SCHOTTKY DIODE WAFER Search Results

SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

SAS diode

Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

HSMS-2822

Abstract: HSMS-2802 HSMS-2852 hsms HSMS2800 HSMS-280X HSMS-2812 HSMS-2820 HSMS282X HSMS-282X
Contextual Info: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky Diode Fundamentals Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter

Contextual Info: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen-free type These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

35V-250V

Abstract: 5v Schottky barrier low leakage fast epitaxial diode 14F8 100ns-500ns
Contextual Info: E L E C T R O N I C Brief of Schottky Barrier Diode Friday, 7 August 2009 Schottky Barrier Diode Schottky Barrier Diode SBD indeed more and more extensively to putting to use on Switching-Mode Power Supply (SMPS) in stead of Fast Recovery Epitaxial Diode (FRED). Not only the highest Reverse Recovery Time (trr) but also the lowest Forward Voltage Drop (VF), both are the

top metal

Abstract: silan
Contextual Info: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: 2SB065030MLJY 2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB065030MLJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

marking code IR10 diode

Abstract: sot323 MARKING B8
Contextual Info: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen - free type These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: 2SB035040ML 2SB035040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: 2SB065030ML 2SB065030ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065030ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

SPD06S60

Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

diode schottky 600v

Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
Contextual Info: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

DIODE 200A 600V schottky

Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Contextual Info: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

50um silicon die attach

Contextual Info: 2SB065040ML 2SB065040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

600 V power Schottky silicon carbide diode

Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Contextual Info: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

SDP02S60

Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Contextual Info: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

SPD06S60

Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

CHM1193

Abstract: k-band gaas schottky diode
Contextual Info: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky

SDT05S60

Abstract: SIDC16D60SIC3 C-19200 DSA0037454
Contextual Info: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

Contextual Info: 2SB053020MTJY 2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB053020MTJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

Contextual Info: 2SB032035ML 2SB032035ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB032035ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

50um silicon die attach

Contextual Info: 2SB028040ML 2SB028040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB028040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.