ad 303 transistor
Abstract: No abstract text available
Text: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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BUV298AV
SC04830
ad 303 transistor
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BUF298F
Abstract: BUF298V 3641B
Text: 3QE rz 7 ^ 7# D • QÜ3D33Ô 7 S C S -T H O M S O N K œ iL lû lM K S s G S TH0MS0N 3 U F 2 9 8 F BUF298V 'T -'S s^S NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE 2500V RMS
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0Q3033Ã
3UF298F
BUF298V
BUF298F
SC04830
T-91-20
O-240)
BUF298F
3641B
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BUT30
Abstract: No abstract text available
Text: SGS-THOMSON BUT30V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE > VERY LOW Rih JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ISOLATED CASE 2500V RMS . EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE 4 INDUSTRIAL APPLICATIONS:
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BUT30V
SC04830
BUT30
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