SAMSUNG TANTAL Search Results

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS0J107KBAR • User Part No : • Description : CAP,TANTAL,100㎌,6.3V,±10%,3528-19 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ②

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A476MAAR • User Part No : • Description : CAP,TANTAL,47㎌,10V,±20%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS0J336MPAR • User Part No : • Description : CAP,TANTAL,33㎌,6.3V,±20%,2012-12 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1E155KAAR • User Part No : • Description : CAP,TANTAL,1.5㎌,25V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCE0J476MAAR1000 • User Part No : • Description : CAP,TANTAL,47㎌,6.3V,±20%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ②

TCSCS1A475KAAR

Abstract: TCSCS1A475
Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A475KAAR • User Part No : • Description : CAP,TANTAL,4.7㎌,10V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

TCSCS1A106K

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A106KAAR • User Part No : • Description : CAP,TANTAL,10㎌,10V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

Samsung Tantalum Capacitor

Abstract: TCSCN1C105KAAR
Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCN1C105KAAR • User Part No : • Description : CAP,TANTAL,1㎌,16V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1V475KCAR • User Part No : • Description : CAP,TANTAL,4.7㎌,35V,±10%,6032-25 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③

THSCM1C105MKAR

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : THSCM1C105MKAR • User Part No : • Description : CAP,TANTAL,1㎌,16V,±20%,1608-09 • Date : Aug 23, 2013 1. Samsung Part Number TH ① SCM ② Tantalum Capacitor

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSHS0J226MPAR • User Part No : • Description : CAP,TANTAL,22㎌,6.3V,±20%,2012-12 • Last Revision Date :December.28.2009 • Date :November 16. 2009

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSHS0G476MAAR • User Part No : • Description : CAP,TANTAL,47㎌,4V,±20%,3216-16 • Last Revision Date :December.28.2009 • Date :January 05 .2010

Contextual Info: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCE1D226MCAR0400 • User Part No : • Description : CAP,TANTAL,22㎌,20V,±20%,6032-25 • Last Revision Date :December.28.2009 • Date :Feb 14. 2006

SAMSUNG VFD

Abstract: Samsung Tantalum Capacitor IN5819 diode IRF9540 application Buck Circuit S3F84A5 VLF12060 S3F84P4 IN5819 VISHAY BD1 VFD module
Contextual Info: APPLICATION NOTE S3F84A5 An LED Lighting System January 2010 Revision 0.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2010 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

Contextual Info: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

KM41C1000CLP

Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
Contextual Info: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

Contextual Info: June 2010 RoHs+Halogen Compliant_ _ J ' ’B W4 & •« € co p arts SOLID TANTALUM CAPACITORS SAMSUNG ELECTRO-MECHANICS

30b1 diode

Abstract: ntc 10d-7 DIODE G7.9 27B2 diode 45x1 diode M30 c300 811324 q515 11F4 smd diode f4 4d
Contextual Info: This Document can not be used without Samsung’s authorization. 5 Schematic Diagrams and PCB Silkscreen 5-1 MAIN BOARD 5-1-1 Schematic Diagrams M30 5-1 5 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • TTbHlMS DD1SSSL 3bT KM44C258C SHGK CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its de­

km44c256c

Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Contextual Info: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

DG113

Abstract: Samsung Capacitor sse samsung pram
Contextual Info: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC 7Tb4142 0015445 33T • SNGK b7E D CMOS DRAM KM41C1002C 1,048,576x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002C is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­