S9012 TO 92 Search Results

S9012H

Abstract: transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92
Contextual Info: MCC S9012 S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012H

Abstract: transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92
Contextual Info: MCC S9012 S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

transistor s9012

Abstract: s9012 transistor S9012
Contextual Info: S9012 S9012 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃

S9012H

Abstract: transistor s9012h S9012G S9012
Contextual Info: MCC S9012 S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Contextual Info: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012 to-92

Abstract: S9012H transistor s9012h
Contextual Info: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012H

Abstract: transistor s9012h S9012 to-92
Contextual Info: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

transistor s9012h

Abstract: S9012H S9012H TO-92
Contextual Info: MCC S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012

Abstract: S9012H
Contextual Info: MCC S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

s9013 transistor

Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

transistor s9012

Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR

transistor s9012

Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
Contextual Info: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO

S9013

Abstract: S9013 TO92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

transistor s9012

Abstract: S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

s9013 transistor

Abstract: S9013 transistor S9013 f-30MHz transistor s9012
Contextual Info: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage

S9012 TO92

Abstract: S9012
Contextual Info: S9012 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR PNP TO-92 1. EMITTER FEATURE Power dissipation 2. BASE 0.625 PCM: W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range

Contextual Info: S9012 PNP General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO

S9012

Abstract: S9012 data sheet S9012 equivalent transistor s9012 S9012 TO92 S9012 to-92 DATASHEET S9012 S9012 transistor Weitron
Contextual Info: S9012 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value

S9012

Abstract: IC 555
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR（PNP） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM: -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range

transistor s9012

Abstract: S9012
Contextual Info: S9012 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.5 A Collector-base voltage V (BR)CBO :-40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

LC 500-S

Abstract: SS9013 SS9012
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (lc=500m A) C om plem entary to S S9012 Excellent hpE linearity.