SCHOTTKY TRANSISTOR SPICE Search Results

TRANSISTOR SMD MARKING CODE MV DIODE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT223 PZTM1101 Transistor Catalog
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance

Contextual Info: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

M0607

Abstract: transistor schottky model spice
Contextual Info: DMT9FK01 Reference Spice Parameter Total pages page 1 1 Device symbol 4 5 Product name: DMT9FK01 Product type: Transistor with Built-in Resistor PNP + Schottky Barrier Diode C B Tr E R1 R2 1 2 3 Parameters *$ .SUBCKT DMT9FK01 1 2 3 4 5 D1 1 5 SBD R_R1 2 IN 47k

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

transistor schottky model spice

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch

kf 203 transistor

Abstract: 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver
Contextual Info: AN1631/D Using PSPICE to Analyze Performance of Power MOSFETs in Step−Down, Switching Regulators Employing Synchronous Rectification http://onsemi.com APPLICATION NOTE Prepared by: Rick Honda and Scott Deuty INTRODUCTION This paper will describe an easy method to analyze

schottky DIODE MOTOROLA B14

Abstract: schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver
Contextual Info: MOTOROLA Order this document by AN1631/D SEMICONDUCTOR APPLICATION NOTE AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators Employing Synchronous Rectification Prepared by: Rick Honda and Scott Deuty Motorola, Inc.

transistor schottky model spice

Contextual Info: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5

schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice
Contextual Info: MfiE D E C I SEMICONDUCTOR • ECi 3QSfl7ti7 Q D O D D b S 073 * E C I S 7 ^ i - 3 FEATURES • All devices use an advanced, small geom etry process resulting in sm aller chip size, increased complexity, and higher frequency (ft 800MHz . All devices operate from 1 to 20 volts despite th eir sm aller size.

transistor M-226

Abstract: CPH6701
Contextual Info: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10

CPH5705

Abstract: transistor BF 235
Contextual Info: CPH5705 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 512.6 f IS 390.0 BF 0.994 NF VAF 13.0 IKF 1.086 10.8 f ISE 2.499 NE 5.00 BR 1.00 NR 20.8 VAR 100.9 m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value

CPH6702

Abstract: transistor BF 235
Contextual Info: CPH6702 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 166.7f IS 270.0 BF 1.01 NF 8.9 VAF 176.9 IKF 1.0 f ISE 2.35 NE 117.20 BR 1.00 NR 30.8 VAR 150 IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 0.80f

transistor schottky model spice

Abstract: SPICE thyristor model 7 segment SPICE Device Model
Contextual Info: V T ID E C IN C 3 D 11386151 O M lfllD VJ900 ANALOG MASTER CHIP FAMILY T .i/2 -2 1 USER'S G UIDE Release 2.0 CONTENTS 1. INTRO DUC TIO N 1.1 Preface. 3-5 1.2 Bipolar-CMOS Comparison. 3-5