SC59-5 PACKAGE Search Results

MC74VHC1GT125DFT1

Abstract: MC74VHC1G50DFT1 CMOS TTL Logic Family Specifications level shifter . CMOS to TTL MC74VHC1GT50DFT1 MC74VHC1GT08DFT1 MC74VHC1GT86DFT1 DATA SHEET transistor sc 308 ttl buffer MC74VHC1GT00DFT1
Contextual Info: NPFS1GATE/D Rev. 2, Mar-2000 New Product Fact Sheet CMOS One-Gate Logic Family Overview The MC74VHC1GXXXDFT1 CMOS One-Gate logic devices, are single gate solutions derived from a multi-gate standard logic function. They are packaged in tiny 5-pin both the standard SOT-23/SC59 package

SOT23-5 marking 016

Abstract: A114 A115 MC74VHC1GT02
Contextual Info: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M

Contextual Info: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M

transistor 2061

Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Contextual Info: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

2SC5094

Abstract: Low Noise uhf transistor
Contextual Info: 2SC5094 NPN 10 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 3 1 1 BASE FEATURES High power gain Low noise figure High DC current gain SC-59 package 2 2 SC-59 EMITTER Applieation: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC)

Contextual Info: 2SC5094 NPN 10 GHz RF Wideband Transistor COLLECTOR 3 3 P b Lead Pb -Free 2 2 BASE 1 FEATURES High power gain Low noise figure High DC current gain SC-59 package 1 EMITTER SC-59 Applieation: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC)

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

SMD MARKING CODE KL3

Abstract: SMD LD3 KL3 SMD diode KL3 SMD DIODE smd marking code KL3 smd transistor marking ld3 kl3 59 marking ld3 RB706D RB705D
Contextual Info: Formosa MS SMD Schottky Barrier Diode RB705D / RB706D List List. 1 Package outline. 2

RB495D

Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB495D List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB490D / RB491D List List. 1 Package outline. 2

SMD MARKING CODE KL3

Abstract: KL3 SMD diode DIODE smd marking code KL3 KL3 SMD LV3 smd 125OC RB421D RB425D
Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB421D / RB425D List List. 1 Package outline. 2

M1MA152AT1

Contextual Info: MOTOROLA Order this document by M1MA151AT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is

MIL-STD-19

Abstract: RB411D smd diode B4 MIL-STD750 RB400D smd diode code B4 RB-411D MIL-STD750D
Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB400D / RB411D List List. 1 Package outline. 2

125OC

Abstract: RB420D
Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB420D List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB400D / RB411D List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode RB420D List List. 1 Package outline. 2

CHT5946GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT5946GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 50Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-59/SOT-346 FEATURE * Surface mount package. SC-59/SOT-346

tvs diode marking code fo

Abstract: 3.3V TVS S I units SC59 SMD05 SMD12 SMD36
Contextual Info: SMD03 THRU SMD36 300W TVS DIODE Elektronische Bauelemente RoHS Compliant Product FEATURES A •SC59 package for surface mount appllcation •Protects 3.3V up through 36V components •Protects two unidirectional line or one bidirection line •Provides electrically is olated protection

SMD15C

Abstract: TVS m05 marking code m15 SMD36C SMD03C SMD05C SC59 M15 SOT-23 marking code M05
Contextual Info: SMD03C THRU SMD36C 300W TVS DIODE ARRAY Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES •SC59 package for surface mount appllcation •Protects 3.3V up through 36V components •Protects two unidirectional line or one bidirection line

Contextual Info: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

MARKING YB sc-59

Contextual Info: Order this data sheet by M1MA151KT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon S w itching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low

Contextual Info: SMD03 THRU SMD36 300W TVS DIODE Elektronische Bauelemente RoHS Compliant Product FEATURES A •SC59 package for surface mount appllcation •Protects 3.3V up through 36V components •Protects two unidirectional line or one bidirection line •Provides electrically is olated protection

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic