SAMSUNG IROM Search Results

s3c2450

Abstract: sdr sdram pcb layout guidelines s3c245 S3C2450X s3c2443 arm920t s3c2450 samsung arm920t s3c2450 S3C2443X SAMSUNG DATASHEET CHIP CAPACITOR samsung confidential
Contextual Info: Circuit Design CheckList S3C2450 RISC Microprocessor August 27, 2008 REV 0.3 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved S3C2450 CIRCUIT DESIGN CHECKLIST REV 0.3 Important Notice

s3c2416

Abstract: S3C2416X samsung s3c2416 s3c2416 irom eeprom 2416 wp S3C2443X s3c2443 R315 crystal samsung 2416 sdr sdram pcb layout guidelines
Contextual Info: Circuit Design CheckList S3C2416X RISC Microprocessor August 01, 2008 REV 0.2 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved S3C2416 CIRCUIT DESIGN CHECKLIST REV 0.2 Important Notice

S3C2450

Abstract: ARM926EJ s3c2450 S3C2443 s3c245 s3c2443 datasheet samsung bluetooth 13x13 65nm sources ARM9 400mhz S3C24X
Contextual Info: Samsung S3C2450 Mobile Processor RICH FEATURE SET AT LESS COST FOR PERSONAL NAVIGATION DEVICES AND OTHER HANDHELDS The 65nm S3C2450 is the new generation of Samsung’s popular S3C24xx series, offering pin-to-pin compatibility along with a wealth of new features that were

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM536B100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368100A1 consists of sixteen CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung

Contextual Info: DRAM MODULE 16 Mega Byte KMM5324000AKV/AKVG Fast Page Mode 4M x32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM5324000AKV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AKV consists of eight CMOS

KM416C1000AJ

Contextual Info: DRAM MODULE 4 Mega Byte KMM5321OOOAW/AWG Fast Page Mode 1Mx32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321000AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000AW consists of two CMOS

km44c4100ak

Contextual Info: DRAM MODULE 16 Mega Byte KMM53241OOAKV/AKVG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM5324100AKV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100AKV consists of eight CMOS

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb*4142 001003b S Ë3SÎ1GK KM41C1000BL CMOS DRAM 1MX1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000BL is a C M O S high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

44C4100

Abstract: 44C4100AJ
Contextual Info: DRAM MODULE 16 Mega Byte KMM53941OOAM Fast Page Mode 4Mx39 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G ENERA L D ESCRIPTIO N FEATURES The Samsung KMM5394100AM is a 4M bit x 39 Dynamic RAM high density memory module. The Samsung KMM5394100AM consists of ten CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364000AKH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package G ENERA L DESCRIPTIO N FEATURES The Samsung KMM5364000AKH is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364000AKH consists of nine CMOS

km44c1003cj

Contextual Info: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368003AK/AG Fast Page Mode 8Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368003AK is a 8M bit x 36 Dynamic HAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung

Contextual Info: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5324000AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AV consists of eight CMOS

Contextual Info: DRAM MODULE 32 Mega Byte KMM5398000AKM Fast Page Mode 8M x39 DRAM SIM M , 4K Refresh , 5V Using 16 M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N The Samsung KMM5398000AKM is a 6M bit x 39 Dynamic HAM high density memory module. The Samsung KMM5398000AKM consists of twenty

KM41C4000CJ

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS

KM44C4000AK

Abstract: 4Mx4 DRAM
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AK/AKG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5328000AK is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328000AK consists of sixteen

KMM591000B7

Abstract: KMM591000B-7 KMM591000B6 KMM591000B
Contextual Info: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs

cvbs to TS converter ic

Abstract: ctbc 489 ntsc genlock locked loop
Contextual Info: PRELIMINARY KS0116 MULTIMEDIA VIDEO GENLOCK DIGITIZER The KS0116 is a complete single chip genlock digitizer tor NTSC video input. Using SAMSUNG’S advanced CMOS technology the KS0116 GENLOCK implements standard analog functions associated with the front end

Contextual Info: KMM364V213AJ/AT Fast Page Mode 2Mx64 DRAM DIMM Based on 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V213A is a 2M bit x 64 Dynamic RAM high density memory module • Part Identification The - KMM364V213AJ 2048 cycles/32ms Ref. 400mil SOJ

iaa 180

Contextual Info: DRAM MODULE 32 Mega Byte KMM53681OOAH Fast Page Mode 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AH is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range1

Contextual Info: DRAM MODULE / 16 Mega Byte 1 - KMM53941OOAM Fast Page Mode 4Mx39 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5394100AM is a 4M bit x 39

k3525

Abstract: km41c4100
Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AK is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range: