SCHOTTKY DIODE ST Search Results
SCHOTTKY DIODE ST Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUHS15F30 |
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Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H |
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CUHS20S40 |
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Schottky Barrier Diode (SBD), 40 V, 2 A, US2H |
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CUHS10F60 |
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Schottky Barrier Diode (SBD), 60 V, 1 A, US2H |
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CUHS20S30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H |
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CUHS15F40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H |
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SCHOTTKY DIODE ST Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
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5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006 | |
diode
Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) diode SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) ultra low forward voltage schottky diode diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
c81 004
Abstract: Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004
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5V/10A) c81 004 Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004 | |
schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
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5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004 | |
diode b81
Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
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5V/10A) diode b81 b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009 | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 | |
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 | |
Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065-Y DocID026618 | |
smd schottky diode marking 72
Abstract: Schottky Diode Marking sc-70 smd diode A1 SMD CODE PACKAGE SOT323 M3D102 PHILIPS DIODE smd marking A1 smd diode E1 smd code marking LP 1PS70SB20 MAM394
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M3D102 1PS70SB20 OT323 SC-70) MAM394 SC-70 smd schottky diode marking 72 Schottky Diode Marking sc-70 smd diode A1 SMD CODE PACKAGE SOT323 M3D102 PHILIPS DIODE smd marking A1 smd diode E1 smd code marking LP 1PS70SB20 MAM394 | |
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IDW40G120C5BContextual Info: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW40G120C5B IDW40G120C5B | |
Contextual Info: Silicon Carbide Schottky Diode IDW15G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW15G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW15G120C5B | |
Contextual Info: Silicon Carbide Schottky Diode IDW20G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW20G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW20G120C5B | |
BAS270
Abstract: BP317 BAS27
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M3D154 BAS270 MAM214 OD110) 613514/01/pp8 BAS270 BP317 BAS27 | |
1PS59SB20Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection |
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M3D114 1PS59SB20 SC-59 MLC357 MSA314 SCA60 115104/00/01/pp8 1PS59SB20 | |
BAS240
Abstract: BP317
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M3D154 BAS240 MAM214 OD110) 613514/01/pp8 BAS240 BP317 | |
Contextual Info: DISCRETE SEMICONDUCTORS DAT alfpage M3D102 1PS70SB20 Schottky barrier diode Product data sheet 2001 Mar 16 NXP Semiconductors Product data sheet Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection |
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M3D102 1PS70SB20 OT323 SC-70) MAM394 613514/01/pp7 | |
D3012B5Contextual Info: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW30G120C5B D3012B5 | |
1PS59SB20
Abstract: DIODE A1 SOT346 smd code marking WV
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M3D114 1PS59SB20 SC-59 MLC357 MSA314 115104/00/01/pp7 1PS59SB20 DIODE A1 SOT346 smd code marking WV | |
smd schottky diode marking 72
Abstract: smd code marking WV 1PS70SB20
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M3D102 1PS70SB20 OT323 SC-70) MAM394 613514/01/pp7 smd schottky diode marking 72 smd code marking WV 1PS70SB20 |