SC-93 JEDEC Search Results

1SS193

Contextual Info: TOSHIBA 1SS193 1 S S 1 93 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 2.5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : V f 3 = 0.9V (Typ.)

Contextual Info: TO SHIBA 1SS193 1 S S 1 93 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.9V (Typ.)

Contextual Info: RE VISI ONS L TR D E SC R IP T IO N E .C .N . A RELEASE TO DOCUMENT CONTROL 10116 BY/AFT3 ' D DATE ?1/05/93 TL/ftH-P 0.30 ± 0.10 TYP 32.0 ±0.4 TYP 0.65 ± 0.10 TYP SEE DETAIL A 0 * - 12 * 0.15 ± 0.03 TYP TYPICAL DIMENSIONS ARE IN MILLIMETERS APPROVALS NOTES: UNLESS OTHERWISE SPECIFIED

Contextual Info: PRELIMINARY MT4LC4M4A1/B1 S 4 MEG X 4 DRAM 4 MEG x 4 DRAM DRAM 3.3V FAST-PAGE-MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • JEDEC and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process

MT42C8128

Abstract: MT42C8128DJ MT42C8128DJ-7
Contextual Info: MT42C8128 128K X 8 VRAM M IC R O N VRAM 128Kx8 DRAM WITH 256 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, timing and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply

MT42C4256

Abstract: micron DRAM
Contextual Info: MT42C4256 256K X 4 VRAM MICRON VRAM 256K X 4 DRAM WITH 512x4 SAM • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply PIN ASSIGNMENT (Top View • In p u ts a n d o u tp u t s a r e fu lly l l ' L c o m p a tib le

sc 8256

Abstract: Harris+8256
Contextual Info: M T42C 8256 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 X 8 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)

Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED 1. ALL EXPOSED METAL AND METAL IZED AREAS TO BE GOLD PLATED 60 MICROINCHES/ 1.5 MICROMETERS MINIMUM OVER NICKEL PLATED. 2. NO JEDEC REGISTRATION AS OF 09-17-91. R E V I S I O N S LTR D E S C R IP T IO N 08832 CONTROLLING DIMENSION:

MT42C8257

Contextual Info: MT42C8257 256K X 8 VRAM I^IICRON FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation) • Fully I'l'L and CM O S compatible inputs and TTL

MT42C8256

Abstract: sc 8256
Contextual Info: M T42C8256 256K X 8 VRAM |U1I C R O N 256K X 8 DRAM WITH 512 X 8 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, timing and functions • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)

CY7C1335

Abstract: CY7C1336 DO30 3Tg 21
Contextual Info: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout

MT42C256K16A

Contextual Info: ADVANCE M T42C256K16A1 256K X 16 VRAM | U |IC R O N 256K x 16 DRAM WITH 512x16 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)

Contextual Info: R E V I S I O N S LTR D E SC R IP TIO N E .C .N . A R E L E A S E TO DO C U M EN T C O N T R O L REV COPLANARITYs DEL STANDOFF DIM . DEL LEAD S FROM BACK VIEW. ADD ST A N D -O F F D IM & NOTE 5. STAND-OFF mm DIM WAS [ 0 . 0 0 - 0 . 1 5 ] : NOTE 5: ADD mm VALUE.

2SC76

Abstract: 2n1781 2n725 L51A T03A 2SC175 2SC176 2SC177 2SC73 2SC75
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

3T202

Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MT42C256K16A

Abstract: MT42C256
Contextual Info: ADVANCE MT42C256K16A1 256K X 16 VRAM M IC R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM PIN ASSIGNMENT T o d View • In d u s try -s ta n d a rd p in o u t, tim in g a n d fu n ctio n s • H ig h -p e rfo rm a n c e , C M O S silicon-gate p ro cess • Single +5V ±10% p o w e r s u p p ly

Contextual Info: HITACHI 2SA893, 2SA893A SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SC1890/A £ 1 * I , p ja = = z ± z 1 1. JimHter 2. C o lle c to r Î Et*sc tDiroemion» m mm {JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS Item Sym bol

transistor 2SC114 replacement

Abstract: 2SC114 transistor usaf516es047m 2SC114 usaf517es060m transistor 2SC114 BC175 transistor usaf516es048m 2sc107 usaf517es060
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2n2886

Abstract: ST6574 2SC38 BC226 2sc5250 transistor 2SC1381 2SC511R BF140 250M 2SC111
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2sc180

Abstract: 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

a197

Abstract: BFS57P 2n1763 2n725 BC130C bf220 BSW33 J460 L51A T03A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

ST162t

Abstract: SA1000 2S711 SE6020A SE6020 T05 Package transistor t05 BC412 TC236 NS435
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

42c8128

Contextual Info: MT42C8128 128K X 8 VRAM M IC R O N VRAM 128K X 8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply