SCHOTTKY DIODE 8 PIN Search Results

E3p1

Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

e3p1

Abstract: NTMSD3P102R2SG MC 1200 Motor Control Board NTMSD3P102R2 NTMSD3P102R2G
Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

74F1056

Abstract: 74F1056SC M16A 8-bit schottky diode
Contextual Info: Revised August 1999 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed

Contextual Info: BAT54XY Schottky barrier quadruple diode Rev. 3 — 8 October 2012 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a very small

74F1056

Abstract: 74F1056SC C1995 M16A b50 diode
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching

74F1056

Abstract: M16A 74F1056SC
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching

Contextual Info: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO-8 Package Features • High Efficiency Components in a Single SO-8 Package • High Density Power MOSFET with Low RDS on , • • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive

Contextual Info: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass

Contextual Info: TO -2 20A B NXPS20H100C Dual power Schottky diode Rev. 2 — 8 June 2012 Product data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 TO-220AB plastic package.

BAS86

Contextual Info: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass

BAT54J115

Abstract: bat54j MARKING CODE AP
Contextual Info: BAT54J Schottky barrier single diode Rev. 01 — 8 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323F SC-90 very small and flat lead Surface-Mounted Device

Contextual Info: TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain ID (A) 55 @ VGS = 10V 65 @ VGS = 4.5V 30 4 2 SCHOTTKY PRODUCT SUMMARY

BAT54J

Contextual Info: BAT54J Schottky barrier single diode Rev. 01 — 8 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323F SC-90 very small and flat lead Surface-Mounted Device

block diagram of schottky diode

Abstract: Electronic car ignition circuit 10V Schottky Diode n-channel mosfet transistor 27BSC MOSFET with Schottky Diode
Contextual Info: Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain ID (A) 55 @ VGS = 10V 65 @ VGS = 4.5V 30 SCHOTTKY PRODUCT SUMMARY

marking code jk

Contextual Info: SO D3 23F BAT46WJ Single Schottky barrier diode Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F SC-90 Surface-Mounted

BAT46WJ

Abstract: marking code jk BAT46WJ,115 single schottky
Contextual Info: SO D3 23F BAT46WJ Single Schottky barrier diode Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F SC-90 Surface-Mounted

static characteristics of mosfet

Abstract: MOSFET dynamic parameters 5V GATE TO SOURCE VOLTAGE MOSFET mosfet with schottky body diode power mosfet 500 A POWER MOSFET Rise Time 1 ns schottky diode 100A 10A Schottky all mosfet equivalent book ut4810d-s08-r
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE „ DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE  DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:

DSA120X150LB

Contextual Info: DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 n.c. 6 D1 A1 9 5 7 8 7 4 1 3 2 8 = n/c 3 D2 2 9 1 Iso la to ted he su at rfa sin ce k 4 6 5 K2 K1 E72873 Features

Contextual Info: „ . Revised A ugust 1999 s e m ic o n d u c to r 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky b arrier diode array designed to be em ployed as term ination on the inputs to m em ory bus lines or C LO C K lines. This device is designed

Contextual Info: DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 n.c. 6 D1 A1 9 5 7 8 7 4 1 3 2 8 = n/c 3 D2 9 2 1 Iso la to ted he su at rfa sin ce k 4 6 5 K2 K1 E72873 Features

Contextual Info: DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 n.c. 6 D1 A1 9 5 7 8 7 4 1 3 2 8 = n/c 3 D2 2 9 1 Iso la to ted he su at rfa sin ce k 4 6 5 K2 K1 E72873 Features

capacitor 10uf 16v 1206

Abstract: SRC MICREL MLF MIC2290 MIC2290BML MIC2290YML LQH32CN100K11
Contextual Info: MIC2290 2mm x 2mm PWM Boost Regulator with Internal Schotty Diode General Description Features The MIC2290 is a 1.2MHz, PWM, boost-switching regulator housed in the small size 2mm × 2mm 8-pin MLF package. The MIC2290 features an internal Schottky diode

Schottky Diode 40V 6A

Abstract: CBVK741B019 F011 F63TNR F852 FDFS2P102 FDS9953A L86Z
Contextual Info: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.