SD 621 TRANSISTOR Search Results

IRFP 620

Abstract: SD 621 transistor IRFP 306 transistor irf620 transistor irf b 620 irf 620
Contextual Info: r Z 7 SGS-THOMSON ^7# HDlgœitLlKêTOiDÊi IRF 620/FI-621/FI IRF 622/FI-623/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI VDSS 200 V 200 V IRF621 IRF621FI 150 V 150 V IRF622 IRF622FI 200 V 200 V IRF623 IRF623FI 150 V 150 V RdS oii

2SD860

Abstract: 2SD860A TS18
Contextual Info: Power Transistors 2SD860, 2SD860A 2SD860, 2SD860A Silicon NPN Triple-Diffused Planar Type Package D im ensions Power A m plifier • Feature • High c o lle c to r-b a s e v o lta g e Vcuo ■ A bsolute M axim um R atings (T c= 25 °C ) Item V a lu e Sym bol

Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b

Contextual Info: SIEMENS BUZ 334 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vos Id ^ D S on Package 1) Ordering Code BUZ 334 600 V 12 A 0.5 Q TO -218 AA C67078-S3130-A2 M axim um Ratings Param eter Continuous drain current, Tc = 26 ”C

diode sy 710

Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

VPT05155

Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

STVHD90

Contextual Info: Æ 7 SGS-THOMSON STVHD90 7 Æ „ HO g (S [iL[i(g¥®(ô)iQ(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA • • • • • • TYPE Voss R DS(on) STVHD90 50 V 0.023 fi •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4

Contextual Info: SGS-THOMSON STLT30 STLT30FI ¡[iJOT iD gi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STLT30 STLT30FI . . . . . . V dss R D S (o n 60 V 60 V 0 .0 8 n 0 .0 8 n Id 25 15 A A LOW GATE CHARGE HIGH CUR RENT CAPABILITY LOGIC LEVEL COMPATIBLE INPUT

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vbs b ^ D S o n Package Ordering Code BUZ 73 AL 200 V 5.5 A 0.6 Q TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Continuous drain current

DIODE CQ 618

Abstract: D3055 U3055L
Contextual Info: PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 3 . 7 A , R ds on =80 itiQ @ V g s =1 0V . Rds(on)=1 10m £1 @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handing capability.

2n06l35

Abstract: transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

WT250-S162

Abstract: 2SD150 WT250-N142 WT250-S142 T-25-0 250-N440 WT-250 WT-150
Contextual Info: W T ISO Type 1,S D 100 .3 0 0 m m :W T 2 5 0 -S /P /N 142 Type 2, SD 150. 500 m m :W T 2 5 0 -S /P /N 162 i— 19,2- Adjustable Scanning Distance Type 1 . 100 to 300 mm 1 ^ 150 to 500 mm 1 ^ -i1 25,: r h Characteristics: • Background suppression BGS

2N06L35

Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

O2SC

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

STVHD90

Abstract: ultra low igss pA QG3010
Contextual Info: 3ÜE D • 7 ^5^ 537 0 0 3 0 1 0 0 7 ■ r T '* 3 f >H 3 S G S-THOMSON w # S C S -T H O M S O N k 7 # [j^ D ^ © [i[L [i g T r ^ © 1 0 © S _ STVHD90 N T YPE V qss ^D S(on STVHD 90 50 V 0.023 Q CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

ld33a

Abstract: c3320 D33A STH33N20 STH33N20FI LD33 RC50 STW33N20 D-33A 7W237
Contextual Info: 7 T S T E 3 7 DO HSTHS 3G 3 « S Ü T H STH33N20/FI STW33N20 SGS-THOMSON ¡[iJ § «S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 33N20 S TH 33N20FI STW 33N20 • . . . . V d ss Ros(on Id 200 V 200 V 200 V < 0.085 Q < 0.085 £i < 0.085 n

information applikation

Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Contextual Info: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK

Contextual Info: _ • 7^237 rr7 Ä 7# ÜOMbOfiT DT3 ■ S G T H _ _ SCS-THOMSON S T K 14N 10 RÆD g^mi(gïï^ iD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK14N 10 V d ss RDS(on Id 100 V < 0 .1 4 n 14 A ■ T Y P IC A L FtDS(on) = 0 .0 9 5 £2

TM 1621 lcd

Abstract: TRANSISTOR SUBSTITUTION "TRANSISTOR SUBSTITUTION" AX1621 S05402 TPF0410 diode s0540 T 1621 MH
Contextual Info: 19-1214; Rev 0; 7/97 D igitally Adjustable LCD Bias Supplies Output voltage can be set to a desired positive or nega­ tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con­ verter 0 A C or with a potentiometer. The MAX1620/

Contextual Info: 19-1214; Rev 1; 1/98 jy\JY X A JV \ Digitally Adjustable LCD Bias Supplies The MAX1620/MAX1621 convert a 1.8V to 20V battery voltage to a positive or negative LCD backplane bias voltage. Backplane bias voltage can be automatically disabled when the d isp lay logic voltage is rem oved,

AO4619

Abstract: IF6 MOSFET
Contextual Info: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard

AO4619

Contextual Info: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. AO4619

74a diode

Abstract: AO4604A
Contextual Info: AO4604A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard