SAF TRANSISTOR Search Results

SAF1005

Abstract: SAF1007 fpm 250 airflow SAF1025 SAF1006 Alarm Saf SAF transistor AIRSTREAM SAF1026 Warren GV
Contextual Info: SAF Series Air Velocity Switch The solid state SAF Series airflow switch assures dependable thermal control and protection for air cooled systems. The SAF Series advantages include: Š Š Š Š Š Š Š Can drive logic circuits, audible/optical alarms and magnetic relays

EN6101

Abstract: EN610-1
Contextual Info: Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 SAf/YO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed tplOOns typ . • High breakdown voltage (VCBo=l500V ). • High reliability (Adoption of HVP process).

transistor 800v

Abstract: 2SC3460 DD201 fll100
Contextual Info: O rdering num ber: EN 1594B 2SC3460 N0.1594B NPN Triple Diffused Planar Silicon Transistor SAfÊYO i 800V/6A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed t^: O.ljis typ. . Wide ASO. . Adoption of MBIT process.

2sc3074

Contextual Info: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)

2SA1244

Abstract: 2SC3074 toshiba 2sc3074
Contextual Info: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

stk ic 5.1 channel amplifier

Contextual Info: ¡Ordering number : EN4340A _ _ SAfÊYOl Thick Film Hybrid 1C STK400-050 AF Power Amplifier Split Power Supply (30W + 30W + 30W min, THD = 0.4%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available

2SC3303

Contextual Info: TO SH IBA 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3303 HIGH CURRENT SWITCHING APPLICATIONS • • Unit in mm Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 jus (Typ.)

R25F

Abstract: SAF-C165-L25M C165 SAB-C165-L25F SAB-C165-L25M SIEMENS T36
Contextual Info: Microcomputer Components 16-Bit CMOS Single-Chip Microcontroller 3 V Operation C165 Specification 01.96 Advance Information C165 Revision History: 01.96 3 Volt Specification Previous Releases: 07.95 Page Subjects changes since last revision 2 SAF-C165-L25M added.

smd transistor A6 3

Abstract: 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T b3 smd transistor
Contextual Info: ACTS245T Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended

4606 SMD

Abstract: AL 4606 SI 4606 HS1-5104ARH-T HS-5104ARH-T HS9-5104ARH-T DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS5104
Contextual Info: HS-5104ARH-T Data Sheet July 1999 Radiation Hardened Low Noise Quad Operational Amplifier Intersil‘s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow

Contextual Info: HCS373T July 1999 Data Sheet Radiation Hardened Octal Transparent Latch, Three-State Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

Contextual Info: HCTS373T Data Sheet July 1999 Radiation Hardened Octal Transparent Latch, Three-State Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

Contextual Info: Ordering number : EN3291 I SAfÊYO i FC 137 No.3291 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance F eatures • On-chip bias resistance (R1 = 4.7k£2) • Composite type with 2 transistors contained in the CP package currently in use, improving the

D44VH7

Abstract: d44vh10
Contextual Info: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are

smd transistor 2a3

Abstract: Transistor SMD Y1 y1 smd transistor smd transistor y1 smd transistor 2A1 y2 smd transistor transistor smd Y2 smd 1a2 diagram of ic 1a2 HCTS244KTR
Contextual Info: HCTS244T Data Sheet July 1999 Radiation Hardened Octal Buffer/Line Driver, Three-State Intersil‘s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow

5962R9861301TCC

Abstract: 5962R9861301TXC HS1-139RH-T HS-139RH-T HS9-139RH-T
Contextual Info: HS-139RH-T TM Data Sheet July 1999 Radiation Hardened Quad Voltage Comparator FN4646.1 Features • QML Qualified Per MIL-PRF-38535 Requirements Intersil’s Satellite Applications Flow TM SAF devices are fully tested and guaranteed to 100kRAD total dose. These

Contextual Info: CD4049UBT Data Sheet July 1999 File Number CMOS Hex Buffer/Converter Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

HCS373DTR

Abstract: HCS373KTR HCS373T
Contextual Info: HCS373T TM Data Sheet July 1999 Radiation Hardened Octal Transparent Latch, Three-State FN4617.1 Features • QML Class T, Per MIL-PRF-38535 Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML

5962R9861301TCC

Abstract: 5962R9861301TXC HS1-139RH-T HS-139RH-T HS9-139RH-T
Contextual Info: HS-139RH-T Data Sheet Radiation Hardened Quad Voltage Comparator July 1999 File Number 4646.1 Features • QML Qualified Per MIL-PRF-38535 Requirements Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML

smd R2N

Abstract: smd diode S1N 5962R9578201TCC 5962R9578201TXC HCS74DTR HCS74KTR HCS74T
Contextual Info: HCS74T Data Sheet July 1999 Radiation Hardened Dual-D Flip-Flop with Set and Reset Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

d143 T transistor

Abstract: transistor d143 5962R9581201QCC HI302
Contextual Info: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to

Contextual Info: CD4049UBT Semiconductor December 1998 Data Sheet File Number CMOS Hex Buffer/Converter Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

Contextual Info: HS-139RH-T January 1999 Data Sheet Radiation Hardened Quad Voltage Comparator File Number 4646 Features • QML Qualified Per MIL-PRF-38535 Requirements Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML