SBD20 Search Results

SBD20C

Abstract: SBD20C100F SBD20C100T 20A100V 2203L
Contextual Info: SBD20C100T/F 20A100V肖特基整流管 描述 SBD20C100T/F是采用硅外延工艺制作而成的肖特基 整流二极管，广泛应用于开关电源、保护电路等各类电子 线路中。 特点 ∗ 具有过压保护的保护环结构 ∗ 高电流冲击能力

Contextual Info: MOSPEC SBD2030CT thru SBD2045CT SCHOTTKY BARRIER RECTIFIERS

SBD20C45F

Abstract: SBD20C SBD20C45T SBD20C45 20A45V 20a45
Contextual Info: SBD20C45T/F 20A45V肖特基整流管 描述 SBD20C45T/F是采用硅外延工艺制作而成的肖特基整 流二极管，保护环结构可以起到过压保护的作用，并且可 以提高产品的可靠性。 产品广泛应用于开关电源、极性保护电路等各类电子

20A60V

Abstract: SBD20C SBD20C60T SBD20C60F IF10-IF10
Contextual Info: SBD20C60T/F 20A60V肖特基整流管 描述 SBD20C60T/F是采用硅外延工艺制作而成的肖特基整 流二极管，保护环结构可以起到过压保护的作用，并且可 以提高产品的可靠性。 产品广泛应用于开关电源、极性保护电路等各类电子

SBD20C

Abstract: IF20 20A40
Contextual Info: SBD20C40T/F 20A40V肖特基整流管 描述 SBD20C40T/F是采用硅外延工艺制作而成的肖特基整 流二极管，保护环结构可以起到过压保护的作用，并且可 以提高产品的可靠性。 产品广泛应用于开关电源、极性保护电路等各类电子

S1630T-S1645T

Abstract: 1640CT 2035CT 2040CT SBD2030CT SBD2045CT 1645CT
Contextual Info: MOSPEC SBD2030CT thru SBD2045CT SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have

jc 540

Abstract: 1000F660 SBD2030CT SBD2045CT 5-20T S2030T-S2045T
Contextual Info: Æ&m o s p e c SBD2030CT thru SBD2045CT SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier.employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices

SBD20C150F

Abstract: TO220-3L SBD20C150T SBD20C TO-220F-3L SBD20C150 TO220F-3L TO-220-3L 20A150V 20A150
Contextual Info: SBD20C150T/F 20A150V肖特基整流管 描述 SBD20C150T/F是采用硅外延工艺制作而成的肖特基 整流二极管，广泛应用于开关电源、保护电路等各类电子 线路中。 特点 ∗ 具有过压保护的保护环结构 ∗ 高电流冲击能力

Contextual Info: MOSPEC SBD2030CT thru SBD2045CT SWITCH MODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have

ST "FIBRE OPTIC" CONNECTOR

Contextual Info: FIBER OPTIC TECHNOLOGY CALIBRATION LABORATORY OPTOKON HMA patchcord Description: The OPTOKON HMA optical modules are designed for connection of the nodes of tactical network by the help of cables with optical fibers. The used „Expanded beam technology“ preservers all

SUN HOLD ras 0910

Abstract: L64845 fbc 337 POLYGON TEC L64852 sun microsystem microprocessor assembly bresenham algorithms L64853A L64853
Contextual Info: LSI LOGIC 5304004 001E01Ô Û01 E l LLC L64845 SGX SBus Graphics Accelerator Technical Manual fé '' •j// M £ J $ á S ' / J A ' & *' .à ' ÿ ^ :V k Jf $ ’ O fi t s 4: 'I F/Ts } ■ £ MS71-000113-99 A \ E3 S304AD4 D D lSO n 74fl E 3 L L C This document is preliminary. As such, it contains data derived from func­

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

SBD15

Abstract: sbd26 TNETA1500 TNETA1560 CMD21 sarcon
Contextual Info: TNETA1560 ATM SEGMENTATION AND REASSEMBLY DEVICE WITH SBUS HOST INTERFACE SDNS010C – JANUARY 1994 – REVISED OCTOBER 1995 D D D D D D D SBus Device That Provides Asynchronous Transfer-Mode Interface Single-Chip Segmentation and Reassembly SAR for Full-Duplex ATM AdaptationLayer (AAL) Processing

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

sbd10c

Abstract: ess sabre GW18 bi direction ring counter ic
Contextual Info: TNETA1 560 ATM SEGMENTATION AND REASSEMBLY DEVICE WITH SB US HOST INTERFACE SDNS010C-JANUARY 1 9 9 4 - REVISED OCTOBER 1995 SBus Device That Provides A synchronous Explicit Cell-Level Interleaving Between Transfer-M ode Interface G ro up s of VCs S ing le -C hip S eg m e n ta t i o n and R e a s s e m b l y