SCR FIRING UNIJUNCTION Search Results

SCR FIRING UNIJUNCTION Result Highlights (5)

Part	Manufacturer	Description
P104	Coilcraft Inc	Silicon Controlled Rectifier,
FSASF214E2	Amphenol Communications Solutions	Mini SAS, High Speed Input Output Connector, 1X2 CAGE ASSY 0 DEG NO SCR
CR08AS-12AET14#B10	Renesas Electronics Corporation	600V - 0.8A - Thyristor Low Power Use
BCR08AS-12AT14#B10	Renesas Electronics Corporation	600V - 0.8A - Triac Low Power Use
BCR5FM-12LB#BH0	Renesas Electronics Corporation	600V - 5A - Triac Medium Power Use

SCR FIRING UNIJUNCTION Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MDA920A4 Abstract: full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b Text: SECTION 6 APPLICATIONS Edited and Updated PORTION OF WAVEFORM APPLIED TO LOAD Because they are reliable solid state switches, thyristors have many applications, especially as controls. One of the most common uses for thyristors is to control ac loads such as electric motors. This can be done either by	Original	PDF	228A6FP MR506 MDA920A4 full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b
2N2646 Abstract: 2N2646 transistor TO-220 2N2646 Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage	Original	PDF	2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646
2n4949 Abstract: 2N4948+JANTX Text: DIGITRON SEMICONDUCTORS 2N4948, 2N4949 PN UNIJUNCTION TRANSISTORS MAXIMUM RATINGS Rating RMS power dissipation 1 RMS emitter current Peak pulse emitter current (2) Symbol Value Unit PD 360 mW Ie 50 mA ie 1.0 Amp Emitter reverse voltage VB2E 30 Volts Storage temperature range	Original	PDF	2N4948, 2N4949 10PPS. MIL-PRF-19500, 2n4949 2N4948+JANTX
Untitled Abstract: No abstract text available Text: <z/Veur - Conductor Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 3980 Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits.	Original	PDF
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage	Original	PDF	2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500,
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS MU2646, MU2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(RMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage	Original	PDF	MU2646, MU2647 MIL-PRF-19500,
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS MU4891-MU4894 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE 50 mA iE 1.0 Amps Emitter reverse voltage VB2E 30 Volts Storage temperature range	Original	PDF	MU4891-MU4894 10PPS. MIL-PRF-19500,
2n2646 Abstract: 2n2647 Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage	Original	PDF	2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647
GES2646 Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of Text: G E SOLID STATE 3875081 Öl G E SOLID STATE »T\|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors	OCR Scan	PDF	2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of
scr firing circuit UJT triggering circuit Abstract: 2N1671 2N1671A GE SCR Manual General electric SCR manual Unit junction transistor UJT 2N1671B ujt transistor 2n2160 unijunction application note 2N4891 Text: CO N VEN TIO N AL UNlJlJNCTIONS General E lectric produces a very broad lin e of standard U JT’s. The TO-5 ceram ic disc bar structure device has been th e workhorse of the unijunction industry for over 10 years. M IL versions are av ailab le on the 2 N 4 8 9 -4 9 4 series.	OCR Scan	PDF	2N489-494 2N489 2N489A 2N490 2N490A 2N490EI 2N490G 2N491 2N491A 2N491B scr firing circuit UJT triggering circuit 2N1671 2N1671A GE SCR Manual General electric SCR manual Unit junction transistor UJT 2N1671B ujt transistor 2n2160 unijunction application note 2N4891
transistor 2n4871 Abstract: GET4871 2N4871 RCA 2N 2n4871 transistor 4871 RCA SCR 2n RCA Solid State Power Transistor Text: G E SOLID STATE 3875081 01 G E SOLID STATE U n iju n c tio n T r a n s is to r s a n ri S w itc h e s DET\|3a7SDñl OOlñüOH ti 01E - 18004 D T -31-2I 2N4870, 2N4871, GET4870, GET4871 Silicon Unijunction Transistors	OCR Scan	PDF	-31-2I 2N4870, 2N4871, GET4870, GET4871 T4870 92CS-42309 2N4870 transistor 2n4871 2N4871 RCA 2N 2n4871 transistor 4871 RCA SCR 2n RCA Solid State Power Transistor
2N6114 Abstract: 2N6115 2n6218 unijunction SCR firing unijunction N6115 b 514 transistor Text: Complementary Unijunction Transistor 2N6114 2N6115 2N6218-24 S E E GES6218-24 COMPLEMENTARY UNIJUNCTION The General Electric Complementary Unijunction T ran sistor is a silicon planar, monolithic integrated circuit. It has unijunction characteristics with	OCR Scan	PDF	2N6114 2N6115 2N6218-24 GES6218-24 2N6114 2N6115 2n6218 unijunction SCR firing unijunction N6115 b 514 transistor
UJT 2N2646 specification Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
UJT 2N2646 specification Abstract: 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B uni junction transistor 2N2646 thyristor scr oscillator circuit GE SCR Manual General electric SCR manual 2N4891 Text: UNIJUNCTIONS, T R IG G ER S A N D S W IT C H E S Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 2N1671-2N1671A) 2N1671B) UJT 2N2646 specification 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B uni junction transistor 2N2646 thyristor scr oscillator circuit GE SCR Manual General electric SCR manual 2N4891

2N2646 Abstract: 2N2646-47 scr firing D5J45 2N2646.47 2ampe Text: Silicon D5J45 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ratings: 2 5 °C Power Dissipation (Note 1) RMS Emitter Current Peak Emitter Current (Note 2) Emitter Reverse Voltage	OCR Scan	PDF	D5J45 2N2646-47 35Volts D5J45 2N2646 scr firing 2N2646.47 2ampe
2N2646 Abstract: D5J43 Text: Silicon D5J43 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b s o lu te m axim um ra tin g s : 2 5 ° C (Note 1) 300 m W 50 mA 2 Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘ -6 5 ° C to + 1 5 0 ‘	OCR Scan	PDF	D5J43 2N2646-47 30Volts D5J43 2N2646
2N2646-47 Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘	OCR Scan	PDF	2N2646-47 30Volts 35Volts 10/xF D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
scr firing circuit UJT triggering circuit Abstract: pulse transformer SCR firing circuits scr triggering with UJT and pulse transformer 2N4891 ujt transistor 2n2160 2N494C SCR 5162 2N491 2N491A jantx TRANSISTOR 2N491 Text: CO N VEN TIO N AL UNlJlJNCTIONS General E lectric produces a very broad lin e of standard U JT’s. The TO-5 ceram ic disc bar structure device has been th e workhorse of the unijunction industry for over 10 years. M IL versions are av ailab le on the 2 N 4 8 9 -4 9 4 series.	OCR Scan	PDF	2N489-494 2N489 2N489A 2N490 2N490A 2N490EI 2N490G 2N491 2N491A 2N491B scr firing circuit UJT triggering circuit pulse transformer SCR firing circuits scr triggering with UJT and pulse transformer 2N4891 ujt transistor 2n2160 2N494C SCR 5162 2N491A jantx TRANSISTOR 2N491
UJT 2N2646 specification Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
2N2646 Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647 Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)	OCR Scan	PDF	2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
1671B Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The\| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac teristic over a wide temperature range. A stable peak point voltage, a low peak point	OCR Scan	PDF	2N1671 2N1671-2N1671A) 2N1671B) 314737S 1671B scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
2N4948 Abstract: 2N4949 SCR 30v triggering circuit motorola eb20 22A01 motorola opto scr Unijunction EB20 MOTOROLA 2N4949 Text: MOTOROLA SC DIODES/OPTO ESE D b3b?aSS 0000=130 _ 4 T3 7~L 2 N 4 94 8 2 INI494 9 PN Unijunction Transistors Silicon PN Unijunction Transistors . . . designed for m ilitary and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast	OCR Scan	PDF	2N4948 2N4949 2N4948 N4949 2A-01 2N4949 SCR 30v triggering circuit motorola eb20 22A01 motorola opto scr Unijunction EB20 MOTOROLA 2N4949
2N2646 motorola Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264 Text: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:	OCR Scan	PDF	b3b755S 2N2646 2N2647 2N2646 motorola 2N2647 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
2N4949 Abstract: 2N4948 Text: MO TO R O L A SC DIODE S/ OPT O 2SE D b3t72-SS 0000=130 4 • _ T -3 2N4948 2N4949 PN Unijunction Transistors Silicon PN Unijunction Transistors , . . d e s ig n e d fo r m ilita ry a n d in d u s tria l u s e in p u lse , tim in g , trig g e rin g , se n sin g ,	OCR Scan	PDF	b3t72-SS 2N4948 2N4949 2N4949

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SCR FIRING UNIJUNCTION Search Results

SCR FIRING UNIJUNCTION Result Highlights (5)

SCR FIRING UNIJUNCTION Datasheets Context Search

MDA920A4

2N2646

2n4949

Untitled

Untitled

Untitled

Untitled

2n2646

GES2646

scr firing circuit UJT triggering circuit

transistor 2n4871

2N6114

UJT 2N2646 specification

UJT 2N2646 specification

2N2646

2N2646

2N2646-47

scr firing circuit UJT triggering circuit

UJT 2N2646 specification

2N2646

1671B

2N4948

2N2646 motorola

2N4949