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    SAMSUNG MCP RELIABILITY Search Results

    SAMSUNG MCP RELIABILITY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0805HT-8N2TKSC Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    H0402CS-27NXGLW Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    WB1-1TSSD Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    0402CS-36NXJAW Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    WB1-1TSSB Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy

    SAMSUNG MCP RELIABILITY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    SAMSUNG MCP

    Abstract: 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130
    Text: KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00S003M-D411 256Mb 107-Ball 80x13 SAMSUNG MCP 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130

    MCP 1Gb nand 512mb dram 130

    Abstract: SAMSUNG MCP MCP 67 MV- A2 137FBGA KBE00S009M KBE00S009M-D411 UtRAM Density
    Text: KBE00S009M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00S009M-D411 256Mb 137-Ball 80x14 MCP 1Gb nand 512mb dram 130 SAMSUNG MCP MCP 67 MV- A2 137FBGA KBE00S009M KBE00S009M-D411 UtRAM Density

    nand flash 512M

    Abstract: K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report
    Text: Target MCP MEMORY K5D1G13KCM-D075 MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K5D1G13KCM-D075 512Mb 119-Ball nand flash 512M K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report

    MCP 67 MV- A2

    Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
    Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K5D1G13ACD-D075 512Mb K5D1G13ACD-D075000 SG2002063-01 MCP 67 MV- A2 K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a

    NAND FLASH DDP

    Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
    Text: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00F005A-D411 512Mb 256Mb 137-Ball 80x14 NAND FLASH DDP SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density

    qualcomm nand

    Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00500AM-D437 512Mb KBE00500AM-D437 SG2002063-01 qualcomm nand SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor

    KBY00

    Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
    Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF KBY00U00VA-B450 A10/AP KBY00 LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D

    kbe00f003m

    Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
    Text: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00G003M-D411 NNDD512512256256BBFF 512Mb 256Mb 107-Ball 80x13 kbe00f003m SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130

    153-FBGA

    Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
    Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K522H1HACF-B050 A10/AP 153-FBGA 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp

    MCP 256M nand samsung mobile DDR

    Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
    Text: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF KA100O015E-BJTT A10/AP MCP 256M nand samsung mobile DDR MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp

    movinand emmc

    Abstract: samsung emmc lpddr2 moviNAND samsung eMMC 5.0 eMMC samsung emmc tlc samsung* lpddr2* pop package samsung lpddr2 SAMSUNG CL10
    Text: When Less Is More: Bigger & Faster Memory in Shrinking Packages for the Mobile Market Kathy Choe Thomas, Flash Product Mktg Samsung Semiconductor, Inc. Living in the Connected World Like it or Not, We Are Connected Anytime, Anywhere Cloud Services Bio Mobile


    Original     		PDF

    SAMSUNG MCP

    Abstract: K5S3216Y0A 69TBGA CS2S K5S3216Y0A-T385
    Text: Preliminary MCP UtRAM+SRAM K5S3216Y0A Document Title Multi-Chip Package Memory 32M Bit (2Mx16 bit) Uni-Transistor RAM / 16M(1Mx16 bit) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft - Design target August 2, 2001


    Original     		PDF K5S3216Y0A 2Mx16 1Mx16 100uA LIM-011025 SAMSUNG MCP K5S3216Y0A 69TBGA CS2S K5S3216Y0A-T385

    SAMSUNG MCP

    Abstract: MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp
    Text: Preliminary MCP MEMORY KAJ000A30M Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 12, 2003 Preliminary 0.1 Revised


    Original     		PDF KAJ000A30M 4Mx16) 512Kx16) 111-Ball SAMSUNG MCP MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
    Text: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF


    Original     		PDF KAE00C400M 16Mx8) 4Mx16) 111-Ball SAMSUNG MCP samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR

    SAMSUNG MCP

    Abstract: MCP NAND
    Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die


    Original     		PDF K5P2881BCM 16Mx8) 512Kx16) 69-Ball SAMSUNG MCP MCP NAND

    SAMSUNG MCp

    Abstract: samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability
    Text: Preliminary MCP MEMORY K5P5781FCM Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. April 18, 2003 Preliminary 0.1 Revised


    Original     		PDF K5P5781FCM 16Mx16) 512Kx16) 100pF 10nsCC 69-Ball SAMSUNG MCp samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report

    samsung roadmap

    Abstract: USB Flash Memory SAMSUNG SAMSUNG MCp nand Samsung Nand gb MCP Technology Trend SAMSUNG NAND FLASH NAND flash differences NAND Reliability note MCP NAND, DRAM, NOR Samsung MCP
    Text: Selecting the Right FLASH Partner to Turn Technology Advantages into Profits A Position Paper by Samsung Semiconductor, Inc. 2003 Samsung Semiconductor, Inc. SAMSUNG SEMICONDUCTOR, INC. POSITION PAPER Introduction Since FLASH memory was first introduced, the unique ability to have cost effective, nonvolatile memory has spawned a revolution in consumer and industrial products. Cellular


    Original     		PDF CG2020-A samsung roadmap USB Flash Memory SAMSUNG SAMSUNG MCp nand Samsung Nand gb MCP Technology Trend SAMSUNG NAND FLASH NAND flash differences NAND Reliability note MCP NAND, DRAM, NOR Samsung MCP

    MCP 67 MV- A2

    Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
    Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1


    Original     		PDF KAA00B209M-TGxx 16Mx16) Flash/32M 2Mx16) UtRAM/128M 2Mx16x4Banks) 127-Ball 80x12 08MAX MCP 67 MV- A2 SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand