SA135 Search Results

13842

Contextual Info: Surface Acoustic Wave Filter TOKO No. SA135YD-001 Preliminary 1. Dimensions 5.0 Unit: mm 7.0 Lot No. 1.0 1.27 4 3 5 6 2 7 1 8 9 10 Input Input Return Output: Output Return Grnd 9 10 4 5 1,2,3,6,7,8 0.8 1.8 MAX Part No. 1.60 Orientation Mark Tolerance: ± 0.2

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

SA-275

Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

FTA073

Contextual Info: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

4kw marking

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

TSOP-20 FOOTPRINT

Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

S29JL064H

Abstract: S29PL064J 29F400 flash
Contextual Info: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical

10001000XXX

Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

32 KB SRAM

Abstract: DS05-50208-1E SWITCH SA125
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash

4kw marking

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

32 KB SRAM

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash

DS05-20905-1E

Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be

SA158

Abstract: SA214 8adrr
Contextual Info: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed