SC88 MARKING A1 Search Results

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

wa sot23

Abstract: BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

CHN222

Abstract: CH228K marking wa sot-23 SOT-23 marking a8 CHN11 chn22 CHBD2004 CHN202U sot-23 MARKING A7 CHN217
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Peak Average Reverse Rectified Voltage Current IO PRV VPK mAAV Maximum Reverse Current @ 25°C TA Maximum Forward Peak Surge Current @ 1S IFM Surge APK IR uAdc VR V 0.5(1S) 1(10mS)

TC7SZ08FU

Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Contextual Info: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type

smd dual diode code A7

Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
Contextual Info: BAV756S; BAW56 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC Package

5252 0.9V 1.5V led driver

Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT
Contextual Info: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors

Dual N-Channel mosfet sot-363

Abstract: SC-70-6 Dual dual gate mosfet MARKING QG 6 PIN NTJD4401N NTJD4401NT1 NTJD4401NT1G NTJD4401NT2 NTJD4401NT2G
Contextual Info: NTJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features •ăSmall Footprint 2 x 2 mm •ăLow Gate Charge N-Channel Device •ăESD Protected Gate •ăSame Package as SC-70 (6 Leads) •ăPb-Free Packages are Available http://onsemi.com

smd marking dt9

Abstract: STR 50115 EQUIVALENT str 50115 marking code Dt9 SC88 SOT363 plastic package Dt9 MARKING CODE PUMD9 TRANSISTOR SMD CODE PACKAGE SOT363 SMD MARKING CODE TRANSISTOR 501 STR 50115 A PC 150/sot363 marking code dt9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD9 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1999 Jan 07 1999 May 20 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD9 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BC846S NPN general purpose double transistor Product data sheet Supersedes data of 1999 May 28 1999 Sep 01 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S FEATURES • Two transistors in one package

LRC099-04BT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC099-04BT1G S-LRC099-04BT1G DESCRIPTIONS The LRC099-04BT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 6 a pair of ESD diodes that steer positive or negative ESD current

marking 4ft sot363

Abstract: BC846S 4FT SOT363 marking TR1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC846S NPN general purpose double transistor Product data sheet Supersedes data of 1999 May 28 1999 Sep 01 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S FEATURES

Contextual Info: 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes Rev. 04 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. Table 1.

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

PESD3V3L5UF

Abstract: PESD5V0L5UY Marking Code For NXP SMD DIODE MARKING CODE T4 smd marking t4 SOT363 nxp sot363 MARKING 16
Contextual Info: PESDxL5UF; PESDxL5UV; PESDxL5UY Low capacitance unidirectional fivefold ESD protection diode arrays Rev. 02 — 8 January 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional fivefold ElectroStatic Discharge ESD protection diode

UDFN6

Abstract: Analog Marking Information Marking Code m sc70-6 NLAS5113DFT2G NLAS5113MUTBG
Contextual Info: NLAS5113 1 W RON SPST Switch The NLAS5113 is an SPST switch designed for very low RON applications within portable devices. The NLAS5113 operates over a wide VCC range, 1.65 V to 4.5 V, and maintain a very low RON: 1.3 W Max @ VCC = 4.2 V. It is available in a choice of two packages: SC88

Contextual Info: UESD6V8L5A6 Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5A6 SC70-6 / SC88 / SOT363 General Description The UESD6V8L5A6 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional

Contextual Info: UESD6V85CT36 5 Line ESD Protection Diode Array UESD6V85CT36 SC70-6 / SC88 / SOT363 General Description The UESD6V85CT36 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional

Contextual Info: PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose double transistors. Table 1. Product overview Type number Package Configuration NXP JEITA

HT1 SOT363

Contextual Info: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design

smd marking AV SOT363

Abstract: 1PS66SB63 1PS66SB82 1PS88SB82
Contextual Info: 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes Rev. 03 — 24 January 2005 Product data sheet 1. Product profile 1.1 General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. Table 1:

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g