SC6MT
Abstract: W116 diode marking aj
Text: Schottky Barrier Diode Twin Diode S60SC6MT • f tt g H O UTLINE Package ' MTO-3PT U n it ; m m W e ig h t 5.2 k T y p 60V 60A Feature • Tj=150lC Tj=150°C • 6 Small 0 jc High lo Rating jc ö V J \ £ li 'S 60SC6MT ~ N-H- Polarity ÎR T 7 ) Main Use
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S60SC6MT
S60SC6MT
J533-1
W116
diode marking aj
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60sc6mt
Abstract: No abstract text available
Text: Schottky Barrier Diode mtmm Twin Diode o u t l in e S60SC6MT U nit: mm Package : MTO-3PT Weight 5.2«ITyp 60V 60A Feature • Tj=150t: • Tj=150°C 6 8 jc J ÿ 'J v ÿ U • Small jc • High lo Rating M ain Use • • • • • DC/DC n y J K - 9 • m m .'f - h . OA1&Ü
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S60SC6MT
60sc6mt
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S60SC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : MTO-3P S60SC6M Unit-mm Weight 6.1g Typ 60V 60A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • * i « S • Small 9 jc • High lo Rating i @ Rating Main Use
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S60SC6M
S60SC
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60sc6mt
Abstract: S60SC6MT diode code ae diode marking code h6 marking code u8 U8 marking
Text: Schottky Barrier Diode Twin Diode OUTLINE S60SC6MT Unit : mm Weight 52g Typ Package I MTO-3PT o v l-ü ii(M ) 60V 60A Feature • T j= i5 (rc • Tj=150°C • P r r s m P K t? • P rr sm R ating • Small 8 jc • High lo Rating • 9 jCÖtyJvSU' 'sanûo
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S60SC6MT
15ffC
60SC6MT
J533-1
60sc6mt
S60SC6MT
diode code ae
diode marking code h6
marking code u8
U8 marking
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Untitled
Abstract: No abstract text available
Text: '> 3 7 -r*-K 7 Schottky Barrier Diode S Twin Diode O U TLIN E D IM E N S IO N S S60SC6M 60V 6QA • T j 150”C # P rrsm 7 > X 3 y V i- S S t • e jc w s u •S R K S •D C/D C H'y K—9 mmm. v - u . OA«g§ • a « , x - ip jjm m RATINGS • ÎÉ f t iB iA Æ t ë
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S60SC6M
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548B
Abstract: S50VB80 S201MN2B-06 S201MN2B-10 S60SC4M S40FFK01 S40FFK04 S40FFK06 S40FFK08 S40FFK10
Text: - 142 - n A m m ?3 isa tt a? -% ft # & ft £ S40FFK01 S40FFK02 S40FFK04 S40FFK06 S40FFK08 S40FFK10 S40FFK12 S40FHA01 S40FHA02 S40FHA04 S40FHA06 S40FHA08 S40FHK01 S40FHK02 S40FHK04 S40FHK06 S40FHK08 S40FNA02 S40FNA04 S40FNA06 S40FNA08 S40FNA10 S40FNA12 S40FNK02
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S40FFK01
S40FFK04
S40FFK06
S40FFK08
S60SC3ML
S60SC4M
S60SC6M
S201MN2B-02
300DX3t7jyfÃ
S201MN2B-04
548B
S50VB80
S201MN2B-06
S201MN2B-10
S60SC4M
S40FFK01
S40FFK08
S40FFK10
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S40FHA01
Abstract: S201MN2B-06 548B S40FFK01 S40FFK04 S40FFK06 S40FFK08 S40FFK10 S40FFK12 S40FHA02
Text: - 142- A m £ S40FFK01 S40FFK02 S40FFK04 S40FFK06 S40FFK08 S40FFK10 S40FFK12 S40FHA01 S40FHA02 S40FHA04 S40FHA06 S40FHA08 S40FHK01 S40FHK02 S40FHK04 S40FHK06 S40FHK08 S40FNA02 S40FNA04 S40FNA06 S40FNA08 S40FNA10 S40FNA12 S40FNK02 S40FNK04 S40FNK06 S40FM08
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S40FFK01
S40FFK04
S40FFK06
S40FFK08
25MAX
24MIN
25M1N
25MIN
S40FHA01
S201MN2B-06
548B
S40FFK01
S40FFK08
S40FFK10
S40FFK12
S40FHA02
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SHINDENGEN DIODE
Abstract: KIVF
Text: y 3 y h * / i ' J T f ' f ï - F Schottky Barrier Diode_ y 'O m Twin Diode • fl-J fê tfâ s IS I O U T L IN E D IM E N S IO N S S60SC6 M 60V 60A IS il • T j 1 50TC ♦ P hrsm y7 A ' 3 y i ' i S a i I • e jc ô '/j'S x i ffl m msRmm • D C /ü C z iV A - S '
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S60SC6
S60SC6M
SHINDENGEN DIODE
KIVF
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S60SC3
Abstract: 548B S40FFK01 S40FFK04 S40FFK06 S40FFK08 S40FFK10 S40FFK12 S40FHA01 S40FHA02
Text: - 142- A m £ S40FFK01 S40FFK02 S40FFK04 S40FFK06 S40FFK08 S40FFK10 S40FFK12 S40FHA01 S40FHA02 S40FHA04 S40FHA06 S40FHA08 S40FHK01 S40FHK02 S40FHK04 S40FHK06 S40FHK08 S40FNA02 S40FNA04 S40FNA06 S40FNA08 S40FNA10 S40FNA12 S40FNK02 S40FNK04 S40FNK06 S40FM08
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S40FFK01
S40FFK04
S40FFK06
S40FFK08
300DX3t7.
S201MN2B-10
300nX3t7,
E1471
ERE24ERE26
ERE76
S60SC3
548B
S40FFK01
S40FFK08
S40FFK10
S40FFK12
S40FHA01
S40FHA02
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S4UG
Abstract: DF25SC6M SHINDENGEN 33 s60sc4m
Text: •S •Bl » K; m -i. •4 M I at » na* m ff! 3} 9t äS äs 3t 3t 2 lat ? ’S . % 2 9t -o æ 2 -X -X H H m vi pW- i ridi m m. >ii wt N> I a rS IH 3? W > 9tt >4 ° c m m ga (£ — < V fH] $ 38 fit h£ 35 ^ d a vt A ^ I S EG -/I 9' Si Vt A m m ■H a I V*
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S60HC1R5
Abstract: S25SC6M
Text: Schottky Barrier Diodes High frequency rectifying Absolute Maximum Ratings Type No. •&S40HG1R5 ☆S60HC1R5 SFSSC3L SF10SC3L SF20SC3L SF30SC3L ☆S40HC3 V rm lo . iyi. . I'M 15 [°C] Conditions If Ir max V r=Vrm Cj (typ) 9 jc (max) [V] [A] [mA] [pF]
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