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SE0001
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Unknown
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SIGNAL FLASHER |
Original |
PDF
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349.93KB |
21 |
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SE005
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Sanken Electric
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Error Amplifier ICs |
Original |
PDF
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11.26KB |
1 |
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SE005N
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Sanken Electric
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Error Amplifier IC |
Original |
PDF
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16KB |
1 |
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SE005N
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Sanken Electric
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Error Amplifier ICs |
Original |
PDF
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11.26KB |
1 |
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SE005N-T
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Allegro MicroSystems
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IC ERROR AMPLIFIER ICS |
Original |
PDF
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11.27KB |
1 |
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SE006M0047A2S-0511
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Yageo
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Capacitor: 47UF: 6.3: 20%: 5 x 11: RDL: 2: 60: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
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SE006M0100A2S-0511
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Yageo
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Capacitor: 100UF: 6.3: 20%: 5 x 11: RDL: 2: 100: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
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SE006M0150A2S-0511
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Yageo
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Capacitor: 150UF: 6.3: 20%: 5 x 11: RDL: 2: 120: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
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SE006M0220A2S-0511
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Yageo
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Capacitor: 220UF: 6.3: 20%: 5 x 11: RDL: 2: 140: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
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SE006M0220AZS-0611
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Yageo
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Capacitor: 220UF: 6.3: 20%: 6 x 11: RDL: 2.5: 165: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
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SE006M0330A3S-0811
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Yageo
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Capacitor: 330UF: 6.3: 20%: 8 x 11: RDL: 3.5: 200: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
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SE006M0470AZS-0611
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Yageo
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Capacitor: 470UF: 6.3: 20%: 6 x 11: RDL: 2.5: 220: 1000: T/R |
Original |
PDF
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53.82KB |
3 |
VSE002N03MS-G
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VANGUARD
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30V/155A N-Channel Advanced Power MOSFET with RDS(on) of 1.4 mΩ at VGS=10V, 2.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high efficiency, fast switching, and low on-resistance. |
Original |
PDF
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VSE004N04MS
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VANGUARD
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40V/48A N-Channel Advanced Power MOSFET with RDS(on) of 4 mΩ at VGS=10V, available in PDFN3333 package, designed for high-efficiency power applications. |
Original |
PDF
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VSE008NE2LS
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VANGUARD
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25V/55A N-Channel Advanced Power MOSFET with RDS(on) of 5.8 mΩ at VGS=10V, 6.6 mΩ at VGS=4.5V, available in PDFN3333 package, suitable for 3.3V logic level control and high-efficiency switching applications. |
Original |
PDF
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VSE005N03MS
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VANGUARD
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30V/78A N-Channel Advanced Power MOSFET with 2.8 mΩ RDS(on) at VGS=10V, 4.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high pulse current capability and low gate charge for fast switching applications. |
Original |
PDF
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VSE003N04MSC-G
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VANGUARD
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40V/100A N-Channel Advanced Power MOSFET with typical RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and 100% avalanche testing capability. |
Original |
PDF
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VSE003N04MS-G
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VANGUARD
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40V/112A N-Channel Advanced Power MOSFET with low RDS(on) of 1.6 mΩ at VGS=10V, available in PDFN3333 package, designed for high efficiency power applications. |
Original |
PDF
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VSE006N03MSC-G
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VANGUARD
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30V/36A N-Channel Advanced Power MOSFET with 4.2 mΩ RDS(on) at VGS=10V, 7.3 mΩ at VGS=4.5V, 48A silicon-limited current, and 192A pulse current capability in a PDFN3333 package. |
Original |
PDF
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VSE008N03LS
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VANGUARD
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30V/42A N-Channel Advanced Power MOSFET with 10 mΩ RDS(on) at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and avalanche ruggedness. |
Original |
PDF
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