SCHOTTKY DIODE GAAS Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all
Contextual Info: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave

Contextual Info: TABLE OF CONTENTS INDEX. SWITCHES GaAs MMIC, PIN Diode, Schottky Diode, Relay . DIGITAL ATTENUATORS.

CHM1193

Abstract: k-band gaas schottky diode
Contextual Info: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky

SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

SAS diode

Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

MA4E2038

Abstract: handling of beam lead diodes police radar detector M541
Contextual Info: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation

DIODE DATABOOK

Abstract: NJX3505
Contextual Info: NJX3505 GaAs SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3505 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. That adopts the ceramic package, and suited for waveguide mounting.

60GHz mixer

Abstract: Schottky Barrier Diode KBM-N56 Microwave GaAs schottky Diode mixer KBM-N56-2 60Ghz harmonic mixer schottky diode circuit symbol 60GHz transistor KBM-N56-1 Microwave schottky Diode mixer
Contextual Info: Schottky Barrier Diode GaAs KBM-N56-2 DIMENSIONS (Unit : um) KBM-N56-2 is a GaAs flip chip anti-parallel pair Schottky diode designed for use as harmonic mixer element at microwave and millimeterwave frequencies. Their high cut-off frequency insures good performance

njx3560

Abstract: NJX3561
Contextual Info: NJX3560/61 SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3560/3561 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. It is adopted a very small surface-mount plastic package. NJX3560

DIODE DATABOOK

Abstract: NJX3560 NJX3561
Contextual Info: NJX3560/61 SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3560/3561 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. It is adopted a very small surface-mount plastic package. NJX3560

EL36

Abstract: ND5052-3G
Contextual Info: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST

diode hp 2835 schottky

Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship

5082-2835 diode

Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship

KBM-N56-1

Abstract: 30GHz diode 60GHz mixer 60Ghz 60GHz transistor schottky diode circuit symbol
Contextual Info: Schottky Barrier Diode GaAs KBM-N56-1 DIMENSIONS (Unit : um) KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeterwave frequencies. The flip chip configuration is suitable for pick and place insertion.

nitride

Abstract: KBM-N56-1
Contextual Info: NEW PRODUCT GaAs Flip Chip Schottky Diodes KBM-N56-1 Description This KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeter wave frequencies. The diode are fully passivated with silicon nitride for

CHM1190

Abstract: CHM1191
Contextual Info: CHM1191 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode

SMGS11

Abstract: METELICS DETECTOR DIODE A 0503 Microwave detector diodes SMSG11 J-STD-20C
Contextual Info: SMGS11 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS11 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband detector and single diode mixer. It is in single

Contextual Info: 37bflS22 GGlflMbD 375 « P L S B 5Ë GEC P L E S S E Y SEMICONDUCTORS DS3 724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The

DC1346

Contextual Info: PSM G E C P L E S S E Y DS3724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The Beam Leads are fabricated using a gold electroplating

Contextual Info: SMGS11 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS11 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband detector and single diode mixer. It is in single

330 marking diode

Contextual Info: Infineon icil'inciogiss Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • ♦ Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

1t377

Abstract: Schottky Barrier Diode
Contextual Info: 8382383 77C 0 0 2 6 2 SONY CORP/COMPONENT PRODS D T -Q l-Q H 1T377 GaAs Schottky Barrier Diode Description: The 1T377 is a low noise GaAs Schottky barrier diode designed for mixer applications up to the Ku-band. Plastic mold packaging has been adopted to reduce cost.

dual diode mixer

Abstract: Q62702-D1354
Contextual Info: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code