SCT595 INFINEON Search Results

PG-SCT595

Abstract: pnp transistor 313 smd marking 52 PG-SCT595-5 PG-SCT-595-5 PG-SCT-595
Contextual Info: Low Dropout Voltage Tracking Regulator TLE 4250-2 Feature Overview • • • • • • • • • • • • • 50 mA Output Current Capability Tiny SMD-Package PG-SCT595-5 with lowest thermal resistance Low Output Tracking Tolerance Stable with Small Ceramic Output Capacitor

Contextual Info: SMBTA56M PNP Silicon AF Transistor 4
High breakdown voltage
Low collector-emitter saturation voltage 5
Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings

marking cdm

Abstract: vdr datasheet JESD22-A114 PG-SCT595-5
Contextual Info: Low Dropout Linear LED Driver TLE 4240-2/3 M Features • • • • • • • • • • • Typ. 58 mA constant output current Low dropout voltage Tiny SMD package PG-SCT595-5 Open load detection Version TLE 4240-3 M only 45 V input voltage operation range

SCT595

Abstract: SCT-595 DIN 6784 SCT595-5-1 sct595 infineon DIN6784 Package and Thermal Information 334 k
Contextual Info: Package and Thermal Information SCT595-5-1 Footprint/Dimensions 2.9 ±0.2 2.2 B 1.4 1.1 max 1.2 +0.1 -0.05 (0.3) 1 0.95 0.25 M B 2 3 GND 0.3 +0.1 -0.05 10˚max 1.6 ±0.1 0.5 0.8 4 10˚max 5 0.1 max +0.2 acc. to DIN 6784 2.6 max 1.9 2.9 A 0.95 Reflow soldering

TLE4250-2G

Abstract: TLE4250 TLE4250-2 cq 532 TLE4250 2G TLE4250-2G download HLG09053 HLG09090 JESD51-2 cq 531
Contextual Info: Data sheet, Rev. 1.0, July 2007 TLE4250-2 Low Dropout Voltage Tracking Regulator Automotive Power Low Dropout Voltage Tracking Regulator 1 TLE4250-2 Overview Features • • • • • • • • • • • • • • 50 mA Output Current Capability Tiny SMD-Package PG-SCT595-5 with lowest

P-SOT-143

Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Contextual Info: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1

4296

Abstract: AEB02312 AEP02253 AES02313 B45196P3335M209 SCT-595 vdr 10 50V epcos CAPACITOR, Ceramic SMD type CECC, 50V, 10 AG515
Contextual Info: Low-Drop Voltage Regulator TLE 4296 Features • • • • • • • • • • • •


Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance £ ± 4% Very low drop voltage Output current: 30 mA Inhibit input Low quiescent current consumption

4296

Abstract: AEB02312 AEP02253 AES02313 SCT-595 TLE4296GV50 TLE 4296G V50
Contextual Info: TLE 4296 Low-Drop Voltage Regulator Target Data Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Inhibit input Low quiescent current consumption

A940

Abstract: Q67006-A9410 SCT-595 Q67006-A9395 AEB02662 AEP02661 Q67006-A9409 SCT595 TLE4295G
Contextual Info: TLE 4295 Low-Drop Voltage Regulator Preliminary Data Sheet Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption

Q67006-A9410

Abstract: smd transistor 023 AEB02662 AEP02661 Q67006-A9395 Q67006-A9409 SCT-595
Contextual Info: TLE 4295 Low-Drop Voltage Regulator Data Sheet Features • • • • • • • • • • • •


Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance £ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption

SCT-595

Abstract: transistor b 595 AEB02189 AED02191 AED02192 AED02193 AED02194 AEP02253 AES02190 Q67006-A9304
Contextual Info: 5-V Voltage Regulator TLE 4286 G Features • 15 mA output current capability • 1 µA current consumption in standby mode • Low quiescent current consumption 60 µA in ON mode • Inhibit input • Very small SMD-Package SCT-595 • Wide operation range: 6.2 V to 42 V

N-Channel, Dual-Gate FET

Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Contextual Info: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.

SCT595

Abstract: smd transistor 312
Contextual Info: Low-Drop Voltage Regulator TLE 4295 Preliminary Data Sheet Features • • • • • • • • • • • •


Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption

AEB02186

Abstract: AED02191 AED02192 AED02193 AED02748 AEP02279 AES02187 Q67006-A9328 SCT-595
Contextual Info: 5-V Voltage Regulator TLE 4285 G Features • • • • • • • • 15 mA current capability Low quiescent current consumption: 100 µA Power fail output Very small SMD-Package SCT-595 Wide operation range: up to 45 V Wide temperature range: – 40 °C to 150 °C

SOT323 reflow

Abstract: All smd Packages sct-595 sot-23 dual infrared transistor CECC 00802 reflow profile 00802 SC-75 SCT-595 sod323 reflow
Contextual Info: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be

infineon reflow

Contextual Info: GaAs Components In fineon Notes on Processing 6 Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be

HLG05507

Abstract: reflow profile 00802
Contextual Info: GaAs Components Notes on Processing 6 Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be

ic 7912

Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,

barcode label infineon

Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
Contextual Info: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4

ist airflow

Abstract: AEB03001 AED02745 AED02908 AEP02906 SCT-595
Contextual Info: Low-Drop LED Driver TLE 4240 G Target Data Features • • • • • • • • • • • Output current tolerance ≤ ± 20% 60 mA output current Low drop voltage Suitable for use in automotive electronics Wide operation range: up to 45 V Wide temperature range: – 40 °C ≤ Tj ≤ 150 °C

142001

Abstract: BFP490 SCT595 SCT-595
Contextual Info: SIEGET
25 BFP490 NPN Silicon RF Transistor 4
For high power amplifiers 5
Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3
Transition frequency fT > 17 GHz 2
Gold metallization for high reliability 1
SIEGET  25 GHz fT - Line

TA 490

Abstract: SCT-595 490 transistor 09326
Contextual Info: SIEGET
25 BFP 490 NPN Silicon RF Transistor 4
For high power amplifiers 5
Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3
Transition frequency fT > 17 GHz 2
Gold metallization for high reliability 1
SIEGET  25 GHz fT - Line

093.266

Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Contextual Info: SIEGET
25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET
25 GHz fT - Line

label infineon barcode

Abstract: barcode label infineon E6327 SC-75
Contextual Info: Package Information Tape and Reel DIN IEC 286-3 34 5 Please consult your nearest Infineon sales offices (see list of addresses) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 345 Data Book 1 2000-09-01 Package Information