SCHOTTKY 4A 600V Search Results

Contextual Info: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT4SC60K APT4SC60SA 600V 600V 4A 4A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

CSD04060

Abstract: CSD04060A SCHOTTKY 4A 600V CSD04060B CSD04060E
Contextual Info: CSD04060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=4A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

Contextual Info: CSD04060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 4A Qc = 9 Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

C3D04060E

Abstract: CREE C3D04060
Contextual Info: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

SCHOTTKY 4A 600V

Abstract: DIODE 200A 600V schottky
Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

L4804A

Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

D04S60

Abstract: to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1
Contextual Info: SDP04S60, SDD04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

diode schottky 600v

Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
Contextual Info: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

D04S60

Abstract: smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SDP04S60 SCHOTTKY 4A 600V
Contextual Info: SDP04S60, SDD04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

PG-TO252-3-1

Contextual Info: SDP04S60, SDD04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

D04S60

Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
Contextual Info: SDP04S60, SDD04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

DSA0032037

Abstract: PG-TO252-3-1
Contextual Info: SDP04S60, SDD04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

D04S60C

Abstract: D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
Contextual Info: SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Product Summary V VRRM 600
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark Qc 13 nC
No reverse recovery IF 4

D04S60

Abstract: d04s6
Contextual Info: SDP04S60, SDD04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Product Summary V VRRM 600
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark Qc 13 nC
No reverse recovery

P-TO252

Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
Contextual Info: SDP04S60, SDD04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Product Summary
Revolutionary semiconductor V 600 VRRM material - Silicon Carbide
Switching behavior benchmark Qc 13 nC
No reverse recovery

to220 pcb footprint

Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
Contextual Info: SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

Contextual Info: SDP04S60 SDD04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF

igbt 600v 20a

Abstract: silicon carbide SHDC624122 SHDC624122P SHDC626052 SHDC626052P SHDC626112 SHDC626112P
Contextual Info: Silicon Carbide Schottky Rectifiers Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 133-0508 Silicon Carbide Schottky Rectifiers

LCC-5

Abstract: 10A Schottky bridge SHD620031 TO258 SHDC624122 SHDC624122P SHDC626052 SHDC626052P SHDC626112 SHDC626112P
Contextual Info: Silicon Carbide Schottky Rectifiers and Bridges Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 133-1010 Silicon Carbide Schottky Rectifiers

Contextual Info: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V

4A,600V

Abstract: SSR04C60CT SMD.5 silicon carbide 600V Silicon carbide Schottky
Contextual Info: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V

silicon carbide

Contextual Info: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V