SCHOTTKY DIODE DIE IR Search Results

SC043H100

Abstract: SC090H150 SC043H100S SC175h045s SC175S060A SC125H100A SC090H150A SC175H045 SC200H100S SC066S060
Contextual Info: AN-987 Utilizing SCHOTTKY Rectifier Die In Assembly by Bret Daniels Introduction Probing This application note describes the Schott ky rectifiers available from International Rectifier in die and wafer form. These epitaxial diode die feature a proprietary, high

e3p1

Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die

E3p1

Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

e3p1

Abstract: NTMSD3P102R2SG MC 1200 Motor Control Board NTMSD3P102R2 NTMSD3P102R2G
Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

sd1035

Abstract: SD10454 RS-296-E SD1030 SD1030-T3 SD1030-TB SD1040 SD1045 SD1045-T3 SD-1030TB
Contextual Info: SD1030 – SD1045 WTE POWER SEMICONDUCTORS Pb 10A SCHOTTKY BARRIER DIODE Features !" Schottky Barrier Chip !" Guard Ring Die Construction for Transient Protection !" High Current Capability !" Low Power Loss, High Efficiency !" High Surge Current Capability

Schottky diode Die IR

Contextual Info: CPD32X Schottky Diode Chip 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 w w w . c e n t r a l s e m i . c o m The CPD32X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods.

Contextual Info: CPD31X Schottky Diode Chip 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 w w w . c e n t r a l s e m i . c o m The CPD31X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods.

Contextual Info: CPD31X Schottky Diode Chip w w w. c e n t r a l s e m i . c o m The CPD31X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods. Parametrically, the device is extremely energy efficient as a result of low forward and reverse

sb240 diode

Abstract: diode sb260 diode SB2100 SB2100 RS-296-E SB220 SB230 SB240 SB250 SB260
Contextual Info: SB220 – SB2100 WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SB1100 schottky diode

Abstract: RS-296-E SB1100 SB130 SB140 SB150 SB160 SB180 DO41
Contextual Info: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SR5100 diode

Abstract: SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550
Contextual Info: SR520 – SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

diode sb5100

Abstract: SB520-SB5100 Diode SB530 RS-296-E SB5100 SB520 SB530 SB540 SB550 SB560
Contextual Info: SB520 – SB5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SR260 Diode

Abstract: Diode SR240 SR260 Diode construction sr240 diode equivalent components of diode sr2100 RS-296-E SR2100 SR220 SR230 SR240
Contextual Info: SR220 – SR2100 WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

Diode SR3100

Abstract: SR360 diode SR380 diode SR3100 SR3100 diode RS-296-E SR320 SR330 SR340 SR350
Contextual Info: SR320 – SR3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SB220S

Contextual Info: SB220S – SB2100S WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SK3150

Contextual Info: SK3150 SK3150 Surface Mount Schottky Rectifier Diode Schottky Gleichrichter für die Oberflächenmontage Version 2014-06-16 Nominal current – Nennstrom 2.2±0.3 2.1±0.2 7.9±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.15 Type

SB360 diode

Abstract: SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380
Contextual Info: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

1N5819

Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Contextual Info: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

diode SR160

Abstract: Diode SR1100 Diode SR140 RS-296-E SR1100 SR120 SR130 SR140 SR150 SR160
Contextual Info: SR120 – SR1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SK1820D2

Contextual Info: SK1820D2 . SK1845D2 SK1820D2 . SK1845D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2012-03-01 Nominal current – Nennstrom 1.2 4.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung

sk182

Contextual Info: SK1820D2 . SK1845D2 SK1820D2 . SK1845D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2011-04-07 1.2 4.5 Nominal current Nennstrom 10.25 ±0.5 ±0.2 4 Repetitive peak reverse voltage

SK1820

Abstract: SK1840D2 SK182 SK1840 40D2 sk183
Contextual Info: SK1820D2 . SK1840D2 SK1820D2 . SK1840D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2008-04-01 0.4 Nominal current Nennstrom 10.25 -0.1 4.5 ±0.2 4 Repetitive peak reverse voltage

SK1820

Abstract: 40D2 SK1840D2
Contextual Info: SK1820D2 . SK1840D2 SK1820D2 . SK1840D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2010-09-22 1.2 4.5 Nominal current Nennstrom 10.25 ±0.5 ±0.2 4 Repetitive peak reverse voltage

SK1840

Abstract: SK1840D2 SK1820
Contextual Info: SK1820D2 . SK1845D2 SK1820D2 . SK1845D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2011-05-23 Nominal current – Nennstrom 1.2 4.5 10.25 ±0.5 ±0.2 Repetitive peak reverse voltage