S7 200 MICROWAVE Search Results

Contextual Info: SINE WAVE SURFACE MOUNT PXO DFN S8-MLS 3.3 V 19.8±0.3 KEY FEATURES 15.24 12.8±0.2 300 to 500 MHz ± 20 ppm/15 years stability available 1.27 1.65 Analogue frequency multiplication APPLICATIONS H±0.2 1.2 18.4 Microwave transmissions H = 5.50 mm DFN S8

Magnum Microwave mixer

Abstract: magnum microwave s7 200 noise Magnum Microwave mc24p-7
Contextual Info: MAGNUM MICROWAVE CORP b ì dË J S7 S2 73 0 □ □ □ □ 02 b 0 D T-T7-OJ DOUBLE BALANCED MIXER L: R: I: 0.2—200 MHz 0.2—200 MHz DC—200 MHz • LOW CONVERSION LOSS • HIGH ISOLATION • HERMETICALLY SEALED TO-8 PACKAGE GUARANTEED SPECIFICATIONS in

ASTM-D4935

Abstract: touch screen Lamination optically clear adhesive Gardner 8870 D4935 ASTM-D-4935 8880-S7 ASTM-D-1003 717B 8880-S3
Contextual Info: Technical Data August, 2010 3M Unpatterned Transparent Conductor 8880 S3 & 8880 S7 Product Description 3M™ Unpatterned Transparent Conductor 8880 S3 and 8880 S7 comprise a polyester film with an electrically conductive thin film specialty coating. This transparent conductive coating allows high transmission in the visible spectrum and

Contextual Info: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO

sd1272

Contextual Info: il i f m l G i W » W f S W m m G f f l I V f * * ^40 C o m m e rce Drive M o n tg o m e ry v ille , PA 18936-1013 Tei: 215} 631-9840 SD1272 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS • PM CLASS C TRANSISTOR • FREQUENCY 175M H *

Contextual Info: /IT SCS-THOMSON SD1390 * 7 # . raoœoiiUKSïiBOWs RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS PRELIMINARY DATA • ■ . ■ • ■ 470 MHZ 24 VOLTS P o u t = 1.5 W WITH 13.0 dB MIN. GAIN CLASS A COMMON EMITTER POWER SATURATION 2.2 W MIN. P IN C O N N E C T IO N

Contextual Info: m m m &FPr<t<$t&ra M ic m m s e m i 140 Commerce Drive Montgomeryvilte, PA 18938-1013 Tei: <215 631-9840 S D 1 4 0 0 - 2 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR F-R EOU cNC Y B75MH z VOLTAGE 24V POW ER O U I i- 14 .0 W

Contextual Info: S G S -T H O M S O N SD1490 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

Contextual Info: GENERAL INFORMATION ► EXPERIENCE Owing to its 40 years experience, its high level of quality and its constant effort in R & D, RADIALL has become the EUROPEAN ”N°1” in coaxial connectors. Supported by its position, RADIALL has excelled in passive microwave

Contextual Info: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH

L34 ferrite beads

Abstract: MAX3638 MAX3638ETM EXS00A J2-C12 Capacitor L33 BLM15HD102SN1 LQM21NN4R7K10 TAJB336K010R MAXIM MAX3638ETM
Contextual Info: 19-5270; Rev 1; 5/10 MAX3638 Evaluation Kit The MAX3638 evaluation kit EV kit is a fully assembled and tested demonstration board that simplifies evaluation of the MAX3638 low-jitter, wide-frequency range clock generator. The EV kit includes an on-board 25MHz

Contextual Info: 19-5270; Rev 1; 5/10 EVALUATION KIT AVAILABLE MAX3638 Evaluation Kit The MAX3638 evaluation kit EV kit is a fully assembled and tested demonstration board that simplifies evaluation of the MAX3638 low-jitter, wide-frequency range clock generator. The EV kit includes an on-board 25MHz

Contextual Info: a i GEC PLESSEY S I M I O \ I l ( JUNE 1992 PRELIMINARY INFORMATION I C) R S SP8835 3.56Hz * 4 FIXED MODULUS DIVIDER (Supersedes M ay 1991 Professional Product I.C. Handbook) The SP8832 is one of a range of very high speed low power prescalers for professional applications. The

alps vco

Abstract: MAX3639 BLM15HD102SN1 LQM21NN4R7K10 TAJB336K010R S1-S17 ferrite L8
Contextual Info: 19-5271; Rev 1; 5/10 MAX3639 Evaluation Kit The MAX3639 evaluation kit EV kit is a fully assembled and tested demonstration board that simplifies evaluation of the MAX3639 low-jitter, wide-frequency range, clock generator. The EV kit includes an on-board 25MHz

sharp microwave oven 250

Abstract: sharp SM5k1 SM5* sharp SM5K1 42-PIN 48-PIN SHARP SM5 00011110H 4-bit microcomputer piezo electric buzzer
Contextual Info: SM5K1 4-Bit Microcomputer Microcomputer Data Sheet FEATURES PIN CONNECTIONS • CMOS Process 42-PIN SDIP TOP VIEW • RAM Capacity – 64 x 4-bits Data RAM – 16 × 4-bits Display RAM P20 1 42 VDD P21 2 41 P11 P22 3 40 P12 • 51 Instruction Sets P23 4 39

Contextual Info: 19-5271; Rev 1; 5/10 EVALUATION KIT AVAILABLE MAX3639 Evaluation Kit The MAX3639 evaluation kit EV kit is a fully assembled and tested demonstration board that simplifies evaluation of the MAX3639 low-jitter, wide-frequency range, clock generator. The EV kit includes an on-board 25MHz

d7520

Abstract: d7520x PD75208 D75212 cg208 uPD7520x kbr 2.0 7 segment display duplex led type P216A kbr kyocera
Contextual Info: NEC Electronics Inc. Description The pPD7520x/7521x is a family of single-chip CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored interrupts, a FIP controller/driver, subsystem clock, and serial interface. The instruction set allows the user to manipulate RAM

LT746

Abstract: tdk fcr CG208 1S1211 JPD75P216A PD75CG208 400M-2
Contextual Info: N E C ELECTRONICS INC 3QE D NEC NEC Electronics Inc. Description The /iPD7520x/7521x is a family of single-chlp CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored interrupts, a FiP controller/driver, subsystem clock, and serial interface.

2N6266

Abstract: i7645 PE-1243 RCA transistor 17609 TUNABLE FILTER uhf i7649 RCA microwave oscillator C1f TRANSISTOR
Contextual Info: File No. 544 □aCBZTD P o w er T ransisto rs Solid State Division 2N 6266 5-W , 2 - G Hz, E m itte r-B a lla s te d Silicon N -P -N O verlay T ra n s is to r For U H F/M icrow ave Power Am plifiers, Microwave Fundamental-Frequency Oscillators and Frequency Multipliers

Contextual Info: MwT-S7 18 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • • m HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE 250 MICRON GATE WIDTH

MPS 808

Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

ap910401

Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology

NAND Flash Programmer with TSOP-48 adapter

Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
Contextual Info: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3