S8-A MARKING Search Results

J-STD-020A

Contextual Info: AH116 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Outline Drawing Product Information Product Marking The component will be marked with an “AH116-S8” designator with a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel

AH215

Abstract: J-STD-020A
Contextual Info: AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Outline Drawing Product Information Product Marking The component will be marked with an “AH215-S8” designator with a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel

J-STD-020A

Contextual Info: AH312 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Outline Drawing Product Information Product Marking The component will be marked with an “AH312-S8” designator with a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel

J-STD-020A

Contextual Info: AH115 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Outline Drawing Product Information Product Marking The component will be marked with an “AH115-S8” designator with a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel

S8 MARKING ON SOT23 PACKAGE

Abstract: Diode SOT-23 marking s8 DBS SOT23 MARKING CODE marking code js 3 pin diode diode MARKING CODE 930 diode 1504 JS marking diode marking s8 diode Js MARKING CODE SOT23 TA 1504
Contextual Info: BAT 15-04 Silicon Dual Schottky Diode ● ● ● DBS mixer applications to 12 GHz Low noise figure Low barrier type Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package BAT 15-04 Q62702-A504 A SOT-23 – C S8 Maximum Ratings Parameter

Contextual Info: DATASHEET 9 3 2 S8 9 0 C RD890 SYSTEM CLOCK FOR AMD-BASED SERVERS General Description Features/Benefits The 932S890C is a main clock synthesizer chip for SR5690/SR5670 AMD Servers. An SMBus interface allows full control of the device. • Spread Spectrum; EMI reduction

Contextual Info: r j uTECHNOLOGY n ^ A ß _ Dual Low Noise, m Precision, JFET Input O p Amps F€ ATUR€S DCSCRIPTIOn • 100% Tested Low Voltage Noise 6nV/VfizMax ■ S8 Package Standard Pinout ■Voltage Gain 1.2 Million Min ■ Offset Voltage 1.5mVMax ■ Offset Voltage Drift

Contextual Info: rr une/\ß am TECHNOLOGY D ual Low Noise, Precision, JFET In p u t O p A m ps F€flTUR€S DCSCRIPTIOfl • 100% Tested Low Voltage Noise 6nV/VHz Max ■ S8 Package Standard Pinout ■ Voltage Gain 1.2 Million Min ■ Offset Voltage 1.5mVMax ■ Offset Voltage Drift

LT1114N

Abstract: lt1112 design the instrumentation amplifier with bridge LT1112
Contextual Info: t T L i n t A C _ LT1112/LT1114 TECHNOLOGY Dual/Quad Low Power Precision, Picoamp Input Op Amps F€flTUR€S D C S C R IP T IO n • S8 Package - Standard Pinout ■ Offset Voltage - Prime Grade: 60|iV Max ■ Offset Voltage-Low Cost Grade

Contextual Info: SJ S8 3 0 2 7 0 I REV I ECN I APP'd " 6431 0 .3 6 3 WHITE MARKING 0.040" HIGH CHARACTER .077 +.005 -.010 0 .3 2 2 0 .2 4 2 TEST REQUIREMENT TEST METHOD MIL-STD-1344 SUPERSEDED BY EIA 364 OPERATING TEMP. - 65° TO + 125° C N/A CONTACT RESISTANCE .020 OHMS MAXIMUM

Contextual Info: HEWLETT-PACKARD/ CNPNTS blE D • 4 4 4 7 S8 4 0 D 0 R 4 b 3 ATS m HEW LETT PACKARD 655 nm Precision Optical Reflective Sensor Technical Data HEDS-1500 Features • Focused Emitter and Detector in a Single Package • 655 nm Visible Emitter • 0.178 mm 0.007 Resolution

DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Contextual Info: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7

Contextual Info: r r u r m TECHNOLOGY _LT1169 Dual Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p F€RTUR€S DCSCRIPTIOn • Input Bias Current, W arm ed Up: 20pA Max ■ 100% Tested Low Voltage Noise: 8nV/Vflz Max ■ S8 and N8 Package Standard Pinout

LT111A

Contextual Info: / T u n _ LT1112/LT1114 TECHNOLOGY Dual/Quad Low Power Precision, Picoamp Input Op Amps e / \ B K A T U IK S D € S C R IP T IO n • S8 Package - Standard Pinout ■ Offset Voltage - Prime Grade: 60nV Max ■ Offset Voltage-Low Cost Grade Including Surface Mount Dual/Quad : 75^V Max

Contextual Info: iß 19 T? L iim m fi3 TECHNOLOGY Dual Low Noise, Precision, JFET Input O p Am ps August 1993 D C S C M P T IO n F€ A T U R € S • 100% Tested Low Voltage Noise 6nV/VfizMax ■ S8 Package Standard Pinout ■ Voltage Gain ■ Offset Voltage ■ Offset Voltage Drift

Contextual Info: x. ^ ^ CERAMIC CHIP CAPACITORS CLASS 1 CEC 1.2.4.6.7.12 Modele norm alise/Standard m od el CEC 1 CEC 2 CEC 4 CEC 6 CEC 7 Option etamage/Tinned option E |C E |C E 1C E |C E 1C_ Conditionnement possible/ P ossible packaging vrac - S8 ou S12 voir page 13 bulk - SR or S I2 (see p a g e 13)

a1385

Abstract: 6 dip, op -ic
Contextual Info: i T L i n C A B _ L T l 1 1 2 / L T l 1 1 4 TECHNOLOGY Dual/Quad Low Power Precision, Picoamp Input Op Amps F€ flTU R € S D € S C R IP T IO n • S8 Package - Standard Pinout ■ Offset Voltage - Prime Grade: 60jxV Max ■ Offset Voltage - Low Cost Grade

MARKING 5bk

Abstract: IC OP AMP for Piezoelectric transducers
Contextual Info: u rm / * LT1113 TECHNOLOGY D u al Low Noise, Precision, JFET In p u t O p A m p s D C S C R IP T IO il F€ flTU R € S • 100% Tested Low Voltage Noise ■ S8 Package Standard Pinout 6nV/VHz Max ■ Voltage Gain ■ Offset Voltage ■ Offset Voltage Drift

Contextual Info: SEMICONDUCTOR KDS128E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S8 1 2 3 No. Item Marking Description Device Mark S8 KDS128E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

marking s8 diode

Abstract: RB751V-40
Contextual Info: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol

LINEAR MARKING

Abstract: 1446 1446l 1446li
Contextual Info: SPECIFICATION NOTICE LTC1446/LTC1446L June 1997 The part marking for the SO-8 package of the LTC 1446/LTC1446L in the commercial temperature range of 0°C to 70°C is 1446 and 1446L as shown below. The part marking in the industrial range of – 40°C to 85°C is 1446I and 1446LI. For complete specifications, typical

marking s8 diode

Abstract: s8 marking RB751V-40 MARKING CODE S8
Contextual Info: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol

FORDAHL Frequency Control Products

Abstract: OCXO S15 SMD 5 PIN CODE leg KEC DATE code marking s17 DFN MARKING 352 max 14803 KEC MARKING CODE kec smd marking S17 SMD MARKING CODE
Contextual Info: SURFACE MOUNT PRECISION OSCILLATOR DFN S1-KEC/KEG 5 V & DFN S1-LEC/LEG (3.3 V) 14.8±0.3 KEY FEATURES Marking: 5.08 ± 20 ppm/15 years stability available KEC/LEC version: 1.4 9.1±0.2 16 to 400 MHz 1 ps RMS jitter over 50 kHz to 80 MHz B.W. +0.1 -0.2 1.0

sg3524 PWM dc to dc boost regulator

Abstract: apple ccfl inverter dc 12v sg3524 PWM GENERATOR with mosfet switching regulator 12v 3A 1.5A 48v regulator ultra low power mosfet fast switching sg3524 battery charger SG3524 application notes speed control 400V voltage regulator 6V sot-223 smt voltage regulators
Contextual Info: SURFACE MOUNT PRODUCTS Introduction Linear Technology Corporation LTC was founded in 1981 to address the growing demand for high performance and superior quality linear integrated circuits. Today, LTC has successfully established a leadership position by introducing and supplying leading edge products in each of the industry’s basic functional groups —