S8201 Search Results

Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended

GD411C

Abstract: GD508C GD514B GD408C GD408D GD408E GD411A GD411B GD411D GD508AA
Contextual Info: - 272 B GD408C GD408D GD408E GD411A GD4L1B GD411C GD411D GD4UE GD508A GD508AA GD508B GD508C GD5Q8D GD508E GD511A GD511AA GD511B GD511C GD511D GD511E GD514A GD514AA GD514B GD514C GD514D GD514E GD518A GD518AA GD518B GD518C GD518D S3020 S3020A S8201 S8202 - &

TB164

Abstract: gP DIODE S8201 GP 015 DIODE 12W15
Contextual Info: T B - 1 6 4 S 8 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 2 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 1.5W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-164 S8201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=200ma

158A

Abstract: TB158A S8201 10NF 47PF 47UF C164 KS-8201
Contextual Info: R F in C15 2 .4 P F C16 4 .3 P F 2 2 A W G 1 in c h L8 HP C17 10NF 28Vdc, 400m a P 1 d B = 1 .5 W 1 0 0 -1 0 0 0 M h z T B -1 5 8 , S 8 2 0 1 D4 10M A R7 2 .2 K D6 10M A D5 7 .5 V C18 8 .2 P F R6 150 C24 10NF 22AW G 4 tu rn s R 9 2 .2 K S8201 L9 HP L10 HP

S8201

Abstract: TRANSISTOR S2A
Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

S8201

Abstract: VDMOS
Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TPCS8201

Abstract: S8201
Contextual Info: S8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II S8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

Si4164DY-T1-GE3

Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

SiR464DP

Abstract: sir464
Contextual Info: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

SiR466DP

Abstract: SiR466
Contextual Info: New Product SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards

SiR466DP

Contextual Info: New Product SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

pse jet THERMAL FUSE

Abstract: thyristor t600 160A Fuse bs88 curve SFC-FUSE-CAB 12ABCNA semiconductors cross index HKP-HH HRC fuse gG 35A 500V SOY-B HRC Fuse HOLDER 80A
Contextual Info: Product Catalog Circuit Protection Products Circuit Protection Index Index by Domestic Catalog Numbers Listed Numeric-Alpha Catalog Number Page 5.5VKNHA Amp R . . . . . . . . . . . . 102 E60C . . . . . . . . . . . . . . . . . . . . . . . . 72 LCL . . . . . . . . . . . . . . . . . . . . . . . . . 14

bussmann semiconductor fuse catalogue

Abstract: bs1362 BUSSMANN SFT Series HKP-HH fuses T2A 250V C520 A/D 1.5A, 125V, 32mm glass fuse IEC-127-4 HTC220M FUSE 3A 125V SMT
Contextual Info: Bussmann Table of Contents Fuse Holder Selection Chart 2 Surface Mount Fuses 3 Axial and Radial Leaded Fuses 8 5 x 15mm Fuses 12 5 x 20mm Fuses 18 6.3 x 32mm Fuses 36 Automotive Fuses 46 Miscellaneous Fuses 47 Fuse Clips for 5mm dia. Fuses 51 Fuse Clips for 6.3mm dia. Fuses

merlin gerin fuse

Abstract: IR 2544S MICRO FUSE-LINKS 1608 TYPE HRC fuse gg GEC MGI1252 THERMAL Fuse m20 tf 115 c smd marking 1pn ns 1000 n merlin gerin microtemp g4a01
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Si4164DY-T1-GE3

Abstract: si4164
Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

6554a

Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
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170M8554

Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

GD411C

Abstract: GD408C GD408D GD408E GD411A GD411B GD411D GD508AA GD508B GD508C
Contextual Info: - 272 B - * * ê fc & £ Vdc V GD408C GD408D GD408E GD411A GD4L1B GD411C GD411D GD4UE GD508A GD508AA GD508B GD508C GD5Q8D GD508E GD511A GD511AA GD511B GD511C GD511D GD511E GD514A GD514AA GD514B GD514C GD514D GD514E GD518A GD518AA GD518B GD518C GD518D S3020

ana 658 solar charge

Abstract: RD2004 for 4120 40A 14VDC relay pico fuse color code varistor 20sp Lucent SLC 96 cabinet MDM cooper bussmann semiconductor fuse catalogue MDQ 100a 600v bridge rectifier GBA 616
Contextual Info: Bussmann electrical full line catalog Leadership in Circuit Protection Introducing Bussmann by Eaton The protection you rely on. For more, visit Bussmann.com Leadership in Circuit Protection. The only company that can provide a complete circuit protection solution for all applications.