SCHOTTKY DIODE MARKING ED Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON SCHOTTKY DIODE UBMS10BC 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 1 2 Marking: ACS Dual Schottky Diode, in Series

SMD diode D95

Abstract: transistor smd marking BA sot-23 BAT64
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SMALL SIGNAL SCHOTTKY DIODE BAT64 SOT-23 3 Pin Configuration MARKING:- D95 1 = ANODE 2 = NC 3 = CATHODE 1 2 DESCRIPTION General Purpose Schottky Diode Featuring Very Low Turn-on Voltage And Fast Switching.

Contextual Info: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I Features • Surface mount device • Outline Drawing ■ Marking • Lo w V f • Super high speed switching - CATHODE MARKING - SYM BOL • High reliability by planer design ■ ,-V L I ED I 14 ■- MONTH

Contextual Info: EDA Schottky Diode ESD Suppressor Package SOT – 23 Schematic: 3 2 1 Marking “ EDA “ o Characteristics: ( Ta = 25 C ) Symbol VBD IL CT VESD VPV Characteristic Diode Brakdown Voltage Leakage current Capacitance Channel clamp voltage Peak ESD voltage capability

Contextual Info: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I • Features Outline Drawing Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I -CATHODE MARKING SYMBOL A - I Applications • High speed power switching

Contextual Info: EDB Schottky Diode ESD Suppressor Package SOT – 23-6 Schematic: 4 3 5 2 6 1 Marking “ EDB “ Characteristics: ( Ta = 25oC ) Symbol Characteristic VBD Diode Brakdown Voltage IL Leakage current CT Capacitance VESD Channel clamp voltage VPV Peak ESD voltage capability

diode 0.2 V 1A

Abstract: sc802
Contextual Info: SC802-09 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

Contextual Info: SC802-09 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

DIODE marking ED

Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Contextual Info: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SMALL SIGNAL SCHOTTKY DIODE BAT64 SOT-23 3 Pin Configuration MARKING:- D95 1 = ANODE 2 = NC 3 = CATHODE 1 2

marking 82T

Abstract: ifw 04 Collmer Semiconductor marking code 214 Seaf ERA84-009 Diode era84 era-84
Contextual Info: ERA84-009 1A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Marking ■ Features • Lo w V f Color code : Blue • Super high speed switching • High reliability by planer design , Voltage class ■ Applications -8 8 ro * 8 * * if Cathode mark Lot No.

Contextual Info: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SDC1000 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking SDC1000=ZS1 Mobile Telecomms, PCMIA & SCSI and DC-DC Conversion Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SCHOTTKY BARRIER DIODE BAT54WS SOD-323 PLASTIC PACKAGE Marking BAT54WS= L4 with cathode band ABSOLUTE MAXIMUM RATINGS Ratings at Ta= 25oC Ambient Temperature unless otherwise specified, For Capacitive Load, Derate Current by 20%

RA83

Abstract: ERA83-004 A4DC
Contextual Info: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f

ERA83-004

Abstract: RA83
Contextual Info: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

D2065C5

Abstract: IDW20G65C5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW20G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for

D1065C5

Abstract: IDH10G65C5 91E-9
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH10G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

D0665C5

Abstract: VR300
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the