S8890 Search Results

S8890

Abstract: S8890-05 na40a S8890-02 S8890-10 Si apd photodiode S8890-30
Contextual Info: PHOTODIODE Si APD S8890シリーズ 近赤外域で高感度のAPD 特長 用途 l 高感度 l 高ゲイン l 低端子間容量 l YAGレーザの検出 l 長波長光の検出 • 一般定格／絶対最大定格 型名 S8890-02 S8890-05 S8890-10 S8890-15

Contextual Info: Si APD S8890シリーズ 近赤外域で高感度のAPD 特長 用途 高感度 YAGレーザの検出 長波長光の検出 高ゲイン 低端子間容量 構成／絶対最大定格 型名 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 外形寸法図/ 窓材*1

Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l YAG laser detection l Long wavelength light detection l High sensitivity l High gain l Low terminal capacitance • General ratings / Absolute maximum ratings Type No. Dimensional

S8890

Abstract: S8890-02 S8890-05 S8890-10
Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional

Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l YAG laser detection l Long wavelength light detection l High sensitivity l High gain l Low terminal capacitance • General ratings / Absolute maximum ratings Type No. Dimensional

Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional

Contextual Info: Si APD S8890 series Long wavelength type APD Features Applications High sensitivity YAG laser detection High gain Long wavelength light detection Low terminal capacitance Structure / Absolute maximum ratings Type no. S8890-02 S8890-05 S8890-10 S8890-15 S8890-30

S8890

Abstract: S8890-02 S8890-05 S8890-10
Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l YAG laser detection l Long wavelength light detection l High sensitivity l High gain l Low terminal capacitance • General ratings / Absolute maximum ratings Type No. Dimensional

Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional

S8890

Abstract: ami organ electronic organ transistor f8 pn sequence generator using transistor seven segment code transistor organ musical SYNTHESIZER schematic rhythm pattern generator
Contextual Info: AMI S8890 AMERICAN MICROSYSTEMS, INC.| RHYTHM GENERATOR Features General Description □ □ □ □ □ □ The rhythm generator is a counter-ROM specifically designed for electronic organ and other electronic in­ strum ents. This product contains an internal

1NA101

Abstract: S8890 APD S11519
Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

H10769A

Abstract: H10770A H7422
Contextual Info: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

Contextual Info: 赤外高感度 Si APD S11519シリーズ 近赤外高感度 MEMS構造を応用 当社は、フォトダイオードの裏面にMEMS構造を形成することによって、近赤外域で高感度を実現したSi検出器を開発しまし た。S11519シリーズは、近赤外域の感度を向上させたSi APDです。

74L47

Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

UAA 1006

Contextual Info: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2010 夏 vol.6 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月 代表取締役社長就任

SN76670

Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

R7600U-300

Abstract: MOST150 S11518
Contextual Info: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS