S72 MOS Search Results

s72 sot 23

Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Contextual Info: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA

ic s79 pin configuration diagram

Abstract: transistor s72 RC s72 .s79 28F320-TSOP s16 transistor S72 transistor transistor s07 LP62S4096-TSOP s47 general semiconductor
Contextual Info: King Billion Electronics Co., Ltd 駿 億 電 子 股 份 有 限 公 司 KD83 LCD Driver Series - Table of Contents 1. General Description 2. Features

transistor s72

Abstract: S72 transistor KD83 SEG22 SEG23 28F320-TSOP ic s79 pin configuration diagram V10910
Contextual Info: King Billion Electronics Co., Ltd 駿 億 電 子 股 份 有 限 公 司 KD83 LCD Driver Series - Table of Contents 1. General Description 2. Features

s72 sot 23

Abstract: S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 LT2N7002 Marking Code S72
Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

mosfet s72

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • • 0.103(2.60) • 0.056(1.40) 0.047(1.20) • 0.086(2.20) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.006(0.15)MIN. FEATURES 0.079(2.00) 0.008(0.20) 0.070(1.80)

Marking Code S72

Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

Marking Code S72

Contextual Info: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3

mosfet s72

Abstract: s72 sot 23 N mosfet sot-23 marking ND Marking Code S72 marking code S72 SOT23
Contextual Info: _2N7002 c p : G e n e r a l v S e m ic o n d u c t o r N-Channel Enhancement-Mode MOSFET % Vds 6 0 V RdS ON) 3 .0 Q Id 2 3 0 m A TO-236AB (SOT-23) .122 .110 m. 0.031 (0.8) JL .016 (0.4) H h Top V ie w -[p - 0.035(0.9) 0.079 (2.0) Pin Configuration

Marking Code S72

Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance

2N7002 marking code 72

Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)

S72 FET

Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)

LOG RX2

Abstract: M3601 A2S22 B-2607 A1S21 A1S11 PE4263 s44 sma transistor s72 log tx2
Contextual Info: Application Note AN20 Multi-Port Handset Switch S-Parameters Introduction Summary: High-power UltraCMOS switches are the nextgeneration solution for wireless handset power amplifiers and antenna switch modules. Most multi-throw switches combine high-power transmit

NLC322522T-4R7M

Abstract: caller id single chip mit4115 caller id teridian dtmf application notes 73M2901CE S110 TISP4350T3BJR 73M2901C NLC322522
Contextual Info: 73M2901CE V.22 bis Single Chip Modem A Maxim Integrated Products Brand APPLICATION NOTE AN_2901CE_003 JULY 2005 73M2901CE Caller ID Support The Teridian 73M2901CE integrated circuit modem provides all the microprocessor control and modulation and demodulation functions required to implement a V.22 bis 2400 bps modem. In addition, the 73M2901CE provides

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

S72 2n7002

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • Specially Designed for Battery Operated Systems, Solid-State Relays 0.103(2.60) • High Density Cell Design For Ultra Low On-Resistance 0.056(1.40)

PF0020

Abstract: PM4550C PU7456 TPM relay
Contextual Info: - 162 - f Ü € tt m € & m SS * * H 1 K I* YGS* V * ft M A (V) & * (X P d /P c h (A) * PF0015 H Ä 824— 849MHz PA MOS 12 DD 2 D PF0016 B aL 8 9 0 - 9 1 5 M H z PA MOS 12 DD 2 D PF0017 B aL 872— 905MHz PA MOS 12 DD 2 D PF0020 B aL 820— 850MHz PA

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • Specially Designed for Battery Operated Systems, Solid-State Relays 0.103(2.60) • High Density Cell Design For Ultra Low On-Resistance 0.056(1.40)

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

s72 mosfet

Abstract: 2N7002 MARKING s72
Contextual Info: MCC TM Micro Commercial Components Features
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0 • • • • • Advanced Trench Process Technology

S72 2n7002

Abstract: 2N7002 MARKING transistor marking s72 2N7002 transistor s72 2N7002 MARKING s72 s72 sot 23 s72 mosfet
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

s72 mosfet

Contextual Info: MCC TM Micro Commercial Components Features
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0 • • • • • Advanced Trench Process Technology