SB570 Search Results

Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Cj135

Abstract: SB5100 SB570 SB580 SB590 SB590-SB5100
Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Cj135

Abstract: SB5100 SB570 SB580 SB590 SB590-SB5100
Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Contextual Info: SB570 - SB5100 NEW PRODUCT 5.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

CJ135

Abstract: SB5100 SB570 SB580 SB590 SB590-SB5100
Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Contextual Info: SB570 -SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features • Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak

SB5100

Abstract: SB570 SB570-B SB580 SB590 DS30135
Contextual Info: SB570 - SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection · · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant Note 2 High Surge Capability B A A High Current Capability

SB5100

Abstract: SB570 SB580 SB590
Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

Contextual Info: LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

SB5100

Abstract: SB570 SB580 SB590
Contextual Info: SB570 - SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability Surge Overload Rating to 150A Peak For Use in Low Voltage, High Frequency

Contextual Info: SB570 - SB5100 NEW PRODUCT 5.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability Surge Overload Rating to 150A Peak For Use in Low Voltage, High Frequency

Contextual Info: NEW PRODUCT SB570 - SB5100 5.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

DS30135

Contextual Info: SB570 - SB5100 NEW PRODUCT 5.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: Schottky barrier rectifiers. 2.5 Amps, to 5 Amps. The plastic material carries U/L recognition 94V O. Maximum Average Forward Rectified TYPE Current If avi @ T l Axial Lead | S.M.D. (A | ( °C) Max.Recurrent Repetitive Reverse Peak Forward Voltage Current

SB5100

Abstract: SB520 SB540 SB560 SB580
Contextual Info: SB520 THRU SB5100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 5.0 Ampere FEATURES ● ● ● ● ● DO-201AD The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free

c945 p 331 transistor

Abstract: Compal LA-2371 la2371 KB910 B4 SMD Transistor Y23 Compal Electronics a4 9 smt APW7057 la-2371 U39b
Contextual Info: A B C D E 1 1 LONGBEACH 10/20 LA-2371 REV 1.0 Schematic 2 2 Portability Prescott/Northwood 3 3 RC300ML RX300ML +IXP150+ATI M11P(128MB VRAM) 2004-07-23 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

foxconn

Abstract: Y27 sot23 zener FW82801FBM Mobile Dothan alviso-GM Socket AM2 Compal Electronics LA-2592 APW7057 ls-2597
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Dothan uFCPGA with Intel Alviso_GM+ICH6-M core logic 2005-04-10 3 3 LA-2592 REV:3A 4 4 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: SB520 - SB5B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 5.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop