SAMSUNG 007 Search Results

32 inch TV samsung lcd Schematic

Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A

TP2788

Abstract: TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION

TP2801

Abstract: smd diode PG 303 ALC287 Q5 LED mx25l8005m2c-15g SS338A 52A3 bluetooth schematic d47 samsung schematic SAMSUNG ELECTRONICS BA41
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION

MSM 7227

Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
Contextual Info: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.

cmos bandgap reference 0.35u

Abstract: 8832M 8309 208M 416M S5N8943B VCXO 35.328MHz capacitor 39n k 63
Contextual Info: S5N8943B G.Lite ADSL Analog Front End IC Preliminary Information Revision 1.0 July 2000 SAMSUNG ELECTRONICS CONFIDENTIAL PROPRIETARY Copyright 1999-2000 Samsung Electronics, Inc. All Rights Reserved S5N8943B G.Lite ADSL Analog Front End IC Contents Page

8309

Abstract: 021F 416M S5N8951X S5N8951X01 138-kHz capacitor 39n k 63
Contextual Info: S5N8951X G.dmt ADSL Analog Front End IC Preliminary Information Revision 1.0 July 2000 SAMSUNG ELECTRONICS CONFIDENTIAL PROPRIETARY Copyright 1999-2000 Samsung Electronics, Inc. All Rights Reserved S5N8951X G.dmt ADSL Analog Front End IC Contents Page

samsung CMOS image sensor

Abstract: cmos image sensor 31.76 S5K* CMOS structure samsung smia 65 camera module 26-20D S5K2
Contextual Info: S5K2E1FX03 – 1/2.5 INCH QSXGA CMOS IMAGE SENSOR PRELIMINARY DATA SHEET REV 0.00 S5K2E1FX03_EVT2 (1/2.5” QSXGA CMOS Image Sensor ) Preliminary Data Sheet (Rev 0.00) SAMSUNG ELECTRONICS PROPRIETARY Copyright 2005 Samsung Electronics, Inc. All Rights Reserved

1E4H

Abstract: 1ebh 1FW 43 smd 1FW 43 transistor KS57C3108 1E6H
Contextual Info: KS57C3108 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3108 single-chip CMOS microcontroller has been designed for very high performance using Samsung’s newest 4-bit CPU core, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-14-digit LCD

equivalent PNP for BUZ 90

Abstract: KS57C5404 KS57P5404 SAM47
Contextual Info: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C5404/P5404 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C5404 single-chip CMOS microcontroller is designed for high-performance using Samsung’s newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .

Contextual Info: KMM366S404BTL PC66 SDRAM MODULE KMM366S404BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

memory samsung

Contextual Info: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

KM416C256AJ

Abstract: KMM532256AW MM5322
Contextual Info: KMM532256AW/WG Fast Page Mode 256KX32 DRAM SIMM Using 256Kx16 DRAM, 5V G E N E R A L D E S C R IP T IO N FEATURES The Samsung K M M 532256AW is a 256K bit x 32 • Performance Range: Dynamic RAM high density memory module. The Samsung K M M 532256A W consists of two C M OS

SMF-24000

Contextual Info: S M Samsung Microwave Semiconductor F "2 4 0 0 0 -100 -200 P O W O F O p t Ì lY 1 Ì Z C d G aA s FET 2-14 GHz Description Features The SMF-24000 is a 2400 im n-channel MESFET with 0.5 |xm gate length, utilizing Samsung Microwave’s power optimized P5 process. Ti/Pt/Au gate metallization and

PN2222A EQUIVALENT

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS2222A 14E D 0 0073 06 | 8 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

marking M42

Abstract: KSR1113 KSR2113
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSR2113 14E O I 7*11.4142 G 007133 T PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- Bias Resistor Built In • Switching circuit, Inverter, interface circuit Driver circuit • Built in bias Reslstor(R,=2.2Kf), R,=47Kfl)

Contextual Info: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage

KS57P2304

Abstract: KS57C2304 KS57C2302 SAM47 ks57p serial
Contextual Info: KS57C2302/C2304/P2304 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C2302/C2304 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .

ks57c0404

Abstract: multi frequency multi sound buzzers KS57C0408 KS57P0408 SAM47
Contextual Info: KS57C0404/C0408/P0408 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C0404/C0408 single-chip CMOS microcontroller has been designed for very high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .

ks57c0404

Abstract: KS57C0408 KS57P0408 SAM47
Contextual Info: KS57C0404/C0408/P0408 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C0404/C0408 single-chip CMOS microcontroller has been designed for very high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .

1FW 43 smd

Abstract: 1FW 43 transistor 1FW28 1FW 46 1FW 96 1FW transistor 0004H KS57C2102 BSC23 ksr1
Contextual Info: KS57C2102 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C2102 single-chip CMOS microcontroller is designed for high-performance using Samsung's advanced modular development approach, SAM4 Samsung Arrangeable 4-bit Microcontrollers .Pull-up resistors are

BSC23

Abstract: fc3h fc1h
Contextual Info: KS57C2102 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2102 single-chip CMOS microcontroller is designed for high-performance using Samsung's advanced modular development approach, SAM4 Samsung Arrangeable 4-bit Microcontrollers .Pull-up resistors are

KFG1G16Q2A

Abstract: 63FBGA onenand 4GB MLC NAND
Contextual Info: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) FLASH MEMORY KFG1G16Q2A KFH2G16Q2A KFW4G16Q2A 1Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features