S9015 Search Results

transistor S9014

Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR

S9014M

Abstract: S9015M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9015 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.

2SC2786

Abstract: S9015LT1
Contextual Info: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25

S9015 TO92

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9015 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation. Collector-curr ent 0.1A

transistor s9015c

Abstract: S9015
Contextual Info: MCC TM Micro Commercial Components S9015-B S9015-C S9015-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR PNP 1.EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9014 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

S9014L

Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW

Contextual Info: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23

S9015

Contextual Info: M C X 1 TO-92 Plastic-Encapsuiate Transistors S9015 C T R A N S IS T O R P N P FEAT URES dissipation Pcm: 0 .4 5W (Tamb=25°C) Collector current IcM: -0.1 A Collector-base voltage V(BR)CBO: -50 V Operating and storage Junction temperature range Tj.Tstg: -55°C to + 150“C

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
Contextual Info: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

TRANSISTOR D400

Abstract: D400 transistor d400 e nt transistor d400 transistor d400 t f C200-600 s9014 equivalent transistor TO-92 S9015 transistor S9014
Contextual Info: S9014 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Application TO- 92 Collector Curre nt Ic=100mA Collector P owe r Dissipa tion P c=450mW Comple men tary to S9015 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value

Contextual Info: S9015 PNP General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO

transistor s9015C

Abstract: s9015
Contextual Info: MCC TM Micro Commercial Components S9015 S9015-B S9015-C S9015-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9015 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.45 W (Tamb=25℃) 3. COLLECTOR Collector current -0.1 A ICM: Collector-base voltage -50

S9015

Abstract: 2S9015 s9015 sot s9015 transistor s9015 SOT23 S9015 SOT-23
Contextual Info: S9015 PNP Silicon Low Frequency, Low Noise Amplifier Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370

S9015 SOT-23

Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

transistor SOT23 J6

Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

S9015

Abstract: s9015 equivalent S9015 TO92 Weitron
Contextual Info: S9015 PNP General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value -45 -50 -5.0

BCW60B

Abstract: BCW60BLT1 S9014LT1 S9015LT1
Contextual Info: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25

transistor TO-92 S9015

Abstract: S9015 equivalent s9015 transistor S9015 transistor S9015
Contextual Info: S9015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-92 Power dissipation o P CM :0.45 W (Tamb=25 C) Collector current I CM :-0.1 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

Contextual Info: tgr | « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity

s9015 SOT23 transistor

Abstract: S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9014. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9015 Pb Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION

Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range