SCHOTTKY DIODE 5V 6A Search Results

YG803C06

Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Contextual Info: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application

Contextual Info: 20A Integrated PowIRstage FEATURES IR3742 DESCRIPTION • Single input voltage range from 5V to 21V  Wide input voltage range from 1.0V to 21V with external VCC bias voltage  Integrated MOSFET drivers, Control FET, Synchronous FET with Schottky diode,

YG803C06

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14916AA-N •General description ■Features ELM14916AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage

Contextual Info: s /3 '.v h + - a " u y y- Schottky Barrier Diode Single Diode Surface Mount M2FM3 30V 6A >/J'§kSM D >Tjl50°C Ufi V f = 0.46 V MS Ir = 0.2 mA ID C /D C nyjK -2 ‘ “ B IS s A ° V D > lifêÉiift«* rsi fi < ti $ v> RATINGS Absolute Maximum Ratings isÊ » & ^i|rêa

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14914AA-N •General description ■Features ELM14914AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage

Contextual Info: MP8352 3V-6V Input, 6A, 600kHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP8352 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 6A continuous output

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14912AA-N •General description ■Features ELM14912AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage

MP38892

Abstract: z 40 mosfet
Contextual Info: MP38892 6A, 42V, 420KHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP38892 is a monolithic step-down switch mode converter with a built in, internal high-side power MOSFET. It achieves 6A continuous

vno2n

Abstract: st microelectronics powerso-10
Contextual Info: / = 7 SCS-THOM SON Ä T # MaB@üliOTFi@0H0 8 VN02NSP VN02NPT HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN02NSP V N02N PT V dss RDS on I out Vcc 60 V 0.4 n 6 A 26 V 60 V 0.4 Q 6 A 26 V . OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25°C . 5V LOGIC LEVEL COMPATIBLE INPUT

AO4607

Abstract: AO4607L
Contextual Info: AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A

AO4914

Contextual Info: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and

AO4916

Abstract: mpf230 85A schottky
Contextual Info: AO4916 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4916 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and

Contextual Info: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and

AO4607

Abstract: AO4607L alpha omega
Contextual Info: AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A

SONY APS 252 power supply

Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Contextual Info: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and

AO4914A

Abstract: AO4914AL
Contextual Info: AO4914A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914A uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and

Contextual Info: £ = T SG S-T H O M SO N HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V dss RD S on (OUT Vcc VN05H SP 45 V 0.18 £2 12 A 36 V • OUTPUT CURRENT (CONTINUOUS): 6A @ T c = 2 5 ° C ■ 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14902AA-N •General description ■Features ELM14902AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

Contextual Info: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and

pin configuration of 7486 IC

Abstract: AO4912L AO4912 AO4914 AO4914L
Contextual Info: Rev 6: May 2005 AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and